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Title: Impact of nitridation on open volumes in HfSiO{sub x} studied using monoenergetic positron beams

Abstract

The effects of nitridation on open volumes in thin HfSiO{sub x} films fabricated by metal-organic chemical vapor deposition were studied using monoenergetic positron beams. It was found that positrons were annihilated from the trapped state by open volumes that exist intrinsically in amorphous HfSiO{sub x} structures. In an as-deposited film, the positrons were annihilated from two different types of open volume. After plasma nitridation, the probability of positrons trapped by larger open volumes decreased, which is attributed to nitride trapped by such regions. The mean size of the open volumes increased after annealing, suggesting expansion of the open volumes due to the incorporation of nitride into the HfSiO{sub x} matrix.

Authors:
; ; ; ; ; ; ; ; ; ;  [1];  [2];  [2];  [2]
  1. Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
20779176
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 17; Other Information: DOI: 10.1063/1.2200399; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ANNIHILATION; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; EXPANSION; HAFNIUM SILICATES; NITRIDATION; NITRIDES; ORGANOMETALLIC COMPOUNDS; PHYSICAL RADIATION EFFECTS; PLASMA; POSITRON BEAMS; PROBABILITY; THIN FILMS; TRAPPING

Citation Formats

Uedono, A., Ikeuchi, K., Otsuka, T., Yamabe, K., Eguchi, K., Takayanagi, M., Ohdaira, T., Muramatsu, M., Suzuki, R., Hamid, A.S., Chikyow, T., Semiconductor Technology Academic Research Center, 17-2, Shin Yokohama 3-chome, Kohoku, Yokohama 222-0033, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, and Nanomaterials Laboratory, National Institute for Materials Science, 3-13 Sakura, Tsukuba, Ibaraki 305-0003. Impact of nitridation on open volumes in HfSiO{sub x} studied using monoenergetic positron beams. United States: N. p., 2006. Web. doi:10.1063/1.2200399.
Uedono, A., Ikeuchi, K., Otsuka, T., Yamabe, K., Eguchi, K., Takayanagi, M., Ohdaira, T., Muramatsu, M., Suzuki, R., Hamid, A.S., Chikyow, T., Semiconductor Technology Academic Research Center, 17-2, Shin Yokohama 3-chome, Kohoku, Yokohama 222-0033, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, & Nanomaterials Laboratory, National Institute for Materials Science, 3-13 Sakura, Tsukuba, Ibaraki 305-0003. Impact of nitridation on open volumes in HfSiO{sub x} studied using monoenergetic positron beams. United States. doi:10.1063/1.2200399.
Uedono, A., Ikeuchi, K., Otsuka, T., Yamabe, K., Eguchi, K., Takayanagi, M., Ohdaira, T., Muramatsu, M., Suzuki, R., Hamid, A.S., Chikyow, T., Semiconductor Technology Academic Research Center, 17-2, Shin Yokohama 3-chome, Kohoku, Yokohama 222-0033, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, and Nanomaterials Laboratory, National Institute for Materials Science, 3-13 Sakura, Tsukuba, Ibaraki 305-0003. Mon . "Impact of nitridation on open volumes in HfSiO{sub x} studied using monoenergetic positron beams". United States. doi:10.1063/1.2200399.
@article{osti_20779176,
title = {Impact of nitridation on open volumes in HfSiO{sub x} studied using monoenergetic positron beams},
author = {Uedono, A. and Ikeuchi, K. and Otsuka, T. and Yamabe, K. and Eguchi, K. and Takayanagi, M. and Ohdaira, T. and Muramatsu, M. and Suzuki, R. and Hamid, A.S. and Chikyow, T. and Semiconductor Technology Academic Research Center, 17-2, Shin Yokohama 3-chome, Kohoku, Yokohama 222-0033 and National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 and Nanomaterials Laboratory, National Institute for Materials Science, 3-13 Sakura, Tsukuba, Ibaraki 305-0003},
abstractNote = {The effects of nitridation on open volumes in thin HfSiO{sub x} films fabricated by metal-organic chemical vapor deposition were studied using monoenergetic positron beams. It was found that positrons were annihilated from the trapped state by open volumes that exist intrinsically in amorphous HfSiO{sub x} structures. In an as-deposited film, the positrons were annihilated from two different types of open volume. After plasma nitridation, the probability of positrons trapped by larger open volumes decreased, which is attributed to nitride trapped by such regions. The mean size of the open volumes increased after annealing, suggesting expansion of the open volumes due to the incorporation of nitride into the HfSiO{sub x} matrix.},
doi = {10.1063/1.2200399},
journal = {Applied Physics Letters},
number = 17,
volume = 88,
place = {United States},
year = {Mon Apr 24 00:00:00 EDT 2006},
month = {Mon Apr 24 00:00:00 EDT 2006}
}