Hole spin dephasing in p-type semiconductor quantum wells
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui, 230026 (China)
Hole spin dephasing time due to the D'yakonov-Perel' mechanism in p-type GaAs (100) quantum wells with well separated light-hole and heavy-hole bands is studied by constructing and numerically solving the kinetic spin Bloch equations. We include all the spin-conserving scattering such as the hole-phonon and the hole-nonmagnetic impurity as well as the hole-hole Coulomb scattering in our calculation. Different effects such as the temperature, the hole density, the impurity density and the Rashba coefficient on the spin dephasing are investigated in detail. We also show that the Coulomb scattering makes a marked contribution to the spin dephasing. The spin dephasing time can either increase or decrease with temperature, hole/impurity density or the inclusion of the Coulomb scattering depending on the relative importance of the spin-orbit coupling and the scattering. It is also shown that due to the different spin-orbit coupling strengths, many spin dephasing properties of holes are quite different from those of electrons.
- OSTI ID:
- 20788028
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 73, Issue 12; Other Information: DOI: 10.1103/PhysRevB.73.125314; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
Similar Records
Multisubband effect in spin dephasing in semiconductor quantum wells
Extended coherence length of spatially oscillating electron-spin polarization in dilute-magnetic-semiconductor quantum wells