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Title: Molecular beam epitaxy of YMnO{sub 3} on c-plane GaN

Abstract

Epitaxial YMnO{sub 3} films were grown on (0001) GaN-on-sapphire templates using molecular beam epitaxy. The YMnO{sub 3} maintained the (0001) orientation with an in-plane YMnO{sub 3}/GaN epitaxial relationship of (0001) parallel (0001); [1100] parallel [1120]. The YMnO{sub 3} was ferroelectric at room temperature with a remanent polarization of {approx}3.2 {mu}C/cm{sup 2} and a saturation polarization of {approx}12 {mu}C/cm{sup 2}. This heterostructure is a promising candidate for multifunctional structures that integrate ferroelectrics with GaN-based high-power and short-wavelength light-emitting devices.

Authors:
; ; ; ; ;  [1]
  1. Multifunctional Materials Laboratory, Department of Physics, West Virginia University, Morgantown, West Virginia 26506-6315 (United States)
Publication Date:
OSTI Identifier:
20779148
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 13; Other Information: DOI: 10.1063/1.2189832; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; FERROELECTRIC MATERIALS; GALLIUM NITRIDES; LAYERS; MANGANESE OXIDES; MOLECULAR BEAM EPITAXY; ORIENTATION; POLARIZATION; SAPPHIRE; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; WAVELENGTHS; YTTRIUM COMPOUNDS

Citation Formats

Chye, Y., Liu, T., Li, D., Lee, K., Lederman, D., and Myers, T.H. Molecular beam epitaxy of YMnO{sub 3} on c-plane GaN. United States: N. p., 2006. Web. doi:10.1063/1.2189832.
Chye, Y., Liu, T., Li, D., Lee, K., Lederman, D., & Myers, T.H. Molecular beam epitaxy of YMnO{sub 3} on c-plane GaN. United States. doi:10.1063/1.2189832.
Chye, Y., Liu, T., Li, D., Lee, K., Lederman, D., and Myers, T.H. Mon . "Molecular beam epitaxy of YMnO{sub 3} on c-plane GaN". United States. doi:10.1063/1.2189832.
@article{osti_20779148,
title = {Molecular beam epitaxy of YMnO{sub 3} on c-plane GaN},
author = {Chye, Y. and Liu, T. and Li, D. and Lee, K. and Lederman, D. and Myers, T.H.},
abstractNote = {Epitaxial YMnO{sub 3} films were grown on (0001) GaN-on-sapphire templates using molecular beam epitaxy. The YMnO{sub 3} maintained the (0001) orientation with an in-plane YMnO{sub 3}/GaN epitaxial relationship of (0001) parallel (0001); [1100] parallel [1120]. The YMnO{sub 3} was ferroelectric at room temperature with a remanent polarization of {approx}3.2 {mu}C/cm{sup 2} and a saturation polarization of {approx}12 {mu}C/cm{sup 2}. This heterostructure is a promising candidate for multifunctional structures that integrate ferroelectrics with GaN-based high-power and short-wavelength light-emitting devices.},
doi = {10.1063/1.2189832},
journal = {Applied Physics Letters},
number = 13,
volume = 88,
place = {United States},
year = {Mon Mar 27 00:00:00 EST 2006},
month = {Mon Mar 27 00:00:00 EST 2006}
}
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