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Title: High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)

Abstract

Highly uniform InAs quantum wires (QWRs) have been obtained on the In{sub 0.5}Al{sub 0.5}As buffer layer grown on the InP substrate 8{sup (convolutionsign)} off (001) towards (111) by molecular-beam epitaxy. The quasi-periodic composition modulation was spontaneously formed in the In{sub 0.5}Al{sub 0.5}As buffer layer on this misoriented InP (001). The width and period of the In-rich bands are about 10 and 40 nm, respectively. The periodic In-rich bands play a major role in the sequent InAs QWRs growth and the InAs QWRs are well positioned atop In-rich bands. The photoluminescence (PL) measurements showed a significant reduction in full width at half maximum and enhanced PL efficiency for InAs QWRs on misoriented InP(001) as compared to that on normal InP(001)

Authors:
; ; ; ; ; ; ;  [1]
  1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
20778858
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 12; Other Information: DOI: 10.1063/1.2188040; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; BUFFERS; CRYSTAL GROWTH; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LAYERS; MOLECULAR BEAM EPITAXY; PERIODICITY; PHOTOLUMINESCENCE; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SUBSTRATES

Citation Formats

Wang Yuanli, Jin, P., Ye, X.L., Zhang, C.L., Shi, G.X., Li, R.Y., Chen, Y.H., and Wang, Z.G. High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001). United States: N. p., 2006. Web. doi:10.1063/1.2188040.
Wang Yuanli, Jin, P., Ye, X.L., Zhang, C.L., Shi, G.X., Li, R.Y., Chen, Y.H., & Wang, Z.G. High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001). United States. doi:10.1063/1.2188040.
Wang Yuanli, Jin, P., Ye, X.L., Zhang, C.L., Shi, G.X., Li, R.Y., Chen, Y.H., and Wang, Z.G. Mon . "High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)". United States. doi:10.1063/1.2188040.
@article{osti_20778858,
title = {High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)},
author = {Wang Yuanli and Jin, P. and Ye, X.L. and Zhang, C.L. and Shi, G.X. and Li, R.Y. and Chen, Y.H. and Wang, Z.G.},
abstractNote = {Highly uniform InAs quantum wires (QWRs) have been obtained on the In{sub 0.5}Al{sub 0.5}As buffer layer grown on the InP substrate 8{sup (convolutionsign)} off (001) towards (111) by molecular-beam epitaxy. The quasi-periodic composition modulation was spontaneously formed in the In{sub 0.5}Al{sub 0.5}As buffer layer on this misoriented InP (001). The width and period of the In-rich bands are about 10 and 40 nm, respectively. The periodic In-rich bands play a major role in the sequent InAs QWRs growth and the InAs QWRs are well positioned atop In-rich bands. The photoluminescence (PL) measurements showed a significant reduction in full width at half maximum and enhanced PL efficiency for InAs QWRs on misoriented InP(001) as compared to that on normal InP(001)},
doi = {10.1063/1.2188040},
journal = {Applied Physics Letters},
number = 12,
volume = 88,
place = {United States},
year = {Mon Mar 20 00:00:00 EST 2006},
month = {Mon Mar 20 00:00:00 EST 2006}
}