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Title: Nucleation of pentacene thin films on silicon dioxide modified with hexamethyldisilazane

Abstract

Nucleation and growth of pentacene on silicon dioxide surfaces modified with hexamethyldisilazane, HN[Si(CH{sub 3}){sub 3}]{sub 2}, has been examined using supersonic molecular beam techniques and atomic force microscopy. Similar to growth on clean SiO{sub 2} surfaces, the rate of deposition at a fixed incident flux decreases with increasing kinetic energy of incident pentacene, indicative of trapping mediated adsorption. Unlike clean, unmodified SiO{sub 2} surfaces, however, growth on the modified surface exhibits characteristics of heterogeneous nucleation, where the maximum island density is independent of deposition rate. Further, islands in the submonolayer regime are two molecules high, unlike the one molecule high islands observed on clean SiO{sub 2}.

Authors:
;  [1]
  1. School of Chemical and Biomolecular Engineering, Cornell University, Ithaca, New York 14853 (United States)
Publication Date:
OSTI Identifier:
20779169
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 14; Other Information: DOI: 10.1063/1.2182012; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ADSORPTION; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DEPOSITION; METHYL RADICALS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NUCLEATION; ORGANIC SEMICONDUCTORS; PENTACENE; SILICON OXIDES; SURFACE PROPERTIES; SURFACE TREATMENTS; THIN FILMS

Citation Formats

Killampalli, Aravind S., and Engstrom, J.R. Nucleation of pentacene thin films on silicon dioxide modified with hexamethyldisilazane. United States: N. p., 2006. Web. doi:10.1063/1.2182012.
Killampalli, Aravind S., & Engstrom, J.R. Nucleation of pentacene thin films on silicon dioxide modified with hexamethyldisilazane. United States. doi:10.1063/1.2182012.
Killampalli, Aravind S., and Engstrom, J.R. Mon . "Nucleation of pentacene thin films on silicon dioxide modified with hexamethyldisilazane". United States. doi:10.1063/1.2182012.
@article{osti_20779169,
title = {Nucleation of pentacene thin films on silicon dioxide modified with hexamethyldisilazane},
author = {Killampalli, Aravind S. and Engstrom, J.R.},
abstractNote = {Nucleation and growth of pentacene on silicon dioxide surfaces modified with hexamethyldisilazane, HN[Si(CH{sub 3}){sub 3}]{sub 2}, has been examined using supersonic molecular beam techniques and atomic force microscopy. Similar to growth on clean SiO{sub 2} surfaces, the rate of deposition at a fixed incident flux decreases with increasing kinetic energy of incident pentacene, indicative of trapping mediated adsorption. Unlike clean, unmodified SiO{sub 2} surfaces, however, growth on the modified surface exhibits characteristics of heterogeneous nucleation, where the maximum island density is independent of deposition rate. Further, islands in the submonolayer regime are two molecules high, unlike the one molecule high islands observed on clean SiO{sub 2}.},
doi = {10.1063/1.2182012},
journal = {Applied Physics Letters},
number = 14,
volume = 88,
place = {United States},
year = {Mon Apr 03 00:00:00 EDT 2006},
month = {Mon Apr 03 00:00:00 EDT 2006}
}