skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ultraviolet-infrared femtosecond laser-induced damage in fused silica and CaF{sub 2} crystals

Abstract

The damage in fused silica and CaF{sub 2} crystals induced by wavelength tunable femtosecond lasers is studied. The threshold fluence is observed to increase rapidly with laser wavelength {lambda} in the region of 250-800 nm, while it is nearly a constant for 800<{lambda}<2000 nm. The ultrafast electronic excitation is also studied by a pump and probe method. The reflectivity increases rapidly in the latter half of pump pulse, which supports that impact ionization plays an important role in the generation of conduction band electrons (CBEs). We study the CBEs absorption via subconduction-band (sub-CB) transition, and develop a coupled avalanche model. Our results indicate that the CBEs absorption via sub-CB transition plays an important role in the damage in dielectrics irradiated by the visible and near ultraviolet femtosecond lasers. Our theory explains well the experiments.

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ;  [1];  [2];  [2];  [2];  [3]
  1. Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan)
  2. (China)
  3. (Japan)
Publication Date:
OSTI Identifier:
20787904
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review. B, Condensed Matter and Materials Physics; Journal Volume: 73; Journal Issue: 5; Other Information: DOI: 10.1103/PhysRevB.73.054105; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; CALCIUM FLUORIDES; CRYSTALS; DIELECTRIC MATERIALS; ELECTRONS; EXCITATION; EXCITED STATES; IONIZATION; IRRADIATION; LASERS; OPTICAL PUMPING; PULSES; REFLECTIVITY; SILICA; SILICON COMPOUNDS; ULTRAVIOLET RADIATION; WAVELENGTHS

Citation Formats

Jia, T. Q., Chen, H. X., Huang, M., Zhao, F. L., Li, X. X., Xu, S. Z., Sun, H. Y., Feng, D. H., Li, C. B., Wang, X. F., Li, R. X., Xu, Z. Z., He, X. K., Kuroda, H., and State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai, State Key Laboratory of Optoelectronic Materials and Technologies, Zhongshan University, Guangzhou, 510275, State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai, and Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581. Ultraviolet-infrared femtosecond laser-induced damage in fused silica and CaF{sub 2} crystals. United States: N. p., 2006. Web. doi:10.1103/PHYSREVB.73.0.
Jia, T. Q., Chen, H. X., Huang, M., Zhao, F. L., Li, X. X., Xu, S. Z., Sun, H. Y., Feng, D. H., Li, C. B., Wang, X. F., Li, R. X., Xu, Z. Z., He, X. K., Kuroda, H., and State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai, State Key Laboratory of Optoelectronic Materials and Technologies, Zhongshan University, Guangzhou, 510275, State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai, & Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581. Ultraviolet-infrared femtosecond laser-induced damage in fused silica and CaF{sub 2} crystals. United States. doi:10.1103/PHYSREVB.73.0.
Jia, T. Q., Chen, H. X., Huang, M., Zhao, F. L., Li, X. X., Xu, S. Z., Sun, H. Y., Feng, D. H., Li, C. B., Wang, X. F., Li, R. X., Xu, Z. Z., He, X. K., Kuroda, H., and State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai, State Key Laboratory of Optoelectronic Materials and Technologies, Zhongshan University, Guangzhou, 510275, State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai, and Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581. Wed . "Ultraviolet-infrared femtosecond laser-induced damage in fused silica and CaF{sub 2} crystals". United States. doi:10.1103/PHYSREVB.73.0.
@article{osti_20787904,
title = {Ultraviolet-infrared femtosecond laser-induced damage in fused silica and CaF{sub 2} crystals},
author = {Jia, T. Q. and Chen, H. X. and Huang, M. and Zhao, F. L. and Li, X. X. and Xu, S. Z. and Sun, H. Y. and Feng, D. H. and Li, C. B. and Wang, X. F. and Li, R. X. and Xu, Z. Z. and He, X. K. and Kuroda, H. and and State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai and State Key Laboratory of Optoelectronic Materials and Technologies, Zhongshan University, Guangzhou, 510275 and State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai and Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581},
abstractNote = {The damage in fused silica and CaF{sub 2} crystals induced by wavelength tunable femtosecond lasers is studied. The threshold fluence is observed to increase rapidly with laser wavelength {lambda} in the region of 250-800 nm, while it is nearly a constant for 800<{lambda}<2000 nm. The ultrafast electronic excitation is also studied by a pump and probe method. The reflectivity increases rapidly in the latter half of pump pulse, which supports that impact ionization plays an important role in the generation of conduction band electrons (CBEs). We study the CBEs absorption via subconduction-band (sub-CB) transition, and develop a coupled avalanche model. Our results indicate that the CBEs absorption via sub-CB transition plays an important role in the damage in dielectrics irradiated by the visible and near ultraviolet femtosecond lasers. Our theory explains well the experiments.},
doi = {10.1103/PHYSREVB.73.0},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 5,
volume = 73,
place = {United States},
year = {Wed Feb 01 00:00:00 EST 2006},
month = {Wed Feb 01 00:00:00 EST 2006}
}