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Title: Thermally stable carbon-related centers in 6H-SiC: Photoluminescence spectra and microscopic models

Abstract

Recent ab initio calculations [Mattausch et al., Phys. Rev. B 70, 235211 (2004)] of carbon clusters in SiC reveal a possible connection between the tricarbon antisite (C{sub 3}){sub Si} and the U photoluminescence center in 6H-SiC [Evans et al., Phys. Rev. B 66, 35204 (2002)]. Yet, some of the predicted vibrational modes were not observed experimentally. We report experiments that, indeed, confirm the existence of a low-energy mode for the U center (as well as for the HT3 and HT4 centers with spectral details similar to the U center). We calculated the isotope splitting for the (C{sub 3}){sub Si}-defect and found near-perfect agreement with our data. In addition, we discuss the carbon di-interstitial (C{sub 2}){sub Hex} as a model for the Z and HT5 centers. The isotope splitting is also well reproduced, but the absolute values of the local mode energies show a discrepancy of about 10 meV.

Authors:
; ; ; ; ; ; ;  [1];  [2];  [2]
  1. Theoretische Festkoerperphysik, Universitaet Erlangen-Nuernberg, Staudtstrasse 7, D-91058 Erlangen (Germany)
  2. (United Kingdom)
Publication Date:
OSTI Identifier:
20788074
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review. B, Condensed Matter and Materials Physics; Journal Volume: 73; Journal Issue: 16; Other Information: DOI: 10.1103/PhysRevB.73.161201; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARBON; EMISSION SPECTRA; INTERSTITIALS; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; U CENTERS; Z CENTERS

Citation Formats

Mattausch, Alexander, Bockstedte, Michel, Pankratov, Oleg, Steeds, John W., Furkert, Suzanne, Hayes, Jonathan M., Sullivan, Wayne, Wright, Nick G., Department of Physics, University of Bristol, BS8 1TL Bristol, and Department of Electrical, Electronic and Computer Engineering, University of Newcastle. Thermally stable carbon-related centers in 6H-SiC: Photoluminescence spectra and microscopic models. United States: N. p., 2006. Web. doi:10.1103/PHYSREVB.73.1.
Mattausch, Alexander, Bockstedte, Michel, Pankratov, Oleg, Steeds, John W., Furkert, Suzanne, Hayes, Jonathan M., Sullivan, Wayne, Wright, Nick G., Department of Physics, University of Bristol, BS8 1TL Bristol, & Department of Electrical, Electronic and Computer Engineering, University of Newcastle. Thermally stable carbon-related centers in 6H-SiC: Photoluminescence spectra and microscopic models. United States. doi:10.1103/PHYSREVB.73.1.
Mattausch, Alexander, Bockstedte, Michel, Pankratov, Oleg, Steeds, John W., Furkert, Suzanne, Hayes, Jonathan M., Sullivan, Wayne, Wright, Nick G., Department of Physics, University of Bristol, BS8 1TL Bristol, and Department of Electrical, Electronic and Computer Engineering, University of Newcastle. Sat . "Thermally stable carbon-related centers in 6H-SiC: Photoluminescence spectra and microscopic models". United States. doi:10.1103/PHYSREVB.73.1.
@article{osti_20788074,
title = {Thermally stable carbon-related centers in 6H-SiC: Photoluminescence spectra and microscopic models},
author = {Mattausch, Alexander and Bockstedte, Michel and Pankratov, Oleg and Steeds, John W. and Furkert, Suzanne and Hayes, Jonathan M. and Sullivan, Wayne and Wright, Nick G. and Department of Physics, University of Bristol, BS8 1TL Bristol and Department of Electrical, Electronic and Computer Engineering, University of Newcastle},
abstractNote = {Recent ab initio calculations [Mattausch et al., Phys. Rev. B 70, 235211 (2004)] of carbon clusters in SiC reveal a possible connection between the tricarbon antisite (C{sub 3}){sub Si} and the U photoluminescence center in 6H-SiC [Evans et al., Phys. Rev. B 66, 35204 (2002)]. Yet, some of the predicted vibrational modes were not observed experimentally. We report experiments that, indeed, confirm the existence of a low-energy mode for the U center (as well as for the HT3 and HT4 centers with spectral details similar to the U center). We calculated the isotope splitting for the (C{sub 3}){sub Si}-defect and found near-perfect agreement with our data. In addition, we discuss the carbon di-interstitial (C{sub 2}){sub Hex} as a model for the Z and HT5 centers. The isotope splitting is also well reproduced, but the absolute values of the local mode energies show a discrepancy of about 10 meV.},
doi = {10.1103/PHYSREVB.73.1},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 16,
volume = 73,
place = {United States},
year = {Sat Apr 15 00:00:00 EDT 2006},
month = {Sat Apr 15 00:00:00 EDT 2006}
}
  • Interaction of hydrogen with Al acceptors in SiC is investigated using low-temperature photoluminescence (PL) spectroscopy. Hydrogenation is performed in hydrogen plasma using a standard inductively coupled plasma etching system. Appearance of H-related PL peaks after hydrogenation is accompanied with a significant reduction in relative intensity of Al bound exciton (Al--BE) PL. A gradual quenching of the remaining Al--BE photoluminescence is observed in hydrogenated samples under excitation with above band gap light, resulting in a complete disappearance of Al--BE PL emission. High-temperature annealing completely restores the shape of the PL spectrum to its prehydrogenation form. {copyright} 2001 American Institute of Physics.
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