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Title: Role of oxygen vacancy in HfO{sub 2}/SiO{sub 2}/Si(100) interfaces

Abstract

We have investigated the interface states in HfO{sub 2}/SiO{sub 2}/Si(100) systems that were prepared by using the in situ pulsed laser deposition technique. X-ray photoelectron spectroscopy data revealed that when the HfO{sub 2} film thickness exceeds 11 A, the film composition undergoes a systematic change from Hf silicate to oxygen-deficient HfO{sub x<2}. Furthermore, we determined that the evolution of the interface states clearly depends on the oxygen condition applied during the film growth and that the oxygen vacancy is an important parameter for Hf silicate formation.

Authors:
; ; ; ; ;  [1];  [2];  [2]
  1. CSCMR and School of Physics, Seoul National University, Seoul 151-747 (Korea, Republic of)
  2. (Korea, Republic of)
Publication Date:
OSTI Identifier:
20779302
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 19; Other Information: DOI: 10.1063/1.2201050; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; CRYSTALS; DIELECTRIC MATERIALS; ENERGY BEAM DEPOSITION; HAFNIUM OXIDES; HAFNIUM SILICATES; INTERFACES; LASER RADIATION; OXYGEN; PULSED IRRADIATION; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; THICKNESS; THIN FILMS; VACANCIES; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Cho, Deok-Yong, Oh, S.-J., Chang, Y.J., Noh, T.W., Jung, Ranju, Lee, Jae-Cheol, ReCOE and School of Physics, Seoul National University, Seoul 151-747, and Samsung Advanced Institute of Technology, Suwon 440-900. Role of oxygen vacancy in HfO{sub 2}/SiO{sub 2}/Si(100) interfaces. United States: N. p., 2006. Web. doi:10.1063/1.2201050.
Cho, Deok-Yong, Oh, S.-J., Chang, Y.J., Noh, T.W., Jung, Ranju, Lee, Jae-Cheol, ReCOE and School of Physics, Seoul National University, Seoul 151-747, & Samsung Advanced Institute of Technology, Suwon 440-900. Role of oxygen vacancy in HfO{sub 2}/SiO{sub 2}/Si(100) interfaces. United States. doi:10.1063/1.2201050.
Cho, Deok-Yong, Oh, S.-J., Chang, Y.J., Noh, T.W., Jung, Ranju, Lee, Jae-Cheol, ReCOE and School of Physics, Seoul National University, Seoul 151-747, and Samsung Advanced Institute of Technology, Suwon 440-900. Mon . "Role of oxygen vacancy in HfO{sub 2}/SiO{sub 2}/Si(100) interfaces". United States. doi:10.1063/1.2201050.
@article{osti_20779302,
title = {Role of oxygen vacancy in HfO{sub 2}/SiO{sub 2}/Si(100) interfaces},
author = {Cho, Deok-Yong and Oh, S.-J. and Chang, Y.J. and Noh, T.W. and Jung, Ranju and Lee, Jae-Cheol and ReCOE and School of Physics, Seoul National University, Seoul 151-747 and Samsung Advanced Institute of Technology, Suwon 440-900},
abstractNote = {We have investigated the interface states in HfO{sub 2}/SiO{sub 2}/Si(100) systems that were prepared by using the in situ pulsed laser deposition technique. X-ray photoelectron spectroscopy data revealed that when the HfO{sub 2} film thickness exceeds 11 A, the film composition undergoes a systematic change from Hf silicate to oxygen-deficient HfO{sub x<2}. Furthermore, we determined that the evolution of the interface states clearly depends on the oxygen condition applied during the film growth and that the oxygen vacancy is an important parameter for Hf silicate formation.},
doi = {10.1063/1.2201050},
journal = {Applied Physics Letters},
number = 19,
volume = 88,
place = {United States},
year = {Mon May 08 00:00:00 EDT 2006},
month = {Mon May 08 00:00:00 EDT 2006}
}