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Title: Effect of epitaxial temperature on N-polar InN films grown by molecular beam epitaxy

Abstract

Effect of growth temperature on 2.3 {mu}m thick N-polar InN films grown on GaN template at 440-620 deg. C by plasma-assisted molecular beam epitaxy was investigated. We found different growth behaviors depending on the growth temperatures, which greatly influenced surface morphology. The surface showed dendritic morphologies at temperatures lower than 540 deg. C while step-flow-like morphologies and spiral growth were clearly observed at temperatures higher than 540 deg. C. Crystalline quality was improved with increasing growth temperature up to 540 deg. C and was almost saturated at higher temperatures. A gradual blueshift of the emission peak was observed from 13 K photoluminescence (PL) spectra with increasing growth temperature, which was due to the increased compressive strain in InN films. A Poisson ratio ({nu}=0.21{+-}0.05) for InN and a slope of PL peak energy as a function of {epsilon}{sub c} ({delta}E/{delta}{epsilon}{sub c}=18.9 eV) were obtained. Our results indicated that the epitaxial temperatures of 540-600 deg. C were best to achieve high quality InN films with a smooth surface.

Authors:
; ; ;  [1];  [2];  [2]
  1. Department of Electronics and Mechanical Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
20788018
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 99; Journal Issue: 7; Other Information: DOI: 10.1063/1.2190720; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; EV RANGE 10-100; GALLIUM NITRIDES; INDIUM NITRIDES; LAYERS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; PLASMA; POISSON RATIO; SEMICONDUCTOR MATERIALS; SPECTRAL SHIFT; STRAINS; STRESSES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; THIN FILMS

Citation Formats

Wang Xinqiang, Che, Song-Bek, Ishitani, Yoshihiro, Yoshikawa, Akihiko, Center for Frontier Electronics and Photonics, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, and and InN-Project as a CREST Program of JST, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522. Effect of epitaxial temperature on N-polar InN films grown by molecular beam epitaxy. United States: N. p., 2006. Web. doi:10.1063/1.2190720.
Wang Xinqiang, Che, Song-Bek, Ishitani, Yoshihiro, Yoshikawa, Akihiko, Center for Frontier Electronics and Photonics, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, & and InN-Project as a CREST Program of JST, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522. Effect of epitaxial temperature on N-polar InN films grown by molecular beam epitaxy. United States. doi:10.1063/1.2190720.
Wang Xinqiang, Che, Song-Bek, Ishitani, Yoshihiro, Yoshikawa, Akihiko, Center for Frontier Electronics and Photonics, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, and and InN-Project as a CREST Program of JST, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522. Sat . "Effect of epitaxial temperature on N-polar InN films grown by molecular beam epitaxy". United States. doi:10.1063/1.2190720.
@article{osti_20788018,
title = {Effect of epitaxial temperature on N-polar InN films grown by molecular beam epitaxy},
author = {Wang Xinqiang and Che, Song-Bek and Ishitani, Yoshihiro and Yoshikawa, Akihiko and Center for Frontier Electronics and Photonics, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 and and InN-Project as a CREST Program of JST, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522},
abstractNote = {Effect of growth temperature on 2.3 {mu}m thick N-polar InN films grown on GaN template at 440-620 deg. C by plasma-assisted molecular beam epitaxy was investigated. We found different growth behaviors depending on the growth temperatures, which greatly influenced surface morphology. The surface showed dendritic morphologies at temperatures lower than 540 deg. C while step-flow-like morphologies and spiral growth were clearly observed at temperatures higher than 540 deg. C. Crystalline quality was improved with increasing growth temperature up to 540 deg. C and was almost saturated at higher temperatures. A gradual blueshift of the emission peak was observed from 13 K photoluminescence (PL) spectra with increasing growth temperature, which was due to the increased compressive strain in InN films. A Poisson ratio ({nu}=0.21{+-}0.05) for InN and a slope of PL peak energy as a function of {epsilon}{sub c} ({delta}E/{delta}{epsilon}{sub c}=18.9 eV) were obtained. Our results indicated that the epitaxial temperatures of 540-600 deg. C were best to achieve high quality InN films with a smooth surface.},
doi = {10.1063/1.2190720},
journal = {Journal of Applied Physics},
number = 7,
volume = 99,
place = {United States},
year = {Sat Apr 01 00:00:00 EST 2006},
month = {Sat Apr 01 00:00:00 EST 2006}
}