skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Defects and electrical behavior in 1 MeV Si{sup +}-ion-irradiated 4H-SiC Schottky diodes

Abstract

In this paper, the formation and evolution of defects induced by ion irradiation with 1 MeV Si{sup +} ions in Ni{sub 2}Si/4H-SiC Schottky diodes were studied and correlated with the electrical properties of the contacts. The current-voltage characteristics of the contacts monitored before and after irradiation showed an increase of the Schottky barrier height, of the series resistance, and of the leakage current with increasing irradiation fluence. The changes in the barrier height and in the series resistance values could be attributed to the dopant deactivation in the near-interface region, while the increase of the leakage current was associated with the formation of irradiation-induced defects. These defects showed an evolution with increasing irradiation fluence. Moreover, a combination of deep-level transient spectroscopy and current-voltage measurements of the diodes allowed us to demonstrate that the Z{sub 1}/Z{sub 2} center of 4H-SiC has the major influence on the increase of the diodes leakage current in the irradiated material.

Authors:
; ; ; ; ;  [1];  [2]
  1. CNR-IMM, Sezione di Catania, Stradale Primosole 50, I-95121 Catania (Italy)
  2. (Italy)
Publication Date:
OSTI Identifier:
20787785
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 99; Journal Issue: 1; Other Information: DOI: 10.1063/1.2158501; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEACTIVATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; INTERFACES; ION BEAMS; IRRADIATION; LEAKAGE CURRENT; MEV RANGE 01-10; SCHOTTKY BARRIER DIODES; SCHOTTKY DEFECTS; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; SILICON IONS

Citation Formats

Roccaforte, F., Libertino, S., Raineri, V., Ruggiero, A., Massimino, V., Calcagno, L., and Dipartimento di Fisica e Astronomia, Universita di Catania, via S. Sofia 64, I-95123 Catania. Defects and electrical behavior in 1 MeV Si{sup +}-ion-irradiated 4H-SiC Schottky diodes. United States: N. p., 2006. Web. doi:10.1063/1.2158501.
Roccaforte, F., Libertino, S., Raineri, V., Ruggiero, A., Massimino, V., Calcagno, L., & Dipartimento di Fisica e Astronomia, Universita di Catania, via S. Sofia 64, I-95123 Catania. Defects and electrical behavior in 1 MeV Si{sup +}-ion-irradiated 4H-SiC Schottky diodes. United States. doi:10.1063/1.2158501.
Roccaforte, F., Libertino, S., Raineri, V., Ruggiero, A., Massimino, V., Calcagno, L., and Dipartimento di Fisica e Astronomia, Universita di Catania, via S. Sofia 64, I-95123 Catania. Sun . "Defects and electrical behavior in 1 MeV Si{sup +}-ion-irradiated 4H-SiC Schottky diodes". United States. doi:10.1063/1.2158501.
@article{osti_20787785,
title = {Defects and electrical behavior in 1 MeV Si{sup +}-ion-irradiated 4H-SiC Schottky diodes},
author = {Roccaforte, F. and Libertino, S. and Raineri, V. and Ruggiero, A. and Massimino, V. and Calcagno, L. and Dipartimento di Fisica e Astronomia, Universita di Catania, via S. Sofia 64, I-95123 Catania},
abstractNote = {In this paper, the formation and evolution of defects induced by ion irradiation with 1 MeV Si{sup +} ions in Ni{sub 2}Si/4H-SiC Schottky diodes were studied and correlated with the electrical properties of the contacts. The current-voltage characteristics of the contacts monitored before and after irradiation showed an increase of the Schottky barrier height, of the series resistance, and of the leakage current with increasing irradiation fluence. The changes in the barrier height and in the series resistance values could be attributed to the dopant deactivation in the near-interface region, while the increase of the leakage current was associated with the formation of irradiation-induced defects. These defects showed an evolution with increasing irradiation fluence. Moreover, a combination of deep-level transient spectroscopy and current-voltage measurements of the diodes allowed us to demonstrate that the Z{sub 1}/Z{sub 2} center of 4H-SiC has the major influence on the increase of the diodes leakage current in the irradiated material.},
doi = {10.1063/1.2158501},
journal = {Journal of Applied Physics},
number = 1,
volume = 99,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2006},
month = {Sun Jan 01 00:00:00 EST 2006}
}