Electrical properties of n-type GaPN grown by molecular-beam epitaxy

Journal Article · Mon Apr 03 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2193350· OSTI ID:20779162

Furukawa, Yuzo; Yonezu, Hiroo; Wakahara, Akihiro; Yoshizumi, Yusuke; Morita, Yoshiro; Sato, Atsushi ^[1]

---

1. Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Tempakucho, Hibarigaoka, Toyohashi, Aichi 441-8580 (Japan)

We have investigated electrical properties of n-GaPN layers grown by molecular-beam epitaxy with an rf-plasma source using sulfur and tellurium as dopants. The electron concentration in n-GaPN was about 10 times lower than that in n-GaP. Desorption of dopants from the grown surface by impinging N atoms may be one of the possible causes for the reduced electron concentration. In addition, electron mobilities in GaPN were restricted by ionized impurity scattering even at room temperature (RT). N atoms at N-related levels could trap the electrons, and these ionized N could act as a Columb scattering center for free electrons even at RT.

• OSTI ID: 20779162
• Journal Information: Applied Physics Letters, Vol. 88, Issue 14; Other Information: DOI: 10.1063/1.2193350; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
DEPOSITION
DESORPTION
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTRON DENSITY
ELECTRON MOBILITY
ELECTRONS
GALLIUM NITRIDES
GALLIUM PHOSPHIDES
IMPURITIES
LAYERS
MOLECULAR BEAM EPITAXY
PLASMA
SCATTERING
SEMICONDUCTOR MATERIALS
SULFUR
TELLURIUM
TEMPERATURE RANGE 0273-0400 K
TRAPS