Electrical breakthrough effect for end pointing in 90 and 45 nm node circuit edit
- Nano-Electronics Division, FEI Company, 5350 NE Dawson Creek Drive Hillsboro, Oregon 97124 (United States)
The interaction between high-energy Ga{sup +} ions and condensed matter is studied for circuit edit applications. A new 'electrical breakthrough effect' due to charging of, and Ga{sup +} penetration/doping into, dielectrics is discovered. This new effect is proposed for end pointing in 90 and 45 nm node circuit edits where integrated circuit device dimensions are of a few hundred nanometers. This new end point approach is very sensitive, reliable, and precise. Most importantly, it is not sensitive to device dimensions. A series of circuit edits involving milling holes of high aspect ratio (5-30) and small cross-section area (0.01-0.25 {mu}m{sup 2}) on real chips has been successfully performed using the electrical breakthrough effect as the end point method.
- OSTI ID:
- 20778860
- Journal Information:
- Applied Physics Letters, Vol. 88, Issue 12; Other Information: DOI: 10.1063/1.2190710; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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