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Title: Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H{sup +} irradiation and postannealing

Abstract

Strain-relaxation process of SiGe-on-insulator (SGOI) structures in the oxidation induced Ge condensation method has been investigated as a function of the SiGe thickness. Complete relaxation was obtained for thick SGOI layers (>100 nm). However, the relaxation rates abruptly decreased with decreasing SiGe thickness below 50 nm, i.e., the relaxation rate of 30% at 30 nm SiGe thickness. In order to improve this phenomenon, a method combined with H{sup +} irradiation with a medium dose (5x10{sup 15} cm{sup -2}) and postannealing (1200 deg. C) has been developed. This successfully achieved the high relaxation rate (70%) in the ultrathin SGOI (30 nm)

Authors:
; ; ; ; ; ; ;  [1];  [2];  [2];  [2]
  1. Department of Electronics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
20779161
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 14; Other Information: DOI: 10.1063/1.2192644; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; GERMANIUM ALLOYS; GERMANIUM SILICIDES; HYDROGEN IONS 1 PLUS; ION BEAMS; IRRADIATION; LAYERS; OXIDATION; SEMICONDUCTOR MATERIALS; SILICON ALLOYS; STRAINS; STRESS RELAXATION; THICKNESS

Citation Formats

Miyao, Masanobu, Tanaka, Masanori, Tsunoda, Isao, Sadoh, Taizoh, Enokida, Toyotsugu, Hagino, Hiroyasu, Ninomiya, Masaharu, Nakamae, Masahiko, Analysis and Evaluation Center, Fukuryo Semicon Engineering Corporation, 1-1-1 Imajuku-Higashi, Fukuoka 819-0192, SUMCO Corporation, 314 Nishisangao, Noda, Chiba 278-0015, and SUMCO Corporation, 2201 Oaza Kamioda, Kohoku-cho, Kishima-gun, Saga 849-0597. Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H{sup +} irradiation and postannealing. United States: N. p., 2006. Web. doi:10.1063/1.2192644.
Miyao, Masanobu, Tanaka, Masanori, Tsunoda, Isao, Sadoh, Taizoh, Enokida, Toyotsugu, Hagino, Hiroyasu, Ninomiya, Masaharu, Nakamae, Masahiko, Analysis and Evaluation Center, Fukuryo Semicon Engineering Corporation, 1-1-1 Imajuku-Higashi, Fukuoka 819-0192, SUMCO Corporation, 314 Nishisangao, Noda, Chiba 278-0015, & SUMCO Corporation, 2201 Oaza Kamioda, Kohoku-cho, Kishima-gun, Saga 849-0597. Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H{sup +} irradiation and postannealing. United States. doi:10.1063/1.2192644.
Miyao, Masanobu, Tanaka, Masanori, Tsunoda, Isao, Sadoh, Taizoh, Enokida, Toyotsugu, Hagino, Hiroyasu, Ninomiya, Masaharu, Nakamae, Masahiko, Analysis and Evaluation Center, Fukuryo Semicon Engineering Corporation, 1-1-1 Imajuku-Higashi, Fukuoka 819-0192, SUMCO Corporation, 314 Nishisangao, Noda, Chiba 278-0015, and SUMCO Corporation, 2201 Oaza Kamioda, Kohoku-cho, Kishima-gun, Saga 849-0597. Mon . "Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H{sup +} irradiation and postannealing". United States. doi:10.1063/1.2192644.
@article{osti_20779161,
title = {Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H{sup +} irradiation and postannealing},
author = {Miyao, Masanobu and Tanaka, Masanori and Tsunoda, Isao and Sadoh, Taizoh and Enokida, Toyotsugu and Hagino, Hiroyasu and Ninomiya, Masaharu and Nakamae, Masahiko and Analysis and Evaluation Center, Fukuryo Semicon Engineering Corporation, 1-1-1 Imajuku-Higashi, Fukuoka 819-0192 and SUMCO Corporation, 314 Nishisangao, Noda, Chiba 278-0015 and SUMCO Corporation, 2201 Oaza Kamioda, Kohoku-cho, Kishima-gun, Saga 849-0597},
abstractNote = {Strain-relaxation process of SiGe-on-insulator (SGOI) structures in the oxidation induced Ge condensation method has been investigated as a function of the SiGe thickness. Complete relaxation was obtained for thick SGOI layers (>100 nm). However, the relaxation rates abruptly decreased with decreasing SiGe thickness below 50 nm, i.e., the relaxation rate of 30% at 30 nm SiGe thickness. In order to improve this phenomenon, a method combined with H{sup +} irradiation with a medium dose (5x10{sup 15} cm{sup -2}) and postannealing (1200 deg. C) has been developed. This successfully achieved the high relaxation rate (70%) in the ultrathin SGOI (30 nm)},
doi = {10.1063/1.2192644},
journal = {Applied Physics Letters},
number = 14,
volume = 88,
place = {United States},
year = {Mon Apr 03 00:00:00 EDT 2006},
month = {Mon Apr 03 00:00:00 EDT 2006}
}
  • Effects of H{sup +} implantation ({<=}5x10{sup 16} cm{sup -2}) on stress relaxation in an oxidation-induced Ge condensation method have been investigated to form stress-relaxed ultrathin ({approx}30 nm) SiGe-on-insulator (SGOI) virtual substrates. High-dose ({>=}10{sup 15} cm{sup -2}) implantation enhanced stress relaxation, which was attributed to bond breaking at the SiGe/buried SiO{sub 2} interface. However, oxidation velocity was also enhanced due to irradiation defects. Two-step annealing (500 deg. C for 30 min and 850 deg. C for 60 min) before oxidation was proposed to remove irradiation defects. This achieved enhanced stress relaxation in ultrathin SGOI without changing oxidation velocity.
  • We present a method to form ultrathin highly uniform Ni(Al) germanosilicide layers on compressively strained Si{sub 1−x}Ge{sub x} substrates and their structural characteristics. The uniform Ni(Al) germanosilicide film is formed with Ni/Al alloy at an optimized temperature of 400 °C with an optimized Al atomic content of 20 at. %. We find only two kinds of grains in the layer. Both grains show orthogonal relationship with modified B8 type phase. The growth plane is identified to be (10-10)-type plane. After germanosilicidation the strain in the rest Si{sub 1−x}Ge{sub x} layer is conserved, which provides a great advantage for device application.
  • The results of studying the photoluminescence of the structures with Ge(Si) self-assembled islands embedded into tensile-strained Si layer are reported. The structures were grown on smooth relaxed Si{sub 1-x}Ge{sub x}/Si(001) (x = 0.2-0.3) buffer layers. The photoluminescence peak found in the photoluminescence spectra of the studied structures is related to the indirect (in real space) optical transition between the holes localized in the Ge(Si) islands and electrons localized in the tensile-strained Si layers under and above an island. It is shown that one can efficiently control the position of the photoluminescence peak for a specified type of structure by varyingmore » the thickness of the strained Si layers. It is found that, at 77 K, the intensity of the photoluminescence signal from the heterostructures with Ge(Si) self-assembled islands contained between the tensile-strained Si layers exceeds by an order of magnitude the intensity of the photoluminescence signal from the GeSi structures with islands formed on the Si(001) substrates.« less
  • High-quality strain-relaxed SiGe templates with a low threading dislocation density and smooth surface are critical for device performance. In this work, SiGe films on low temperature Si buffer layers were grown by solid-source molecular beam epitaxy and characterized by atomic force microscope, double-axis x-ray diffraction, photoluminescence spectroscopy, and Raman spectroscopy. Effects of the growth temperature and the thickness of the low temperature Si buffer were studied. It was demonstrated that when using proper growth conditions for the low temperature Si buffer the Si buffer became tensily strained and gave rise to the compliant effect. The lattice mismatch between the SiGemore » and the Si buffer layer was reduced. A 500 nm Si{sub 0.7}Ge{sub 0.3} film with a low threading dislocation density as well as smooth surface was obtained by this method. {copyright} 2001 American Institute of Physics.« less
  • The microstructure of strain-relaxed Si{sub 1{minus}x}Ge{sub x}/Si films that relaxed by different dislocation nucleation mechanisms has been investigated using x-ray microdiffraction with a diffracted beam footprint of 1{mu}m{times}5{mu}m. Intensity variations in the x-ray microtopographs of samples having step-graded intermediate layers, which relaxed by dislocation multiplication, are due to the presence of local tilted regions which are larger in area than the diffracted x-ray beam. In contrast, microtopographs of uniform composition layers, which relaxed by surface roughening and subsequent random dislocation nucleation, show little intensity contrast as the local tilted regions in these samples are much smaller than the diffracted x-raymore » beam. The difference in microstructure arises from the different distributions of 60{degree} misfit dislocations in these two types of samples. {copyright} {ital 1999 American Institute of Physics.}« less