skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Thickness-dependent properties of FeTaN thin films deposited on flexible substrate

Abstract

The FeTaN thin films were deposited on the flexible plastic substrates by rf magnetron sputtering. Good soft magnetic properties with coercivity <10 Oe have been obtained in the films with thickness <250 nm. Relatively high values of the complex permeability and ferromagnetic resonance frequency were obtained and they can be adjusted by changing the film thickness. However, compared to the films on the rigid substrate, a decrease of the permeability level and a shift of the resonance peak in the permeability spectra have been noticed for the films on the flexible substrate. The electric properties, including sheet resistance, resistivity, and magnetoresistance for the films with various thicknesses, have also been investigated.

Authors:
; ; ; ;  [1]
  1. Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, Singapore 117542 (Singapore)
Publication Date:
OSTI Identifier:
20787884
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 99; Journal Issue: 4; Other Information: DOI: 10.1063/1.2170588; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COERCIVE FORCE; DEPOSITION; FERROMAGNETIC MATERIALS; FERROMAGNETIC RESONANCE; IRON NITRIDES; MAGNETIC SUSCEPTIBILITY; MAGNETORESISTANCE; PERMEABILITY; SPUTTERING; SUBSTRATES; TANTALUM NITRIDES; THICKNESS; THIN FILMS

Citation Formats

Liu, Z.W., Liu, Y., Yan, L., Tan, C.Y., and Ong, C.K. Thickness-dependent properties of FeTaN thin films deposited on flexible substrate. United States: N. p., 2006. Web. doi:10.1063/1.2170588.
Liu, Z.W., Liu, Y., Yan, L., Tan, C.Y., & Ong, C.K. Thickness-dependent properties of FeTaN thin films deposited on flexible substrate. United States. doi:10.1063/1.2170588.
Liu, Z.W., Liu, Y., Yan, L., Tan, C.Y., and Ong, C.K. Wed . "Thickness-dependent properties of FeTaN thin films deposited on flexible substrate". United States. doi:10.1063/1.2170588.
@article{osti_20787884,
title = {Thickness-dependent properties of FeTaN thin films deposited on flexible substrate},
author = {Liu, Z.W. and Liu, Y. and Yan, L. and Tan, C.Y. and Ong, C.K.},
abstractNote = {The FeTaN thin films were deposited on the flexible plastic substrates by rf magnetron sputtering. Good soft magnetic properties with coercivity <10 Oe have been obtained in the films with thickness <250 nm. Relatively high values of the complex permeability and ferromagnetic resonance frequency were obtained and they can be adjusted by changing the film thickness. However, compared to the films on the rigid substrate, a decrease of the permeability level and a shift of the resonance peak in the permeability spectra have been noticed for the films on the flexible substrate. The electric properties, including sheet resistance, resistivity, and magnetoresistance for the films with various thicknesses, have also been investigated.},
doi = {10.1063/1.2170588},
journal = {Journal of Applied Physics},
number = 4,
volume = 99,
place = {United States},
year = {Wed Feb 15 00:00:00 EST 2006},
month = {Wed Feb 15 00:00:00 EST 2006}
}
  • In this paper, poly (ethyl methacrylate) (PEMA) and (PEMA){sub 0.85}/(ZnO){sub 0.15} nanocomposite films for 2, 3, 4 and 5 minutes have been deposited by spray pyrolysis technique on indium tin oxide (ITO) coated substrate. The effect of thickness of the film on the morphological and optical properties of PEMA and (PEMA){sub 0.85}/(ZnO){sub 0.15} nanocomposite films are studied. The morphological and optical properties of pure PEMA and (PEMA){sub 0.85}/(ZnO){sub 0.15} nanocomposite films are compared. The field emission scanning electron microscopy (FESEM) shows that as the thickness of film increases, uniformity of films increases. It is found from UV-Visible spectra that themore » energy band gap decreases with increasing the deposition time and refractive index increases with increasing the thickness of the film. The band gap of the nanocomposites is found less than the pure polymer film and opposite trend is observed for refractive index. The optical absorption of PEMA/ZnO nanocomposite films is higher than pure PEMA film. The thickness of the nanocomposite film plays a significant role in the tunability of the optical properties.« less
  • CuIn{sub 0.8}Ga{sub 0.2}Se{sub 2} (CIGS) polycrystalline thin films have been deposited on soda lime glass substrate at different deposition time by pulsed laser deposition. The effect of thickness on structural, surface morphological, optical and electrical properties of thin films were investigated by X-ray diffractometer (XRD), field emission scanning electron microscope (FE-SEM), atomic force microscopy (AFM), UV-Vis-NIR spectrophotometer and electrical measurement unit. XRD study reveals that all deposited films are polycrystalline in nature and have tetragonal phase of CIGS. Crystallinity of CIGS films has been found to improve with increase in thickness of CIGS films as evidenced by sharp XRD peaksmore » for (112) orientation. Grain size and rms surface roughness of CIGS films have been found to be increased with increase in thickness. All the deposited CIGS films exhibit direct band gap semiconducting behaviour with ∼10{sup 6} cm{sup −1} absorption co-efficient. Optical band gap and resistivity of CIGS films have been found to decrease with increase in thickness.« less
  • This article presents a new method of investigating internal stress effects on thin film magnetic properties, in this case magnetically soft FeTaN sputtered films. The FeTaN films were deposited on a series of oxidized silicon (111) substrates prestressed to different degrees. During sputtering all the deposition conditions were kept exactly the same for all the samples. However, anisotropic stresses with different amplitudes are systematically introduced into the films when the prestressed wafers were released. In this way, FeTaN films with compressive stress varying from 80 to 608 MPa are produced. We found that the saturation magnetostriction ({lambda}{sub s}), anisotropy fieldmore » (H{sub k}), initial permeability ({mu}{sub i}) as well as easy axis orientation of FeTaN thin films are strongly affected by the induced stress anisotropy. A stress ratio concept is proposed as a measure of the degree of the stress anisotropy. Models for easy-hard axis switching induced by stress for magnetic films with positive magnetostriction are discussed. {copyright} {ital 1997 American Institute of Physics.}« less
  • Epitaxial FeTaN films ({approximately}1500 {Angstrom}) were grown as a function of nitrogen flow rate on epitaxial Cu(001) buffer layers ({approximately}2000 {Angstrom}) on Si(001) single crystal substrates to investigate the effect of Ta and nitrogen on the magnetocrystalline anisotropy and magnetostriction. Detailed structural investigation by transmission electron microscopy and x-ray diffraction showed that the FeTaN films were epitaxial with the Pitsch orientation relationship of FeTaN(110){parallel}Cu(001) and FeTaN{l_angle}111{r_angle}{parallel}Cu{l_angle}110{r_angle}, which allows four different in-plane variants to coexist in the film. It was found that the saturation magnetization did not change with nitrogen addition ({approximately}1600 emu/cc) up to 2{percent} lattice dilation. The values ofmore » K{sub 1} and {lambda}{sub 100} of Fe decreased slightly (20{percent} and 10{percent}, respectively), while {lambda}{sub 111} increased with increasing nitrogen content and eventually changed sign at {approximately}2{percent} normalized lattice dilation. These results qualitatively agree with our earlier findings on (001) oriented FeTaN epitaxial films on MgO single crystal substrates. Also, our calculated saturation magnetostriction for nanocrystalline samples agrees very well with published data on the same FeTaN composition. Based on Hoffmann{close_quote}s ripple theory the ripple constant is calculated for nanocrystalline films using the Doyle{endash}Finnegan model for the local average anisotropy and our measured single crystal constants. It was found that the effect of nitrogen on reducing the average anisotropy through the fundamental constants is not significant, and therefore the major factor in achieving a low ripple constant (i.e., soft magnetic properties) is the grain size, the number of grains across the thickness and the thin film stress. {copyright} {ital 1998 American Institute of Physics.}« less
  • Epitaxial c-axis oriented thin REBa{sub 2}Cu{sub 3}O{sub 7-{delta}} films were deposited on closely matched substrates: YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} on SrTiO{sub 3} and GdBa{sub 2}Cu{sub 3}O{sub 7-{delta}} on NdGaO{sub 3}. Kinetics of oxygen in-diffusion was studied by resistivity changes during corresponding isothermal annealing in a reduced oxygen atmosphere. The rate of oxygen uptake was found to be dependent on film thickness, abruptly increasing after some critical film thickness of about 40 nm. The increase continued over several orders of magnitude, as the film gets thicker, saturating for a film thickness of about 500 nm. Atomic Force Microscopy (AFM) clearly illustratesmore » the transition from a dislocation-free to dislocation-developed microstructure at around the critical film thickness. It is believed that these dislocations serve as easy paths for c-axis diffusion.« less