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Title: Molecular beam epitaxy growth of In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing

Abstract

We investigated the effects of high temperature ({approx}700 deg. C) in situ rapid thermal annealing (RTA) carried out during growth interruption between spacer and {delta}-doping layers of an In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As metamorphic high electron mobility transistor (MHEMT) grown on a compositionally graded InGaAlAs buffer layer. The in situ RTA improved optical and structural properties of the MHEMT without degradation of transport property, while postgrowth RTA improved the structural property of the MHEMT but significantly degraded mobility due to the defect-assisted Si diffusion. The results indicate the potential of the in situ RTA for use in the growth of high-quality metamorphic epitaxial layers for optoelectronic applications requiring improved optical and electrical properties.

Authors:
; ;  [1]
  1. Department of Information and Communications, Gwangju Institute of Science and Technology (GIST), 1 Oryong-dong, Buk-gu, Gwangju, 500-712 (Korea, Republic of)
Publication Date:
OSTI Identifier:
20779145
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 13; Other Information: DOI: 10.1063/1.2189607; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; ANNEALING; BUFFERS; CHARGED-PARTICLE TRANSPORT; CRYSTAL GROWTH; ELECTRICAL PROPERTIES; ELECTRON MOBILITY; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; SPACERS; TEMPERATURE RANGE 0400-1000 K; TRANSISTORS

Citation Formats

Ihn, Soo-Ghang, Jo, Seong June, and Song, Jong-In. Molecular beam epitaxy growth of In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing. United States: N. p., 2006. Web. doi:10.1063/1.2189607.
Ihn, Soo-Ghang, Jo, Seong June, & Song, Jong-In. Molecular beam epitaxy growth of In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing. United States. doi:10.1063/1.2189607.
Ihn, Soo-Ghang, Jo, Seong June, and Song, Jong-In. Mon . "Molecular beam epitaxy growth of In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing". United States. doi:10.1063/1.2189607.
@article{osti_20779145,
title = {Molecular beam epitaxy growth of In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing},
author = {Ihn, Soo-Ghang and Jo, Seong June and Song, Jong-In},
abstractNote = {We investigated the effects of high temperature ({approx}700 deg. C) in situ rapid thermal annealing (RTA) carried out during growth interruption between spacer and {delta}-doping layers of an In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As metamorphic high electron mobility transistor (MHEMT) grown on a compositionally graded InGaAlAs buffer layer. The in situ RTA improved optical and structural properties of the MHEMT without degradation of transport property, while postgrowth RTA improved the structural property of the MHEMT but significantly degraded mobility due to the defect-assisted Si diffusion. The results indicate the potential of the in situ RTA for use in the growth of high-quality metamorphic epitaxial layers for optoelectronic applications requiring improved optical and electrical properties.},
doi = {10.1063/1.2189607},
journal = {Applied Physics Letters},
number = 13,
volume = 88,
place = {United States},
year = {Mon Mar 27 00:00:00 EST 2006},
month = {Mon Mar 27 00:00:00 EST 2006}
}
  • We report improvement in crystalline quality of In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As multiquantum wells (MQWs) and compositionally graded InAlAs/InAlGaAs metamorphic buffer grown on GaAs by using postgrowth rapid thermal annealing (RTA). Dependence of optical and structural properties of the MQWs on RTA was investigated by using photoluminescence (PL) and triple-axis x-ray diffraction measurements. After the RTA, the PL intensity of the MQWs increased, while the linewidth decreased. Also, the triple-axis contour maps of the MQWs showed increase in peak intensity of epilayers as well as crystalline reformation indicated by narrower mosaic spread and restoration of epilayer tilt to the substratemore » orientation.« less
  • The influence of the width of the quantum well L and doping on the band structure, scattering, and electron mobility in nanoheterostructures with an isomorphic In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As quantum well grown on an InP substrate are investigated. The quantum and transport mobilities of electrons in the dimensionally quantized subbands are determined using Shubnikov-de Haas effect measurements. These mobilities are also calculated for the case of ionized-impurity scattering taking into account intersub-band electron transitions. It is shown that ionized-impurity scattering is the dominant mechanism of electron scattering. At temperatures T < 170 K, persistent photoconductivity is observed,more » which is explained by the spatial separation of photoexcited charge carriers.« less
  • The electron conduction in a two-dimensional channel of an In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As quantum well (QW) with a {delta}-Si doped barrier has been investigated. It is shown that the introduction of thin InAs barriers into the QW reduces the electron scattering rate from the polar optical and interface phonons localized in the QW and increases the electron mobility. It is found experimentally that the saturation of the conduction current in the In{sub 0.53}Ga{sub 0.47}As channel in strong electric fields is determined by not only the sublinear field dependence of the electron drift velocity, but also by themore » decrease in the electron concentration n{sub s} with an increase in the voltage across the channel. The dependence of n{sub s} on the applied voltage is due to the ionized-donor layer located within the {delta}-Si doped In{sub 0.52}Al{sub 0.48}As barrier and oriented parallel to the In{sub 0.53}Ga{sub 0.47}As QW.« less
  • Morphological and physical properties of Al{sub 0.48}In{sub 0.52}As/Ga{sub 0.47}In{sub 0.53}As heterostructures grown by molecular beam epitaxy, lattice relaxed on GaAs substrates and lattice matched on InP substrates, are presented. Both a quaternary linear and step graded lattice relaxed buffer concept is implemented to accomodate the lattice mismatch between the GaAs substrate and the Al{sub 0.48}In{sub 0.52}As/Ga{sub 0.47}In{sub 0.53}As layer sequence. The surface morphology and the transport properties of Al{sub 0.48}In{sub 0.52}As/Ga{sub 0.47}In{sub 0.53}As high electron mobility transistor structures were studied by atomic force microscopy and Hall effect measurements, respectively. Optical properties were investigated by low temperature photoluminescence experiments on quantummore » well structures. The linear graded buffer approach was found to result in superior heterostructure properties due to the two dimensional growth mode during the whole growth process resulting in the typical cross hatched surface morphology. In contrast, the use of step graded buffer layers resulted in three dimensional layer growth and inferior layer quality. However, by increasing the number of steps, i.e., reducing the change in the lattice constant for each step and thus approaching a linear grading, two dimensional growth is recovered. {copyright} {ital 1996 American Institute of Physics.}« less
  • Self-consistent calculations for solving the Poisson and Schr√∂dinger equations were performed in order to study parallel conduction in the In{sub 0.52}Al{sub 0.48}As barrier layer in In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As Modulation Doped Field Effect Transistors. It is shown that the parallel conducting layer occupied sub-bands can be entirely depleted by wet chemical etching of the upper part of the un-doped In{sub 0.52}Al{sub 0.48}As Schottky layer without affecting the total carrier concentration at the In{sub 0.53}Ga{sub 0.47}As quantum well.