Epitaxial relationship of ZnO film with Si (001) substrate and its effect on growth and morphology

Journal Article · Mon Jun 19 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2216103· OSTI ID:20779421

Liu, Z W; Sun, C W; Gu, J F; Zhang, Q Y ^[1]

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1. State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024 (China)

Using reactive radio-frequency magnetron sputtering, epitaxial growth of ZnO film was observed on Si (001) substrate at different temperatures ranging from room temperature to 750 deg. C. The epitaxial relationship was determined to be ZnO(001) parallel Si(001) in the direction normal to the surface of the films with a deviated angle less than 3 deg. and ZnO[100] parallel Si[110] or ZnO[310] parallel Si[110] in the plan view. Based on (2x1) reconstruction of Si (001), a heteroepitaxial model was suggested to discuss the influence of Si (001) substrate on the growth and morphology of ZnO films at different temperatures.

• OSTI ID: 20779421
• Journal Information: Applied Physics Letters, Vol. 88, Issue 25; Other Information: DOI: 10.1063/1.2216103; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
DEPOSITION
EPITAXY
FILMS
LAYERS
MORPHOLOGY
RADIOWAVE RADIATION
SEMICONDUCTOR MATERIALS
SILICON
SPUTTERING
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
ZINC OXIDES