Ultrafast third-harmonic generation from textured aluminum nitride-sapphire interfaces
- Department of Physics, The University of Texas at Austin, 1 University Station C1600, Austin, Texas 78712-0264 (United States)
- Electrical and Computer Engineering, University of Texas at Austin, 1 University Station C0803, Austin, Texas 78712-0240 (United States)
- Mechanical Engineering Department, University of Texas at Austin, 1 University Station C2200, Austin, Texas 78712-0292 (United States)
We measured and modeled third-harmonic generation (THG) from an AlN thin film on sapphire using a time-domain approach appropriate for ultrafast lasers. Second-harmonic measurements indicated that polycrystalline AlN contains long-range crystal texture. An interface model for third-harmonic generation enabled an analytical representation of scanning THG (z-scan) experiments. Using it and accounting for Fresnel reflections, we measured the AlN-sapphire susceptibility ratio and estimated the susceptibility for aluminum nitride, {chi}{sub xxxx}{sup (3)}(3{omega};{omega},{omega},{omega})=1.52{+-}0.25x10{sup -13} esu. The third-harmonic (TH) spectrum strongly depended on the laser focus position and sample thickness. The amplitude and phase of the frequency-domain interference were fit to the Fourier transform of the calculated time-domain field to improve the accuracy of several experimental parameters. We verified that the model works well for explaining TH signal amplitudes and spectral phase. Some anomalous features in the TH spectrum were observed, which we attributed to nonparaxial effects.
- OSTI ID:
- 20787306
- Journal Information:
- Physical Review. A, Vol. 73, Issue 5; Other Information: DOI: 10.1103/PhysRevA.73.053812; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1050-2947
- Country of Publication:
- United States
- Language:
- English
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