Patterning {approx}20 nm half-pitch lines on silicon using a self-assembled organosilicate etch mask
- IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States)
Lines of {approx}20 nm half-pitch were generated on silicon surface using a self-assembled organosilicate nanostructure. A mixture of a poly(styrene-b-ethylene oxide) (PS-b-PEO) with an organosilicate precursor that is selectively miscible with PEO was used to create lamellar phase whose orientation was controlled perpendicular to the surface by tuning the surface energy of substrates. Thermal cross-linking of the organosilicate precursor followed by thermal decomposition of the PS-b-PEO leaves a robust organosilicate line pattern of sublithographic length scales on the surface. Line patterns on silicon substrate were created by transferring this self-assembled pattern into the underlying silicon substrate using anisotropic plasma etching.
- OSTI ID:
- 20779407
- Journal Information:
- Applied Physics Letters, Vol. 88, Issue 24; Other Information: DOI: 10.1063/1.2205178; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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