Growth and depth dependence of visible luminescence in wurtzite InN epilayers

Journal Article · Mon Apr 10 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2193059· OSTI ID:20778893

Pu, X D; Shen, W Z; Zhang, Z Q; Ogawa, H; Guo, Q X ^[1]

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1. Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030 (China)

We present detailed investigation of growth and depth dependence of visible ({approx}1.9 eV) photoluminescence (PL) in wurtzite InN epilayers grown by magnetron sputtering. For normal surface incidence, PL peak was found to redshift with increasing growth temperatures. Cross-sectional PL measurements were able to separate contributions from the InN epilayers and sapphire substrates, which not only demonstrated the visible luminescence in InN but also revealed the blueshift of the PL peak with laser spot focusing from epilayer surface toward the interface. The results have been well explained by the growth mechanism and residual strain along growth direction of InN epilayers.

• OSTI ID: 20778893
• Journal Information: Applied Physics Letters, Vol. 88, Issue 15; Other Information: DOI: 10.1063/1.2193059; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
DEPOSITION
EPITAXY
EV RANGE 01-10
FOCUSING
INDIUM NITRIDES
INTERFACES
LASERS
LAYERS
PHOTOLUMINESCENCE
RED SHIFT
SAPPHIRE
SEMICONDUCTOR MATERIALS
SPUTTERING
STRAINS
STRESSES
SUBSTRATES
VISIBLE SPECTRA