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Title: Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC

Abstract

The effects of low-temperature annealing in 8.2 MeV electron-irradiated 4H-SiC Schottky diodes were investigated. Deep-level transient spectroscopy and minority-carrier diffusion length (L{sub d}) measurements were carried out on not-irradiated samples and on irradiated samples before and after thermal treatments up to T=450 deg. C. We found that several deep levels in the upper half band gap (S1 with enthalpy E{sub T}=0.27 eV, S2 with E{sub T}=0.35 eV, S4 with E{sub T}=0.71 eV, and S5 with E{sub T}=0.96 eV) anneal out or modify at temperature values lower or equal to T=450 deg. C, whereby their progressive annealing out is accompanied by a net increase of L{sub d}, up to 50% of the value in the as-irradiated sample. We drew some conclusions regarding the microscopic nature of the defects related to the deep levels, according to their annealing behavior.

Authors:
; ; ; ; ;  [1];  [2]
  1. Dipartimento di Fisica, Universita di Bologna, Viale Berti Pichat 6/2, 40127 Bologna (Italy)
  2. (Italy)
Publication Date:
OSTI Identifier:
20787869
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 99; Journal Issue: 3; Other Information: DOI: 10.1063/1.2160708; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION LENGTH; ELECTRON BEAMS; ENTHALPY; IRRADIATION; MEV RANGE 01-10; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; TEMPERATURE RANGE 0400-1000 K

Citation Formats

Castaldini, A., Cavallini, A., Rigutti, L., Pizzini, S., Le Donne, A., Binetti, S., and Dipartimento di Scienza dei Materiali, Universita di Milano Bicocca, Via Cozzi 53, 20125 Milan. Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC. United States: N. p., 2006. Web. doi:10.1063/1.2160708.
Castaldini, A., Cavallini, A., Rigutti, L., Pizzini, S., Le Donne, A., Binetti, S., & Dipartimento di Scienza dei Materiali, Universita di Milano Bicocca, Via Cozzi 53, 20125 Milan. Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC. United States. doi:10.1063/1.2160708.
Castaldini, A., Cavallini, A., Rigutti, L., Pizzini, S., Le Donne, A., Binetti, S., and Dipartimento di Scienza dei Materiali, Universita di Milano Bicocca, Via Cozzi 53, 20125 Milan. Wed . "Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC". United States. doi:10.1063/1.2160708.
@article{osti_20787869,
title = {Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC},
author = {Castaldini, A. and Cavallini, A. and Rigutti, L. and Pizzini, S. and Le Donne, A. and Binetti, S. and Dipartimento di Scienza dei Materiali, Universita di Milano Bicocca, Via Cozzi 53, 20125 Milan},
abstractNote = {The effects of low-temperature annealing in 8.2 MeV electron-irradiated 4H-SiC Schottky diodes were investigated. Deep-level transient spectroscopy and minority-carrier diffusion length (L{sub d}) measurements were carried out on not-irradiated samples and on irradiated samples before and after thermal treatments up to T=450 deg. C. We found that several deep levels in the upper half band gap (S1 with enthalpy E{sub T}=0.27 eV, S2 with E{sub T}=0.35 eV, S4 with E{sub T}=0.71 eV, and S5 with E{sub T}=0.96 eV) anneal out or modify at temperature values lower or equal to T=450 deg. C, whereby their progressive annealing out is accompanied by a net increase of L{sub d}, up to 50% of the value in the as-irradiated sample. We drew some conclusions regarding the microscopic nature of the defects related to the deep levels, according to their annealing behavior.},
doi = {10.1063/1.2160708},
journal = {Journal of Applied Physics},
number = 3,
volume = 99,
place = {United States},
year = {Wed Feb 01 00:00:00 EST 2006},
month = {Wed Feb 01 00:00:00 EST 2006}
}