p-type activation of AlGaN by hydrogen desorption using catalytic Ni films
- Department of Applied Chemistry, University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan)
p-type activation of Mg-doped Al{sub 0.03}Ga{sub 0.97}N and Al{sub 0.08}Ga{sub 0.92}N by annealing process with Ni deposition has been investigated. Hole concentrations in both Al{sub 0.03}Ga{sub 0.97}N and Al{sub 0.08}Ga{sub 0.92}N by annealing at around 700 deg. C with Ni were almost two times as high as those in samples annealed without Ni. Secondary ion mass spectroscopy has revealed that hydrogen concentrations in AlGaN annealed with Ni are lower than those without Ni. Thermal desorption spectroscopy showed drastic enhancement in hydrogen desorption at around 450 deg. C from AlGaN films with Ni. We conclude that Ni deposition promotes the hydrogen desorption from AlGaN layers, resulting in effective p-type activation.
- OSTI ID:
- 20778902
- Journal Information:
- Applied Physics Letters, Vol. 88, Issue 15; Other Information: DOI: 10.1063/1.2191827; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effects of plasma treatment on the Ohmic characteristics of Ti/Al/Ti/Au contacts to n-AlGaN
Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes