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Title: Enhancement of the diffusion of oxygen and boron in silicon crystals under irradiation of infrared laser light

Abstract

Numerical and experimental analyses revealed the enhancement of diffusion of oxygen and boron by laser irradiation. We studied the effect of laser irradiation on the enhancement of diffusion of boron and oxygen including both isotopes of {sup 16}O and {sup 18}O. The study clarified that the diffusion of the impurities was enhanced by laser irradiation by about 2.5-8 times more than that in the case without laser irradiation in the temperature range from 990 to 1200 deg. C. We confirmed from temperature measurements of the samples that such enhancement was not based on temperature increase caused by laser irradiation but was based on the effect of irradiation of the laser. The effect of frequency of the laser on the diffusion was observed by changing the wavelength of the laser.

Authors:
; ; ; ;  [1];  [2];  [2]
  1. Research Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-Koen, Kasuga 816-8580 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
20788011
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 99; Journal Issue: 7; Other Information: DOI: 10.1063/1.2189022; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON; CRYSTALS; IMPURITIES; IRRADIATION; LASER RADIATION; LASERS; OXYGEN; OXYGEN 16; OXYGEN 18; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE MEASUREMENT; TEMPERATURE RANGE 1000-4000 K; WAVELENGTHS

Citation Formats

Liu Lijun, Tanahashi, Katsutoshi, Yamada-Kaneta, Hiroshi, Kangawa, Y., Kakimoto, Koichi, Fujitsu Ltd., Morinisato-Wakamiya, Atsugi 243-0197, and Research Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-Koen, Kasuga 816-8580. Enhancement of the diffusion of oxygen and boron in silicon crystals under irradiation of infrared laser light. United States: N. p., 2006. Web. doi:10.1063/1.2189022.
Liu Lijun, Tanahashi, Katsutoshi, Yamada-Kaneta, Hiroshi, Kangawa, Y., Kakimoto, Koichi, Fujitsu Ltd., Morinisato-Wakamiya, Atsugi 243-0197, & Research Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-Koen, Kasuga 816-8580. Enhancement of the diffusion of oxygen and boron in silicon crystals under irradiation of infrared laser light. United States. doi:10.1063/1.2189022.
Liu Lijun, Tanahashi, Katsutoshi, Yamada-Kaneta, Hiroshi, Kangawa, Y., Kakimoto, Koichi, Fujitsu Ltd., Morinisato-Wakamiya, Atsugi 243-0197, and Research Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-Koen, Kasuga 816-8580. Sat . "Enhancement of the diffusion of oxygen and boron in silicon crystals under irradiation of infrared laser light". United States. doi:10.1063/1.2189022.
@article{osti_20788011,
title = {Enhancement of the diffusion of oxygen and boron in silicon crystals under irradiation of infrared laser light},
author = {Liu Lijun and Tanahashi, Katsutoshi and Yamada-Kaneta, Hiroshi and Kangawa, Y. and Kakimoto, Koichi and Fujitsu Ltd., Morinisato-Wakamiya, Atsugi 243-0197 and Research Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-Koen, Kasuga 816-8580},
abstractNote = {Numerical and experimental analyses revealed the enhancement of diffusion of oxygen and boron by laser irradiation. We studied the effect of laser irradiation on the enhancement of diffusion of boron and oxygen including both isotopes of {sup 16}O and {sup 18}O. The study clarified that the diffusion of the impurities was enhanced by laser irradiation by about 2.5-8 times more than that in the case without laser irradiation in the temperature range from 990 to 1200 deg. C. We confirmed from temperature measurements of the samples that such enhancement was not based on temperature increase caused by laser irradiation but was based on the effect of irradiation of the laser. The effect of frequency of the laser on the diffusion was observed by changing the wavelength of the laser.},
doi = {10.1063/1.2189022},
journal = {Journal of Applied Physics},
number = 7,
volume = 99,
place = {United States},
year = {Sat Apr 01 00:00:00 EST 2006},
month = {Sat Apr 01 00:00:00 EST 2006}
}