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Title: Electrical breakthrough effect for end pointing in 90 and 45 nm node circuit edit

Abstract

The interaction between high-energy Ga{sup +} ions and condensed matter is studied for circuit edit applications. A new 'electrical breakthrough effect' due to charging of, and Ga{sup +} penetration/doping into, dielectrics is discovered. This new effect is proposed for end pointing in 90 and 45 nm node circuit edits where integrated circuit device dimensions are of a few hundred nanometers. This new end point approach is very sensitive, reliable, and precise. Most importantly, it is not sensitive to device dimensions. A series of circuit edits involving milling holes of high aspect ratio (5-30) and small cross-section area (0.01-0.25 {mu}m{sup 2}) on real chips has been successfully performed using the electrical breakthrough effect as the end point method.

Authors:
; ; ; ; ;  [1]
  1. Nano-Electronics Division, FEI Company, 5350 NE Dawson Creek Drive Hillsboro, Oregon 97124 (United States)
Publication Date:
OSTI Identifier:
20778860
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 12; Other Information: DOI: 10.1063/1.2190710; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ASPECT RATIO; CROSS SECTIONS; DIELECTRIC MATERIALS; GALLIUM IONS; INTEGRATED CIRCUITS; ION BEAMS; MILLING

Citation Formats

Liu, Kun, Soskov, Alex, Scipioni, Larry, Bassom, Neil, Sijbrandij, Sybren, and Smith, Gerald. Electrical breakthrough effect for end pointing in 90 and 45 nm node circuit edit. United States: N. p., 2006. Web. doi:10.1063/1.2190710.
Liu, Kun, Soskov, Alex, Scipioni, Larry, Bassom, Neil, Sijbrandij, Sybren, & Smith, Gerald. Electrical breakthrough effect for end pointing in 90 and 45 nm node circuit edit. United States. doi:10.1063/1.2190710.
Liu, Kun, Soskov, Alex, Scipioni, Larry, Bassom, Neil, Sijbrandij, Sybren, and Smith, Gerald. Mon . "Electrical breakthrough effect for end pointing in 90 and 45 nm node circuit edit". United States. doi:10.1063/1.2190710.
@article{osti_20778860,
title = {Electrical breakthrough effect for end pointing in 90 and 45 nm node circuit edit},
author = {Liu, Kun and Soskov, Alex and Scipioni, Larry and Bassom, Neil and Sijbrandij, Sybren and Smith, Gerald},
abstractNote = {The interaction between high-energy Ga{sup +} ions and condensed matter is studied for circuit edit applications. A new 'electrical breakthrough effect' due to charging of, and Ga{sup +} penetration/doping into, dielectrics is discovered. This new effect is proposed for end pointing in 90 and 45 nm node circuit edits where integrated circuit device dimensions are of a few hundred nanometers. This new end point approach is very sensitive, reliable, and precise. Most importantly, it is not sensitive to device dimensions. A series of circuit edits involving milling holes of high aspect ratio (5-30) and small cross-section area (0.01-0.25 {mu}m{sup 2}) on real chips has been successfully performed using the electrical breakthrough effect as the end point method.},
doi = {10.1063/1.2190710},
journal = {Applied Physics Letters},
number = 12,
volume = 88,
place = {United States},
year = {Mon Mar 20 00:00:00 EST 2006},
month = {Mon Mar 20 00:00:00 EST 2006}
}