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Title: Phosphorus-doped SiC as an excellent p-type Si surface passivation layer

Abstract

The passivation properties of phosphorus-doped amorphous silicon carbide (a-Si{sub x}C{sub 1-x}) layers on monocrystalline Si wafers (floating zone, 1 {omega} cm) have been investigated. The cleaning and the deposition process were performed in our two source (microwave, radio frequency) plasma-enhanced chemical vapor deposition reactor. In situ plasma etching and deposition at 350 deg. C without any following annealing step led to extraordinary low surface recombination velocities of less than 5 cm/s for injection levels between 1x10{sup 14} and 1x10{sup 15} cm{sup -3}. Characterization of the a-Si{sub x}C{sub 1-x} layer was done with quasi-steady-state photoconductance, microwave-detected photoconductance, and carrier density imaging techniques. For injection levels of more than 1x10{sup 15} cm{sup -3} the effective lifetime was limited only by intrinsic Auger recombination.

Authors:
; ; ; ;  [1]
  1. Fraunhofer Institute for Solar Energy Systems, Heidenhofstrasse 2, D-79110 Freiburg (Germany)
Publication Date:
OSTI Identifier:
20779154
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 13; Other Information: DOI: 10.1063/1.2191954; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; AUGER EFFECT; BEAM INJECTION; CARRIER DENSITY; CARRIER LIFETIME; CHEMICAL VAPOR DEPOSITION; DOPED MATERIALS; ETCHING; LAYERS; MICROWAVE RADIATION; PASSIVATION; PHOSPHORUS; PHOTOCONDUCTIVITY; PLASMA; RADIOWAVE RADIATION; RECOMBINATION; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; STEADY-STATE CONDITIONS; ZONE MELTING

Citation Formats

Janz, S., Riepe, S., Hofmann, M., Reber, S., and Glunz, S. Phosphorus-doped SiC as an excellent p-type Si surface passivation layer. United States: N. p., 2006. Web. doi:10.1063/1.2191954.
Janz, S., Riepe, S., Hofmann, M., Reber, S., & Glunz, S. Phosphorus-doped SiC as an excellent p-type Si surface passivation layer. United States. doi:10.1063/1.2191954.
Janz, S., Riepe, S., Hofmann, M., Reber, S., and Glunz, S. Mon . "Phosphorus-doped SiC as an excellent p-type Si surface passivation layer". United States. doi:10.1063/1.2191954.
@article{osti_20779154,
title = {Phosphorus-doped SiC as an excellent p-type Si surface passivation layer},
author = {Janz, S. and Riepe, S. and Hofmann, M. and Reber, S. and Glunz, S.},
abstractNote = {The passivation properties of phosphorus-doped amorphous silicon carbide (a-Si{sub x}C{sub 1-x}) layers on monocrystalline Si wafers (floating zone, 1 {omega} cm) have been investigated. The cleaning and the deposition process were performed in our two source (microwave, radio frequency) plasma-enhanced chemical vapor deposition reactor. In situ plasma etching and deposition at 350 deg. C without any following annealing step led to extraordinary low surface recombination velocities of less than 5 cm/s for injection levels between 1x10{sup 14} and 1x10{sup 15} cm{sup -3}. Characterization of the a-Si{sub x}C{sub 1-x} layer was done with quasi-steady-state photoconductance, microwave-detected photoconductance, and carrier density imaging techniques. For injection levels of more than 1x10{sup 15} cm{sup -3} the effective lifetime was limited only by intrinsic Auger recombination.},
doi = {10.1063/1.2191954},
journal = {Applied Physics Letters},
number = 13,
volume = 88,
place = {United States},
year = {Mon Mar 27 00:00:00 EST 2006},
month = {Mon Mar 27 00:00:00 EST 2006}
}
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