skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Magnesium diboride nanobridges fabricated by electron-beam lithography

Abstract

MgB{sub 2} nanobridges were fabricated by e-beam lithography and Ar-ion beam milling. Nanobridges of widths ranging from 60 nm to 1 {mu}m and 3 {mu}m in length were realized by Ar-ion beam milling using amorphous carbon as etching mask. The processing did not harm the superconducting properties appreciably. High values of the critical current density, more than 10 MA/cm{sup 2}, were measured for bridges with widths down to 60 nm. Current-voltage (I-V) characteristics showed a behavior typical of a bridge going normal, after the critical current is exceeded, and remaining normal as the current is decreased to a lower switch back value due to Joule heating. We could also observe switching behavior in some bridges indicating formation of normal hotspots in the bridges before they returned to their superconducting state. Alternative explanations may include natural grain boundaries in the film or the movement of Abrikosov vortices. The current-voltage (I-V) characteristics showing critical current densities up to 5x10{sup 7}A/cm{sup 2} indicates excellent film properties in the nanobridges.

Authors:
; ;  [1];  [2];  [3]
  1. Department of Microtechnology and Nanoscience, Quantum Device Physics Laboratory, Chalmers University of Technology, SE-412 96 Goeteborg (Sweden)
  2. (Quebec) J1K 2R1 (Canada)
  3. (Sweden)
Publication Date:
OSTI Identifier:
20787729
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 98; Journal Issue: 12; Other Information: DOI: 10.1063/1.2142095; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ARGON IONS; CARBON; CRITICAL CURRENT; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRON BEAMS; ETCHING; GRAIN BOUNDARIES; ION BEAMS; JOULE HEATING; MAGNESIUM BORIDES; MILLING; MIXED STATE; SUPERCONDUCTIVITY; SUPERCONDUCTORS; THIN FILMS; VORTICES

Citation Formats

Malisa, A., Charlebois, S., Lindstroem, T., Department of Microtechnology and Nanoscience, Quantum Device Physics Laboratory, Chalmers University of Technology, SE-412 96 Goeteborg, Sweden and Departement de Genie Electrique et de Genie Informatique, Faculte de Genie, Universite de Sherbrooke, Sherbrooke, and Department of Microtechnology and Nanoscience, Quantum Device Physics Laboratory, Chalmers University of Technology, SE-412 96 Goeteborg. Magnesium diboride nanobridges fabricated by electron-beam lithography. United States: N. p., 2005. Web. doi:10.1063/1.2142095.
Malisa, A., Charlebois, S., Lindstroem, T., Department of Microtechnology and Nanoscience, Quantum Device Physics Laboratory, Chalmers University of Technology, SE-412 96 Goeteborg, Sweden and Departement de Genie Electrique et de Genie Informatique, Faculte de Genie, Universite de Sherbrooke, Sherbrooke, & Department of Microtechnology and Nanoscience, Quantum Device Physics Laboratory, Chalmers University of Technology, SE-412 96 Goeteborg. Magnesium diboride nanobridges fabricated by electron-beam lithography. United States. doi:10.1063/1.2142095.
Malisa, A., Charlebois, S., Lindstroem, T., Department of Microtechnology and Nanoscience, Quantum Device Physics Laboratory, Chalmers University of Technology, SE-412 96 Goeteborg, Sweden and Departement de Genie Electrique et de Genie Informatique, Faculte de Genie, Universite de Sherbrooke, Sherbrooke, and Department of Microtechnology and Nanoscience, Quantum Device Physics Laboratory, Chalmers University of Technology, SE-412 96 Goeteborg. Thu . "Magnesium diboride nanobridges fabricated by electron-beam lithography". United States. doi:10.1063/1.2142095.
@article{osti_20787729,
title = {Magnesium diboride nanobridges fabricated by electron-beam lithography},
author = {Malisa, A. and Charlebois, S. and Lindstroem, T. and Department of Microtechnology and Nanoscience, Quantum Device Physics Laboratory, Chalmers University of Technology, SE-412 96 Goeteborg, Sweden and Departement de Genie Electrique et de Genie Informatique, Faculte de Genie, Universite de Sherbrooke, Sherbrooke and Department of Microtechnology and Nanoscience, Quantum Device Physics Laboratory, Chalmers University of Technology, SE-412 96 Goeteborg},
abstractNote = {MgB{sub 2} nanobridges were fabricated by e-beam lithography and Ar-ion beam milling. Nanobridges of widths ranging from 60 nm to 1 {mu}m and 3 {mu}m in length were realized by Ar-ion beam milling using amorphous carbon as etching mask. The processing did not harm the superconducting properties appreciably. High values of the critical current density, more than 10 MA/cm{sup 2}, were measured for bridges with widths down to 60 nm. Current-voltage (I-V) characteristics showed a behavior typical of a bridge going normal, after the critical current is exceeded, and remaining normal as the current is decreased to a lower switch back value due to Joule heating. We could also observe switching behavior in some bridges indicating formation of normal hotspots in the bridges before they returned to their superconducting state. Alternative explanations may include natural grain boundaries in the film or the movement of Abrikosov vortices. The current-voltage (I-V) characteristics showing critical current densities up to 5x10{sup 7}A/cm{sup 2} indicates excellent film properties in the nanobridges.},
doi = {10.1063/1.2142095},
journal = {Journal of Applied Physics},
number = 12,
volume = 98,
place = {United States},
year = {Thu Dec 15 00:00:00 EST 2005},
month = {Thu Dec 15 00:00:00 EST 2005}
}