Enhancement of the diffusion of oxygen and boron in silicon crystals under irradiation of infrared laser light
- Research Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-Koen, Kasuga 816-8580 (Japan)
Numerical and experimental analyses revealed the enhancement of diffusion of oxygen and boron by laser irradiation. We studied the effect of laser irradiation on the enhancement of diffusion of boron and oxygen including both isotopes of {sup 16}O and {sup 18}O. The study clarified that the diffusion of the impurities was enhanced by laser irradiation by about 2.5-8 times more than that in the case without laser irradiation in the temperature range from 990 to 1200 deg. C. We confirmed from temperature measurements of the samples that such enhancement was not based on temperature increase caused by laser irradiation but was based on the effect of irradiation of the laser. The effect of frequency of the laser on the diffusion was observed by changing the wavelength of the laser.
- OSTI ID:
- 20788011
- Journal Information:
- Journal of Applied Physics, Vol. 99, Issue 7; Other Information: DOI: 10.1063/1.2189022; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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