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Title: p-type activation of AlGaN by hydrogen desorption using catalytic Ni films

Abstract

p-type activation of Mg-doped Al{sub 0.03}Ga{sub 0.97}N and Al{sub 0.08}Ga{sub 0.92}N by annealing process with Ni deposition has been investigated. Hole concentrations in both Al{sub 0.03}Ga{sub 0.97}N and Al{sub 0.08}Ga{sub 0.92}N by annealing at around 700 deg. C with Ni were almost two times as high as those in samples annealed without Ni. Secondary ion mass spectroscopy has revealed that hydrogen concentrations in AlGaN annealed with Ni are lower than those without Ni. Thermal desorption spectroscopy showed drastic enhancement in hydrogen desorption at around 450 deg. C from AlGaN films with Ni. We conclude that Ni deposition promotes the hydrogen desorption from AlGaN layers, resulting in effective p-type activation.

Authors:
; ; ; ;  [1];  [2];  [2];  [2]
  1. Department of Applied Chemistry, University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
20778902
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 15; Other Information: DOI: 10.1063/1.2191827; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM COMPOUNDS; ANNEALING; CHEMICAL VAPOR DEPOSITION; DESORPTION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; GALLIUM COMPOUNDS; HYDROGEN; ION MICROPROBE ANALYSIS; MAGNESIUM; MASS SPECTROSCOPY; NICKEL; NITROGEN COMPOUNDS; SEMICONDUCTOR MATERIALS; THIN FILMS

Citation Formats

Naono, T., Fujioka, H., Okabayashi, J., Oshima, M., Miki, H., Institute of Industrial Science, University of Tokyo, Meguro-ku, Tokyo 153-0041, Japan and Kanagawa Academy of Science and Technology, Kawasaki, Kanagawa 213-0012, Department of Applied Chemistry, University of Tokyo, Bunkyo-ku, Tokyo 113-8656, and Showa Denko KK, Ichihara, Chiba 290-0067. p-type activation of AlGaN by hydrogen desorption using catalytic Ni films. United States: N. p., 2006. Web. doi:10.1063/1.2191827.
Naono, T., Fujioka, H., Okabayashi, J., Oshima, M., Miki, H., Institute of Industrial Science, University of Tokyo, Meguro-ku, Tokyo 153-0041, Japan and Kanagawa Academy of Science and Technology, Kawasaki, Kanagawa 213-0012, Department of Applied Chemistry, University of Tokyo, Bunkyo-ku, Tokyo 113-8656, & Showa Denko KK, Ichihara, Chiba 290-0067. p-type activation of AlGaN by hydrogen desorption using catalytic Ni films. United States. doi:10.1063/1.2191827.
Naono, T., Fujioka, H., Okabayashi, J., Oshima, M., Miki, H., Institute of Industrial Science, University of Tokyo, Meguro-ku, Tokyo 153-0041, Japan and Kanagawa Academy of Science and Technology, Kawasaki, Kanagawa 213-0012, Department of Applied Chemistry, University of Tokyo, Bunkyo-ku, Tokyo 113-8656, and Showa Denko KK, Ichihara, Chiba 290-0067. Mon . "p-type activation of AlGaN by hydrogen desorption using catalytic Ni films". United States. doi:10.1063/1.2191827.
@article{osti_20778902,
title = {p-type activation of AlGaN by hydrogen desorption using catalytic Ni films},
author = {Naono, T. and Fujioka, H. and Okabayashi, J. and Oshima, M. and Miki, H. and Institute of Industrial Science, University of Tokyo, Meguro-ku, Tokyo 153-0041, Japan and Kanagawa Academy of Science and Technology, Kawasaki, Kanagawa 213-0012 and Department of Applied Chemistry, University of Tokyo, Bunkyo-ku, Tokyo 113-8656 and Showa Denko KK, Ichihara, Chiba 290-0067},
abstractNote = {p-type activation of Mg-doped Al{sub 0.03}Ga{sub 0.97}N and Al{sub 0.08}Ga{sub 0.92}N by annealing process with Ni deposition has been investigated. Hole concentrations in both Al{sub 0.03}Ga{sub 0.97}N and Al{sub 0.08}Ga{sub 0.92}N by annealing at around 700 deg. C with Ni were almost two times as high as those in samples annealed without Ni. Secondary ion mass spectroscopy has revealed that hydrogen concentrations in AlGaN annealed with Ni are lower than those without Ni. Thermal desorption spectroscopy showed drastic enhancement in hydrogen desorption at around 450 deg. C from AlGaN films with Ni. We conclude that Ni deposition promotes the hydrogen desorption from AlGaN layers, resulting in effective p-type activation.},
doi = {10.1063/1.2191827},
journal = {Applied Physics Letters},
number = 15,
volume = 88,
place = {United States},
year = {Mon Apr 10 00:00:00 EDT 2006},
month = {Mon Apr 10 00:00:00 EDT 2006}
}
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