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Title: Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H{sup +} irradiation and postannealing

Abstract

Strain-relaxation process of SiGe-on-insulator (SGOI) structures in the oxidation induced Ge condensation method has been investigated as a function of the SiGe thickness. Complete relaxation was obtained for thick SGOI layers (>100 nm). However, the relaxation rates abruptly decreased with decreasing SiGe thickness below 50 nm, i.e., the relaxation rate of 30% at 30 nm SiGe thickness. In order to improve this phenomenon, a method combined with H{sup +} irradiation with a medium dose (5x10{sup 15} cm{sup -2}) and postannealing (1200 deg. C) has been developed. This successfully achieved the high relaxation rate (70%) in the ultrathin SGOI (30 nm)

Authors:
; ; ; ; ; ; ;  [1];  [2];  [2];  [2]
  1. Department of Electronics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
20779161
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 14; Other Information: DOI: 10.1063/1.2192644; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; GERMANIUM ALLOYS; GERMANIUM SILICIDES; HYDROGEN IONS 1 PLUS; ION BEAMS; IRRADIATION; LAYERS; OXIDATION; SEMICONDUCTOR MATERIALS; SILICON ALLOYS; STRAINS; STRESS RELAXATION; THICKNESS

Citation Formats

Miyao, Masanobu, Tanaka, Masanori, Tsunoda, Isao, Sadoh, Taizoh, Enokida, Toyotsugu, Hagino, Hiroyasu, Ninomiya, Masaharu, Nakamae, Masahiko, Analysis and Evaluation Center, Fukuryo Semicon Engineering Corporation, 1-1-1 Imajuku-Higashi, Fukuoka 819-0192, SUMCO Corporation, 314 Nishisangao, Noda, Chiba 278-0015, and SUMCO Corporation, 2201 Oaza Kamioda, Kohoku-cho, Kishima-gun, Saga 849-0597. Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H{sup +} irradiation and postannealing. United States: N. p., 2006. Web. doi:10.1063/1.2192644.
Miyao, Masanobu, Tanaka, Masanori, Tsunoda, Isao, Sadoh, Taizoh, Enokida, Toyotsugu, Hagino, Hiroyasu, Ninomiya, Masaharu, Nakamae, Masahiko, Analysis and Evaluation Center, Fukuryo Semicon Engineering Corporation, 1-1-1 Imajuku-Higashi, Fukuoka 819-0192, SUMCO Corporation, 314 Nishisangao, Noda, Chiba 278-0015, & SUMCO Corporation, 2201 Oaza Kamioda, Kohoku-cho, Kishima-gun, Saga 849-0597. Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H{sup +} irradiation and postannealing. United States. doi:10.1063/1.2192644.
Miyao, Masanobu, Tanaka, Masanori, Tsunoda, Isao, Sadoh, Taizoh, Enokida, Toyotsugu, Hagino, Hiroyasu, Ninomiya, Masaharu, Nakamae, Masahiko, Analysis and Evaluation Center, Fukuryo Semicon Engineering Corporation, 1-1-1 Imajuku-Higashi, Fukuoka 819-0192, SUMCO Corporation, 314 Nishisangao, Noda, Chiba 278-0015, and SUMCO Corporation, 2201 Oaza Kamioda, Kohoku-cho, Kishima-gun, Saga 849-0597. Mon . "Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H{sup +} irradiation and postannealing". United States. doi:10.1063/1.2192644.
@article{osti_20779161,
title = {Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H{sup +} irradiation and postannealing},
author = {Miyao, Masanobu and Tanaka, Masanori and Tsunoda, Isao and Sadoh, Taizoh and Enokida, Toyotsugu and Hagino, Hiroyasu and Ninomiya, Masaharu and Nakamae, Masahiko and Analysis and Evaluation Center, Fukuryo Semicon Engineering Corporation, 1-1-1 Imajuku-Higashi, Fukuoka 819-0192 and SUMCO Corporation, 314 Nishisangao, Noda, Chiba 278-0015 and SUMCO Corporation, 2201 Oaza Kamioda, Kohoku-cho, Kishima-gun, Saga 849-0597},
abstractNote = {Strain-relaxation process of SiGe-on-insulator (SGOI) structures in the oxidation induced Ge condensation method has been investigated as a function of the SiGe thickness. Complete relaxation was obtained for thick SGOI layers (>100 nm). However, the relaxation rates abruptly decreased with decreasing SiGe thickness below 50 nm, i.e., the relaxation rate of 30% at 30 nm SiGe thickness. In order to improve this phenomenon, a method combined with H{sup +} irradiation with a medium dose (5x10{sup 15} cm{sup -2}) and postannealing (1200 deg. C) has been developed. This successfully achieved the high relaxation rate (70%) in the ultrathin SGOI (30 nm)},
doi = {10.1063/1.2192644},
journal = {Applied Physics Letters},
number = 14,
volume = 88,
place = {United States},
year = {Mon Apr 03 00:00:00 EDT 2006},
month = {Mon Apr 03 00:00:00 EDT 2006}
}