Accuracy of the calculated unoccupied states in GaN phases as tested by high-resolution electron energy-loss spectroscopy

Journal Article · Wed Feb 15 00:00:00 EST 2006 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.73.0· OSTI ID:20787913

Moreno, M S; Lazar, S; Zandbergen, H W; Egerton, R F ^[1]

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1. Centro Atomico Bariloche, 8400-San Carlos de Bariloche (Argentina)

The electronic structures of cubic and hexagonal phases of GaN have been investigated by high-resolution electron energy-loss spectroscopy in a monochromated transmission electron microscope. Both the Ga-L{sub 2,3} and N K-edges were measured. The data are compared to the latest versions of two different calculation schemes: band structure and multiple-scattering calculations. We have found that both methods are capable of giving results that can be compared quantitatively to the experiment. Small discrepancies with experiment could be eliminated by future developments in the implementation of these methods.

• OSTI ID: 20787913
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 73, Issue 7; Other Information: DOI: 10.1103/PhysRevB.73.073308; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ACCURACY
ELECTRON SPECTRA
ELECTRONIC STRUCTURE
ENERGY LEVELS
ENERGY-LOSS SPECTROSCOPY
GALLIUM NITRIDES
MULTIPLE SCATTERING
RESOLUTION
SEMICONDUCTOR MATERIALS
TRANSMISSION ELECTRON MICROSCOPY