skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: High concentration in-diffusion of phosphorus in Si from a spray-on source

Abstract

High concentration in-diffusion of phosphorus in both Czochralski grown and solar grade multicrystalline Si from a spray-on liquid source has been studied by secondary ion mass spectrometry and electrochemical capacitance-voltage profiling. By extraction of the concentration dependent effective diffusivity employing the Boltzmann-Matano analysis, we adapt an integrated diffusion model based on a previous work by Uematsu [J. Appl. Phys. 82, 2228 (1997)], in order to gain insight into the mechanisms governing such in-diffusions. We find that in the tail region of the profiles, diffusion is mediated by interaction with Si self-interstitials, whereas a vacancy mechanism via doubly negative vacancies dominates in the higher concentration region towards the surface, in correspondence with a previous analysis by Fair and Tsai [J. Electrochem. Soc. 124, 1107 (1977)]. Moreover, we find that both the vacancy and interstitial mechanisms can be described by an Arrhenius behavior, exhibiting apparent activation energies of 5.2{+-}0.3 and 2.1{+-}0.1 eV, respectively. The results form the basis for a simplified diffusion simulation, allowing simulation and subsequent optimization of phosphorus diffused emitters commonly employed in Si solar cells.

Authors:
; ; ;  [1];  [2]
  1. Section for Renewable Energy, Institute for Energy Technology, P.O. Box 40, NO-2027 Kjeller (Norway)
  2. (Norway)
Publication Date:
OSTI Identifier:
20787978
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 99; Journal Issue: 6; Other Information: DOI: 10.1063/1.2179197; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; CAPACITANCE; CRYSTALS; DIFFUSION; ELECTRIC POTENTIAL; EXTRACTION; INTERSTITIALS; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; PHOSPHORUS; SEMICONDUCTOR MATERIALS; SILICON; SOLAR CELLS; SPRAYS; VACANCIES

Citation Formats

Bentzen, A., Holt, A., Christensen, J.S., Svensson, B.G., and Department of Physics, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo. High concentration in-diffusion of phosphorus in Si from a spray-on source. United States: N. p., 2006. Web. doi:10.1063/1.2179197.
Bentzen, A., Holt, A., Christensen, J.S., Svensson, B.G., & Department of Physics, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo. High concentration in-diffusion of phosphorus in Si from a spray-on source. United States. doi:10.1063/1.2179197.
Bentzen, A., Holt, A., Christensen, J.S., Svensson, B.G., and Department of Physics, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo. Wed . "High concentration in-diffusion of phosphorus in Si from a spray-on source". United States. doi:10.1063/1.2179197.
@article{osti_20787978,
title = {High concentration in-diffusion of phosphorus in Si from a spray-on source},
author = {Bentzen, A. and Holt, A. and Christensen, J.S. and Svensson, B.G. and Department of Physics, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo},
abstractNote = {High concentration in-diffusion of phosphorus in both Czochralski grown and solar grade multicrystalline Si from a spray-on liquid source has been studied by secondary ion mass spectrometry and electrochemical capacitance-voltage profiling. By extraction of the concentration dependent effective diffusivity employing the Boltzmann-Matano analysis, we adapt an integrated diffusion model based on a previous work by Uematsu [J. Appl. Phys. 82, 2228 (1997)], in order to gain insight into the mechanisms governing such in-diffusions. We find that in the tail region of the profiles, diffusion is mediated by interaction with Si self-interstitials, whereas a vacancy mechanism via doubly negative vacancies dominates in the higher concentration region towards the surface, in correspondence with a previous analysis by Fair and Tsai [J. Electrochem. Soc. 124, 1107 (1977)]. Moreover, we find that both the vacancy and interstitial mechanisms can be described by an Arrhenius behavior, exhibiting apparent activation energies of 5.2{+-}0.3 and 2.1{+-}0.1 eV, respectively. The results form the basis for a simplified diffusion simulation, allowing simulation and subsequent optimization of phosphorus diffused emitters commonly employed in Si solar cells.},
doi = {10.1063/1.2179197},
journal = {Journal of Applied Physics},
number = 6,
volume = 99,
place = {United States},
year = {Wed Mar 15 00:00:00 EST 2006},
month = {Wed Mar 15 00:00:00 EST 2006}
}