Characteristics of CdTe/ZnTe quantum dots grown on GaAs (100) and Si (100) substrates

Journal Article · Mon May 01 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2201865· OSTI ID:20779225

Lee, H S; Park, H L; Kim, T W ^[1]

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1. Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of)

We have studied the growth of self-assembled CdTe/ZnTe quantum dots (QDs) on both GaAs (100) and Si (100) substrates. The growth of self-assembled CdTe/ZnTe QDs on substrates shows many difficulties which are not completely solved yet. In contrast, on GaAs substrates, good crystalline quality is obtained. The results of the atomic force microscopy images showed that CdTe/ZnTe QDs were formed on GaAs (100) and Si (100) substrates. The activation energy of the electrons confined in the CdTe/ZnTe QDs grown on GaAs (100) and Si (100) substrates was obtained from the temperature-dependent photoluminescence spectra.

• OSTI ID: 20779225
• Journal Information: Applied Physics Letters, Vol. 88, Issue 18; Other Information: DOI: 10.1063/1.2201865; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
ATOMIC FORCE MICROSCOPY
CADMIUM TELLURIDES
CRYSTAL GROWTH
ELECTRONS
GALLIUM ARSENIDES
IMAGES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SPECTRA
SUBSTRATES
TEMPERATURE DEPENDENCE
ZINC TELLURIDES