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Title: Molecular beam epitaxy growth of In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing

Abstract

We investigated the effects of high temperature ({approx}700 deg. C) in situ rapid thermal annealing (RTA) carried out during growth interruption between spacer and {delta}-doping layers of an In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As metamorphic high electron mobility transistor (MHEMT) grown on a compositionally graded InGaAlAs buffer layer. The in situ RTA improved optical and structural properties of the MHEMT without degradation of transport property, while postgrowth RTA improved the structural property of the MHEMT but significantly degraded mobility due to the defect-assisted Si diffusion. The results indicate the potential of the in situ RTA for use in the growth of high-quality metamorphic epitaxial layers for optoelectronic applications requiring improved optical and electrical properties.

Authors:
; ;  [1]
  1. Department of Information and Communications, Gwangju Institute of Science and Technology (GIST), 1 Oryong-dong, Buk-gu, Gwangju, 500-712 (Korea, Republic of)
Publication Date:
OSTI Identifier:
20779145
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 13; Other Information: DOI: 10.1063/1.2189607; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; ANNEALING; BUFFERS; CHARGED-PARTICLE TRANSPORT; CRYSTAL GROWTH; ELECTRICAL PROPERTIES; ELECTRON MOBILITY; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; SPACERS; TEMPERATURE RANGE 0400-1000 K; TRANSISTORS

Citation Formats

Ihn, Soo-Ghang, Jo, Seong June, and Song, Jong-In. Molecular beam epitaxy growth of In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing. United States: N. p., 2006. Web. doi:10.1063/1.2189607.
Ihn, Soo-Ghang, Jo, Seong June, & Song, Jong-In. Molecular beam epitaxy growth of In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing. United States. doi:10.1063/1.2189607.
Ihn, Soo-Ghang, Jo, Seong June, and Song, Jong-In. Mon . "Molecular beam epitaxy growth of In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing". United States. doi:10.1063/1.2189607.
@article{osti_20779145,
title = {Molecular beam epitaxy growth of In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing},
author = {Ihn, Soo-Ghang and Jo, Seong June and Song, Jong-In},
abstractNote = {We investigated the effects of high temperature ({approx}700 deg. C) in situ rapid thermal annealing (RTA) carried out during growth interruption between spacer and {delta}-doping layers of an In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As metamorphic high electron mobility transistor (MHEMT) grown on a compositionally graded InGaAlAs buffer layer. The in situ RTA improved optical and structural properties of the MHEMT without degradation of transport property, while postgrowth RTA improved the structural property of the MHEMT but significantly degraded mobility due to the defect-assisted Si diffusion. The results indicate the potential of the in situ RTA for use in the growth of high-quality metamorphic epitaxial layers for optoelectronic applications requiring improved optical and electrical properties.},
doi = {10.1063/1.2189607},
journal = {Applied Physics Letters},
number = 13,
volume = 88,
place = {United States},
year = {Mon Mar 27 00:00:00 EST 2006},
month = {Mon Mar 27 00:00:00 EST 2006}
}