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Title: Lasing threshold of diffusive random lasers in three dimensions

Abstract

We have numerically investigated the lasing threshold of three-dimensional diffusive random lasers composed of pointlike scatterers. The lasing threshold {gamma}{sub T} is determined by the mode with the smallest decay rate. The dependence of {gamma}{sub T} on the number of scatterers N (system size) is shown to follow the power law {gamma}{sub T}{proportional_to}N{sup -2/3}. This result, which reflects the diffusion law for the lasing threshold, is shown to apply even when the system is very close to the Anderson localization transition. We suggest that this result corroborates the scenario in which extended modes are at the origin of random lasing in the diffusive regime, as revealed by recent experiments.

Authors:
 [1];  [2]
  1. Instituto de Fisica, Universidade do Estado do Rio de Janeiro, Rua Sao Francisco Xavier 524, 20550-900 Rio de Janeiro (Brazil)
  2. Centro Brasileiro de Pesquisas Fisicas-CBPF/MCT, Rua Dr. Xavier Sigaud 150, 22290-180, Rio de Janeiro (Brazil)
Publication Date:
OSTI Identifier:
20786797
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review. A; Journal Volume: 73; Journal Issue: 1; Other Information: DOI: 10.1103/PhysRevA.73.013826; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; DECAY; DIFFUSION; ENERGY LEVELS; LASERS; MATHEMATICAL MODELS; RANDOMNESS; THREE-DIMENSIONAL CALCULATIONS

Citation Formats

Pinheiro, F. A., and Sampaio, L. C.. Lasing threshold of diffusive random lasers in three dimensions. United States: N. p., 2006. Web. doi:10.1103/PHYSREVA.73.0.
Pinheiro, F. A., & Sampaio, L. C.. Lasing threshold of diffusive random lasers in three dimensions. United States. doi:10.1103/PHYSREVA.73.0.
Pinheiro, F. A., and Sampaio, L. C.. Sun . "Lasing threshold of diffusive random lasers in three dimensions". United States. doi:10.1103/PHYSREVA.73.0.
@article{osti_20786797,
title = {Lasing threshold of diffusive random lasers in three dimensions},
author = {Pinheiro, F. A. and Sampaio, L. C.},
abstractNote = {We have numerically investigated the lasing threshold of three-dimensional diffusive random lasers composed of pointlike scatterers. The lasing threshold {gamma}{sub T} is determined by the mode with the smallest decay rate. The dependence of {gamma}{sub T} on the number of scatterers N (system size) is shown to follow the power law {gamma}{sub T}{proportional_to}N{sup -2/3}. This result, which reflects the diffusion law for the lasing threshold, is shown to apply even when the system is very close to the Anderson localization transition. We suggest that this result corroborates the scenario in which extended modes are at the origin of random lasing in the diffusive regime, as revealed by recent experiments.},
doi = {10.1103/PHYSREVA.73.0},
journal = {Physical Review. A},
number = 1,
volume = 73,
place = {United States},
year = {Sun Jan 15 00:00:00 EST 2006},
month = {Sun Jan 15 00:00:00 EST 2006}
}
  • We investigate diffusive propagation of light and consequent random lasing in a medium comprising resonant spherical scatterers. A Monte-Carlo calculation based on photon propagation via three-dimensional random walks is employed to obtain the dwell-times of light in the system. We compare the inter-scatterer and intra-scatterer dwell-times for representative resonant and non-resonant wavelengths. Our results show that more efficient random lasing, with intense coherent modes, is obtained when the gain is present inside the scatterers. Further, a larger reduction in frequency fluctuations is achieved by the system with intra-scatterer gain.
  • The influence of the luminescence saturation effect on the nature of the temperature dependence of the threshold of InGaAsP/InP double heterostructural lasers (lambda = 1.3..mu..) at T> or =300 K is investigated. (AIP)
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  • Measurements of the noise fluctuations in the light intensity emitted by stripe-geometry junction lasers are used to relate the threshold for amplitude-stabilized oscillation to the behavior of the first and second derivatives of the diode's electrical characteristics. The amplitude stabilization is observed to begin at a current above the point where the second-derivative signal attains its maximum value but below the current at which the junction voltage is fully saturated. Consequently, the electrical derivatives do not, in general, sense the exact threshold current but only provides bounds on its value. (AIP)
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