Double 1s shell ionization of Si induced in collisions with 1-3-MeV protons

Journal Article · Thu Dec 15 00:00:00 EST 2005 · Physical Review. A

DOI:https://doi.org/10.1103/PHYSREVA.72.0· OSTI ID:20786303

Kavcic, M; Toekesi, K ^[1]

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1. J. Stefan Institute, P.O. Box 3000, SI-1001, Ljubljana, Slovenia and Physics Department, University of Fribourg, CH-1700 Fribourg (Switzerland)

The double 1s ionization of Si induced in collisions with protons was studied by measuring the K x-ray emission of a solid Si target ionized by the impact of 1-3-MeV protons. In order to resolve the hypersatellite contributions corresponding to the radiative decay of the double 1s vacancy state, a high-resolution crystal spectrometer was employed yielding sub-eV energy resolution. From the intensity of the measured hypersatellite lines double 1s ionization cross sections for the studied collisions were determined. Experimental values were compared with the theoretical ones obtained within the independent electron framework employing single electron ionization probabilities calculated with the semiclassical approach. This comparison suggests a sequential two step model for the double 1s ionization which was additionally confirmed by four body classical trajectory Monte Carlo calculations.

• OSTI ID: 20786303
• Journal Information: Physical Review. A, Vol. 72, Issue 6; Other Information: DOI: 10.1103/PhysRevA.72.062704; (c) 2005 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1050-2947
• Country of Publication: United States
• Language: English

Related Subjects

74 ATOMIC AND MOLECULAR PHYSICS
CATIONS
COMPARATIVE EVALUATIONS
CROSS SECTIONS
ELECTRONS
EMISSION SPECTRA
ENERGY RESOLUTION
FOUR-BODY PROBLEM
HYDROGEN IONS
ION-ATOM COLLISIONS
IONIZATION
MEV RANGE
MONTE CARLO METHOD
PROTONS
RADIATIVE DECAY
SEMICLASSICAL APPROXIMATION
SILICON
VACANCIES
X RADIATION
X-RAY SPECTRA