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Title: Nucleation of AgInSbTe films employed in phase-change media

Abstract

In phase-change technology small volumes of a chalcogenide material are switched between amorphous and crystalline states by local heating with a short laser or current pulses. AgInSbTe is an alloy frequently used in optical data storage, which could also be applied in electronic data storage. For those applications it is crucial to understand the reliability and reproducibility of the switching process. In this work the first crystallization of an AgInSbTe alloy has been studied on a microsecond time scale using a focused laser beam. The experiments show that nucleation is a process governed by statistics. A correlation between the success of a nucleation event with the probability of nucleation is established. By measuring the nucleation probability as a function of laser pulse duration, the incubation time is determined to 11 {mu}s. The results are compared to measurements of the growth velocity of this material. The analysis of the temperature dependence of the growth velocity explains why AgInSbTe shows growth-dominated recrystallization. The implications of these findings to the application of such growth-dominated materials in electronic data storage are discussed.

Authors:
;  [1]
  1. Institute of Physics (IA), RWTH Aachen University, 52056 Aachen (Germany)
Publication Date:
OSTI Identifier:
20787981
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 99; Journal Issue: 6; Other Information: DOI: 10.1063/1.2184428; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY COMPOUNDS; CRYSTAL GROWTH; CRYSTALLIZATION; INDIUM COMPOUNDS; LASERS; MEMORY DEVICES; NUCLEATION; PHASE CHANGE MATERIALS; PROBABILITY; RECRYSTALLIZATION; SEMICONDUCTOR MATERIALS; SILVER COMPOUNDS; TELLURIUM COMPOUNDS; TEMPERATURE DEPENDENCE; THIN FILMS

Citation Formats

Ziegler, Stefan, and Wuttig, Matthias. Nucleation of AgInSbTe films employed in phase-change media. United States: N. p., 2006. Web. doi:10.1063/1.2184428.
Ziegler, Stefan, & Wuttig, Matthias. Nucleation of AgInSbTe films employed in phase-change media. United States. doi:10.1063/1.2184428.
Ziegler, Stefan, and Wuttig, Matthias. Wed . "Nucleation of AgInSbTe films employed in phase-change media". United States. doi:10.1063/1.2184428.
@article{osti_20787981,
title = {Nucleation of AgInSbTe films employed in phase-change media},
author = {Ziegler, Stefan and Wuttig, Matthias},
abstractNote = {In phase-change technology small volumes of a chalcogenide material are switched between amorphous and crystalline states by local heating with a short laser or current pulses. AgInSbTe is an alloy frequently used in optical data storage, which could also be applied in electronic data storage. For those applications it is crucial to understand the reliability and reproducibility of the switching process. In this work the first crystallization of an AgInSbTe alloy has been studied on a microsecond time scale using a focused laser beam. The experiments show that nucleation is a process governed by statistics. A correlation between the success of a nucleation event with the probability of nucleation is established. By measuring the nucleation probability as a function of laser pulse duration, the incubation time is determined to 11 {mu}s. The results are compared to measurements of the growth velocity of this material. The analysis of the temperature dependence of the growth velocity explains why AgInSbTe shows growth-dominated recrystallization. The implications of these findings to the application of such growth-dominated materials in electronic data storage are discussed.},
doi = {10.1063/1.2184428},
journal = {Journal of Applied Physics},
number = 6,
volume = 99,
place = {United States},
year = {Wed Mar 15 00:00:00 EST 2006},
month = {Wed Mar 15 00:00:00 EST 2006}
}
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