Relationship between the physical and structural properties of Nb{sub z}Si{sub y}N{sub x} thin films deposited by dc reactive magnetron sputtering

Journal Article · Thu Dec 15 00:00:00 EST 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2149488· OSTI ID:20787720

Sanjines, R; Benkahoul, M; Sandu, C S; Schmid, P E; Levy, F ^[1]

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1. Ecole Polytechnique Federale de Lausanne (EPFL), Institut de Physique de la Matiere Complexe, CH-1015 Lausanne (Switzerland)

The optical and electrical properties of Nb{sub z}Si{sub y}N{sub x} thin films deposited by dc reactive magnetron sputtering have been investigated as a function of the Si content (C{sub Si}). Optical properties were studied by both specular reflectivity and spectroscopic ellipsometry. Electrical resistivity was measured by the van der Pauw method at room temperature and as a function of the temperature down to 10 K. Both the optical and electrical properties of Nb{sub z}Si{sub y}N{sub x} films are closely related with the chemical composition and microstructure evolution caused by Si addition. For C{sub Si} up to 4 at. % the Si atoms are soluble in the lattice of the NbN crystallites. In this compositional regime, the optical and electrical properties show little dependence on the Si content. Between 4 and 7 at. % the surplus of Si atoms segregates at the grain boundaries, builds an insulating SiN{sub x} layer, and originates important modifications in the optical and electrical properties of these films. Further increase of C{sub Si} leads to the formation of nanocomposite structures. The electrical properties of these films are well described by the grain-boundary scattering model with low probability for electrons to cross the grain boundary. The appearance of the intragranular-insulating SiN{sub x} layer and the reduction of the grain size are noticed in the dielectric function mainly as a strong damping of the plasma oscillation.

• OSTI ID: 20787720
• Journal Information: Journal of Applied Physics, Vol. 98, Issue 12; Other Information: DOI: 10.1063/1.2149488; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL COMPOSITION
COMPOSITE MATERIALS
DEPOSITION
DIELECTRIC MATERIALS
ELECTRIC CONDUCTIVITY
ELLIPSOMETRY
GRAIN BOUNDARIES
GRAIN SIZE
LAYERS
NANOSTRUCTURES
NIOBIUM NITRIDES
PROBABILITY
REFLECTIVITY
SCATTERING
SEGREGATION
SILICON COMPOUNDS
SPUTTERING
SUPERCONDUCTORS
TEMPERATURE RANGE 0273-0400 K
THIN FILMS