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Title: Solid-state growth kinetics of Ni{sub 3}Sn{sub 4} at the Sn-3.5Ag solder/Ni interface

Abstract

Systematic experimental work was carried out to understand the growth kinetics of Ni{sub 3}Sn{sub 4} at the Sn-3.5Ag solder/Ni interface. Sn-3.5%Ag solder was reflowed over Ni metallization at 240 deg. C for 0.5 min and solid-state aging was carried out at 150-200 deg. C, for different times ranging from 0 to 400 h. Cross-sectional studies of interfaces have been conducted by scanning electron microscopy and energy dispersive x ray. The growth exponent n for Ni{sub 3}Sn{sub 4} was found to be about 0.5, which indicates that it grows by a diffusion-controlled process even at a very high temperature near to the melting point of the SnAg solder. The activation energy for the growth of Ni{sub 3}Sn{sub 4} was determined to be 16 kJ/mol.

Authors:
;  [1]
  1. Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong (China)
Publication Date:
OSTI Identifier:
20787727
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 98; Journal Issue: 12; Other Information: DOI: 10.1063/1.2149487; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; AGING; CHEMICAL ANALYSIS; CRYSTAL GROWTH; INTERFACES; MELTING POINTS; NICKEL; NICKEL ALLOYS; SCANNING ELECTRON MICROSCOPY; SILVER ALLOYS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; TIN ALLOYS

Citation Formats

Alam, M.O., and Chan, Y.C. Solid-state growth kinetics of Ni{sub 3}Sn{sub 4} at the Sn-3.5Ag solder/Ni interface. United States: N. p., 2005. Web. doi:10.1063/1.2149487.
Alam, M.O., & Chan, Y.C. Solid-state growth kinetics of Ni{sub 3}Sn{sub 4} at the Sn-3.5Ag solder/Ni interface. United States. doi:10.1063/1.2149487.
Alam, M.O., and Chan, Y.C. Thu . "Solid-state growth kinetics of Ni{sub 3}Sn{sub 4} at the Sn-3.5Ag solder/Ni interface". United States. doi:10.1063/1.2149487.
@article{osti_20787727,
title = {Solid-state growth kinetics of Ni{sub 3}Sn{sub 4} at the Sn-3.5Ag solder/Ni interface},
author = {Alam, M.O. and Chan, Y.C.},
abstractNote = {Systematic experimental work was carried out to understand the growth kinetics of Ni{sub 3}Sn{sub 4} at the Sn-3.5Ag solder/Ni interface. Sn-3.5%Ag solder was reflowed over Ni metallization at 240 deg. C for 0.5 min and solid-state aging was carried out at 150-200 deg. C, for different times ranging from 0 to 400 h. Cross-sectional studies of interfaces have been conducted by scanning electron microscopy and energy dispersive x ray. The growth exponent n for Ni{sub 3}Sn{sub 4} was found to be about 0.5, which indicates that it grows by a diffusion-controlled process even at a very high temperature near to the melting point of the SnAg solder. The activation energy for the growth of Ni{sub 3}Sn{sub 4} was determined to be 16 kJ/mol.},
doi = {10.1063/1.2149487},
journal = {Journal of Applied Physics},
number = 12,
volume = 98,
place = {United States},
year = {Thu Dec 15 00:00:00 EST 2005},
month = {Thu Dec 15 00:00:00 EST 2005}
}