Synthesis and ferroelectric properties of epitaxial BiFeO{sub 3} thin films grown by sputtering
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
We have grown epitaxial BiFeO{sub 3} thin films with smooth surfaces on (001) (101), and (111) SrTiO{sub 3} substrates using sputtering. Four-circle x-ray diffraction and cross-sectional transmission electron microscopy show that the BiFeO{sub 3} thin films have rhombohedral symmetry although small monoclinic distortions have not been ruled out. Stripe ferroelectric domains oriented perpendicular to the substrate miscut direction and free of impurity phase are observed in BiFeO{sub 3} on high miscut (4 deg.) (001) SrTiO{sub 3}, which attributes to a relatively high value of remanent polarization ({approx}71 {mu}C/cm{sup 2}). Films grown on low miscut (0.8 deg.) SrTiO{sub 3} have a small amount of impure phase {alpha}-Fe{sub 2}O{sub 3} which contributes to lower the polarization values ({approx}63 {mu}C/cm{sup 2}). The BiFeO{sub 3} films grown on (101) and (111) SrTiO{sub 3} exhibited remanent polarizations of 86 and 98 {mu}C/cm{sup 2}, respectively.
- OSTI ID:
- 20779406
- Journal Information:
- Applied Physics Letters, Vol. 88, Issue 24; Other Information: DOI: 10.1063/1.2213347; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Epitaxial integration of (0001) BiFeO{sub 3} with (0001) GaN
Fatigue and ferroelectric behavior of La and Zn comodified BiFeO{sub 3} thin films