Comparison of structural and optical properties of InAs quantum dots grown by migration-enhanced molecular-beam epitaxy and conventional molecular-beam epitaxy

Journal Article · Mon Mar 27 00:00:00 EST 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2189195· OSTI ID:20779150

Cho, N K; Ryu, S P; Song, J D; Choi, W J; Lee, J I; Jeon, Heonsu ^[1]

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1. Nano Device Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)

We strongly support Guryanov's speculation - that a thinner wetting layer is expected with quantum dots (QDs) grown by migration-enhanced epitaxy--with structural and optical measurements. In As QDs grown by migration-enhanced molecular-beam epitaxy showed a larger size, lower density, {approx}40% enhanced uniformity, {approx}2 times larger aspect ratio, and a measurement temperature insensitivity of the photoluminescence linewidth compared to QDs grown by conventional molecular-beam epitaxy. The thickness of the wetting layer for the migration-enhanced epitaxial InAs QD (2.1 nm) was thinner than that of the counterpart (4.0 nm)

• OSTI ID: 20779150
• Journal Information: Applied Physics Letters, Vol. 88, Issue 13; Other Information: DOI: 10.1063/1.2189195; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ASPECT RATIO
CRYSTAL GROWTH
INDIUM ARSENIDES
LAYERS
MIGRATION
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SUPPORTS
THICKNESS