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Title: Superior electrical properties of crystalline Er{sub 2}O{sub 3} films epitaxially grown on Si substrates

Abstract

Crystalline Er{sub 2}O{sub 3} thin films were epitaxially grown on Si (001) substrates. The dielectric constant of the film with an equivalent oxide thickness of 2.0 nm is 14.4. The leakage current density as small as 1.6x10{sup -4} A/cm{sup 2} at a reversed bias voltage of -1 V has been measured. Atomically sharp Er{sub 2}O{sub 3}/Si interface, superior electrical properties, and good time stability of the Er{sub 2}O{sub 3} thin film indicate that crystalline Er{sub 2}O{sub 3} thin film can be an ideal candidate of future electronic devices.

Authors:
; ; ; ; ; ; ; ;  [1];  [2]
  1. Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433 (China)
  2. (Australia) and Centre for Microscopy and Microanalysis, University of Queensland, St. Lucia, Brisbane 4072 (Australia)
Publication Date:
OSTI Identifier:
20779356
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 22; Other Information: DOI: 10.1063/1.2208958; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRONIC EQUIPMENT; ERBIUM OXIDES; LEAKAGE CURRENT; MOLECULAR BEAM EPITAXY; PERMITTIVITY; SEMICONDUCTOR MATERIALS; STABILITY; SUBSTRATES; THICKNESS; THIN FILMS

Citation Formats

Chen, S., Zhu, Y.Y., Xu, R., Wu, Y.Q., Yang, X.J., Fan, Y.L., Lu, F., Jiang, Z.M., Zou, J., and School of Engineering, University of Queensland, St. Lucia, Brisbane 4072. Superior electrical properties of crystalline Er{sub 2}O{sub 3} films epitaxially grown on Si substrates. United States: N. p., 2006. Web. doi:10.1063/1.2208958.
Chen, S., Zhu, Y.Y., Xu, R., Wu, Y.Q., Yang, X.J., Fan, Y.L., Lu, F., Jiang, Z.M., Zou, J., & School of Engineering, University of Queensland, St. Lucia, Brisbane 4072. Superior electrical properties of crystalline Er{sub 2}O{sub 3} films epitaxially grown on Si substrates. United States. doi:10.1063/1.2208958.
Chen, S., Zhu, Y.Y., Xu, R., Wu, Y.Q., Yang, X.J., Fan, Y.L., Lu, F., Jiang, Z.M., Zou, J., and School of Engineering, University of Queensland, St. Lucia, Brisbane 4072. Mon . "Superior electrical properties of crystalline Er{sub 2}O{sub 3} films epitaxially grown on Si substrates". United States. doi:10.1063/1.2208958.
@article{osti_20779356,
title = {Superior electrical properties of crystalline Er{sub 2}O{sub 3} films epitaxially grown on Si substrates},
author = {Chen, S. and Zhu, Y.Y. and Xu, R. and Wu, Y.Q. and Yang, X.J. and Fan, Y.L. and Lu, F. and Jiang, Z.M. and Zou, J. and School of Engineering, University of Queensland, St. Lucia, Brisbane 4072},
abstractNote = {Crystalline Er{sub 2}O{sub 3} thin films were epitaxially grown on Si (001) substrates. The dielectric constant of the film with an equivalent oxide thickness of 2.0 nm is 14.4. The leakage current density as small as 1.6x10{sup -4} A/cm{sup 2} at a reversed bias voltage of -1 V has been measured. Atomically sharp Er{sub 2}O{sub 3}/Si interface, superior electrical properties, and good time stability of the Er{sub 2}O{sub 3} thin film indicate that crystalline Er{sub 2}O{sub 3} thin film can be an ideal candidate of future electronic devices.},
doi = {10.1063/1.2208958},
journal = {Applied Physics Letters},
number = 22,
volume = 88,
place = {United States},
year = {Mon May 29 00:00:00 EDT 2006},
month = {Mon May 29 00:00:00 EDT 2006}
}