Influence of interfaces on the storage of ion-implanted He in multilayered metallic composites

Journal Article · Thu Dec 15 00:00:00 EST 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2149168· OSTI ID:20787724

Hoechbauer, T; Misra, A; Hattar, K; Hoagland, R G ^[1]

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1. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

We studied ion beam mixing and He accumulation in Cu/Nb multilayer thin films after 33 keV He implantation at room temperature to a dose of 1.5x10{sup 17} atoms/cm{sup 2}. Multilayered thin films consisting of alternating Cu and Nb layers were produced by magnetron sputtering. Two types of samples, one with an individual layer thickness of 4 nm and another with 40 nm were examined. The Cu/Nb samples were analyzed in the as-deposited state, after He ion implantation, as well as after post-implantation annealing. The ion beam mixing of the interface structure was monitored by Rutherford backscattering spectrometry and cross-section transmission electron microscopy imaging. Elastic recoil detection analysis was performed to examine the helium concentration depth distribution. Scanning electron microscopy was employed to investigate He blister formation upon annealing. A comparison of the results deduced from the methods listed above reveals a very high morphological stability of the nanolayered structure. The nanolayered structure of the Cu/Nb multilayer thin films is retained. He bubbles were observed to reside within the layers but more so at the Cu/Nb incoherent interfaces.

• OSTI ID: 20787724
• Journal Information: Journal of Applied Physics, Vol. 98, Issue 12; Other Information: DOI: 10.1063/1.2149168; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
BUBBLES
COPPER
CROSS SECTIONS
DEPOSITION
HELIUM
HELIUM IONS
INTERFACES
ION BEAMS
ION IMPLANTATION
KEV RANGE 10-100
LAYERS
NIOBIUM
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
SPATIAL DISTRIBUTION
SPUTTERING
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY