skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)

Abstract

Highly uniform InAs quantum wires (QWRs) have been obtained on the In{sub 0.5}Al{sub 0.5}As buffer layer grown on the InP substrate 8{sup (convolutionsign)} off (001) towards (111) by molecular-beam epitaxy. The quasi-periodic composition modulation was spontaneously formed in the In{sub 0.5}Al{sub 0.5}As buffer layer on this misoriented InP (001). The width and period of the In-rich bands are about 10 and 40 nm, respectively. The periodic In-rich bands play a major role in the sequent InAs QWRs growth and the InAs QWRs are well positioned atop In-rich bands. The photoluminescence (PL) measurements showed a significant reduction in full width at half maximum and enhanced PL efficiency for InAs QWRs on misoriented InP(001) as compared to that on normal InP(001)

Authors:
; ; ; ; ; ; ;  [1]
  1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
20778858
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 12; Other Information: DOI: 10.1063/1.2188040; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; BUFFERS; CRYSTAL GROWTH; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LAYERS; MOLECULAR BEAM EPITAXY; PERIODICITY; PHOTOLUMINESCENCE; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SUBSTRATES

Citation Formats

Wang Yuanli, Jin, P., Ye, X.L., Zhang, C.L., Shi, G.X., Li, R.Y., Chen, Y.H., and Wang, Z.G.. High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001). United States: N. p., 2006. Web. doi:10.1063/1.2188040.
Wang Yuanli, Jin, P., Ye, X.L., Zhang, C.L., Shi, G.X., Li, R.Y., Chen, Y.H., & Wang, Z.G.. High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001). United States. doi:10.1063/1.2188040.
Wang Yuanli, Jin, P., Ye, X.L., Zhang, C.L., Shi, G.X., Li, R.Y., Chen, Y.H., and Wang, Z.G.. Mon . "High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)". United States. doi:10.1063/1.2188040.
@article{osti_20778858,
title = {High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)},
author = {Wang Yuanli and Jin, P. and Ye, X.L. and Zhang, C.L. and Shi, G.X. and Li, R.Y. and Chen, Y.H. and Wang, Z.G.},
abstractNote = {Highly uniform InAs quantum wires (QWRs) have been obtained on the In{sub 0.5}Al{sub 0.5}As buffer layer grown on the InP substrate 8{sup (convolutionsign)} off (001) towards (111) by molecular-beam epitaxy. The quasi-periodic composition modulation was spontaneously formed in the In{sub 0.5}Al{sub 0.5}As buffer layer on this misoriented InP (001). The width and period of the In-rich bands are about 10 and 40 nm, respectively. The periodic In-rich bands play a major role in the sequent InAs QWRs growth and the InAs QWRs are well positioned atop In-rich bands. The photoluminescence (PL) measurements showed a significant reduction in full width at half maximum and enhanced PL efficiency for InAs QWRs on misoriented InP(001) as compared to that on normal InP(001)},
doi = {10.1063/1.2188040},
journal = {Applied Physics Letters},
number = 12,
volume = 88,
place = {United States},
year = {Mon Mar 20 00:00:00 EST 2006},
month = {Mon Mar 20 00:00:00 EST 2006}
}
  • The authors report on a postgrowth method to obtain low density InAs/InP(001) quantum dots by solid-source molecular beam epitaxy. They used an approach based on the ripening of the InAs sticks, which is triggered by the sample cooling under arsenic overpressure, before InP capping. Atomic force microscopy images show the evolution of InAs islands from sticks oriented along the [1-10] direction to dot-shaped islands with a density that can be reduced to about 2x10{sup 9} dots/cm{sup 2}. Macro- and microphotoluminescence reveal that these diluted InAs dots exhibit a strong spatial confinement and emit in the 1.55 {mu}m range.
  • We report 2.8 {mu}m emission from compressively strained type-I quantum wells (QWs) grown on InP-based metamorphic InAs{sub x}P{sub 1-x} step-graded buffers. High quality metamorphic graded buffers showed smooth surface morphology and low threading dislocation densities of approximately 2.5 Multiplication-Sign 10{sup 6} cm{sup -2}. High-resolution x-ray diffraction scans showed strong satellites from multiple quantum wells grown on metamorphic buffers, and cross-sectional transmission electron microscopy revealed smooth and coherent quantum well interfaces. Room-temperature photoluminescence emission at 2.8 {mu}m with a narrow linewidth ({approx}50 meV) shows the promise of metamorphic growth for mid-infrared laser diodes on InP.
  • We report room-temperature (RT) electroluminescence (EL) from InAs/InAs{sub x}P{sub 1−x} quantum well (QW) light-emitting diodes (LEDs) over a wide wavelength range of 2.50–2.94 μm. We demonstrate the ability to accurately design strained InAs QW emission wavelengths while maintaining low threading dislocation density, coherent QW interfaces, and high EL intensity. Investigation of the optical properties of the LEDs grown on different InAs{sub x}P{sub 1−x} metamorphic buffers showed higher EL intensity and lower thermal quenching for QWs with higher barriers and stronger carrier confinement. Strong RT EL intensity from LEDs with narrow full-width at half-maximum shows future potential for InAs QW mid-infrared lasermore » diodes on InAsP/InP.« less
  • Multilayer-stacked linear InAs quantum dot (QD) arrays are created on InAs/InGaAsP superlattice templates formed by self-organized anisotropic strain engineering on InP (100) substrates in chemical beam epitaxy. Stacking of the QD arrays with identical emission wavelength in the 1.55 {mu}m region at room temperature is achieved through the insertion of ultrathin GaAs interlayers beneath the QDs with increasing interlayer thickness in successive layers. The increment in the GaAs interlayer thickness compensates the QD size/wavelength increase during strain correlated stacking. This is the demonstration of a three-dimensionally self-ordered QD crystal with fully controlled structural and optical properties.
  • Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longermore » lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1 μs, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.« less