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Title: Development of ion sources for materials processing in china

Abstract

This article reviews the development of ion sources for materials processing and the progress of commercial product of ion sources in China. The various ion-beam processing and the relative needs to ion sources are mentioned and discussed, such as ion sources with ion implantation, plasma immersion ion implantation, ion-beam-assisted deposition, ion-beam deposition, and so on. The states of progress for different kinds of ion sources specially for electron cyclotron resonance/microwave, metal vapor vacuum arc, radio frequency (rf) ion source, end-Hall ion source, and cluster ion source, are given and discussed.

Authors:
; ;  [1];  [2]
  1. Institute of Heavy Ion Physics, Peking University, Key Laboratory of Heavy Ion Physics (Peking University), Ministry of Education, Beijing 100871 (China)
  2. (IMP), Chinese Academy of Science, Lanzhou 730000 (China)
Publication Date:
OSTI Identifier:
20779104
Resource Type:
Journal Article
Resource Relation:
Journal Name: Review of Scientific Instruments; Journal Volume: 77; Journal Issue: 3; Conference: 11. international conference on ion sources, Caen (France), 12-16 Sep 2005; Other Information: DOI: 10.1063/1.2170097; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHINA; DEPOSITION; ELECTRON CYCLOTRON-RESONANCE; ION BEAMS; ION IMPLANTATION; ION SOURCES; RADIOWAVE RADIATION

Citation Formats

Zhao, W.J., Ren, X.T., Zhao, H.W., and Institute of Modern Physics. Development of ion sources for materials processing in china. United States: N. p., 2006. Web. doi:10.1063/1.2170097.
Zhao, W.J., Ren, X.T., Zhao, H.W., & Institute of Modern Physics. Development of ion sources for materials processing in china. United States. doi:10.1063/1.2170097.
Zhao, W.J., Ren, X.T., Zhao, H.W., and Institute of Modern Physics. 2006. "Development of ion sources for materials processing in china". United States. doi:10.1063/1.2170097.
@article{osti_20779104,
title = {Development of ion sources for materials processing in china},
author = {Zhao, W.J. and Ren, X.T. and Zhao, H.W. and Institute of Modern Physics},
abstractNote = {This article reviews the development of ion sources for materials processing and the progress of commercial product of ion sources in China. The various ion-beam processing and the relative needs to ion sources are mentioned and discussed, such as ion sources with ion implantation, plasma immersion ion implantation, ion-beam-assisted deposition, ion-beam deposition, and so on. The states of progress for different kinds of ion sources specially for electron cyclotron resonance/microwave, metal vapor vacuum arc, radio frequency (rf) ion source, end-Hall ion source, and cluster ion source, are given and discussed.},
doi = {10.1063/1.2170097},
journal = {Review of Scientific Instruments},
number = 3,
volume = 77,
place = {United States},
year = 2006,
month = 3
}
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