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Title: Electrical properties of n-type GaPN grown by molecular-beam epitaxy

Abstract

We have investigated electrical properties of n-GaPN layers grown by molecular-beam epitaxy with an rf-plasma source using sulfur and tellurium as dopants. The electron concentration in n-GaPN was about 10 times lower than that in n-GaP. Desorption of dopants from the grown surface by impinging N atoms may be one of the possible causes for the reduced electron concentration. In addition, electron mobilities in GaPN were restricted by ionized impurity scattering even at room temperature (RT). N atoms at N-related levels could trap the electrons, and these ionized N could act as a Columb scattering center for free electrons even at RT.

Authors:
; ; ; ; ;  [1]
  1. Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Tempakucho, Hibarigaoka, Toyohashi, Aichi 441-8580 (Japan)
Publication Date:
OSTI Identifier:
20779162
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 14; Other Information: DOI: 10.1063/1.2193350; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; DEPOSITION; DESORPTION; DOPED MATERIALS; ELECTRICAL PROPERTIES; ELECTRON DENSITY; ELECTRON MOBILITY; ELECTRONS; GALLIUM NITRIDES; GALLIUM PHOSPHIDES; IMPURITIES; LAYERS; MOLECULAR BEAM EPITAXY; PLASMA; SCATTERING; SEMICONDUCTOR MATERIALS; SULFUR; TELLURIUM; TEMPERATURE RANGE 0273-0400 K; TRAPS

Citation Formats

Furukawa, Yuzo, Yonezu, Hiroo, Wakahara, Akihiro, Yoshizumi, Yusuke, Morita, Yoshiro, and Sato, Atsushi. Electrical properties of n-type GaPN grown by molecular-beam epitaxy. United States: N. p., 2006. Web. doi:10.1063/1.2193350.
Furukawa, Yuzo, Yonezu, Hiroo, Wakahara, Akihiro, Yoshizumi, Yusuke, Morita, Yoshiro, & Sato, Atsushi. Electrical properties of n-type GaPN grown by molecular-beam epitaxy. United States. doi:10.1063/1.2193350.
Furukawa, Yuzo, Yonezu, Hiroo, Wakahara, Akihiro, Yoshizumi, Yusuke, Morita, Yoshiro, and Sato, Atsushi. Mon . "Electrical properties of n-type GaPN grown by molecular-beam epitaxy". United States. doi:10.1063/1.2193350.
@article{osti_20779162,
title = {Electrical properties of n-type GaPN grown by molecular-beam epitaxy},
author = {Furukawa, Yuzo and Yonezu, Hiroo and Wakahara, Akihiro and Yoshizumi, Yusuke and Morita, Yoshiro and Sato, Atsushi},
abstractNote = {We have investigated electrical properties of n-GaPN layers grown by molecular-beam epitaxy with an rf-plasma source using sulfur and tellurium as dopants. The electron concentration in n-GaPN was about 10 times lower than that in n-GaP. Desorption of dopants from the grown surface by impinging N atoms may be one of the possible causes for the reduced electron concentration. In addition, electron mobilities in GaPN were restricted by ionized impurity scattering even at room temperature (RT). N atoms at N-related levels could trap the electrons, and these ionized N could act as a Columb scattering center for free electrons even at RT.},
doi = {10.1063/1.2193350},
journal = {Applied Physics Letters},
number = 14,
volume = 88,
place = {United States},
year = {Mon Apr 03 00:00:00 EDT 2006},
month = {Mon Apr 03 00:00:00 EDT 2006}
}