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Title: Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH{sub 4} and NH{sub 3}

Abstract

Crystalline silicon quantum dots (Si QDs) were spontaneously grown in the silicon nitride films by plasma-enhanced chemical vapor deposition using SiH{sub 4} and NH{sub 3} as precursors. When the size of the Si QDs was reduced from 4.9 to 2.9 nm, the photoluminescence peak energy was shifted from 1.73 to 2.77 eV. The photoluminescence peak energy was fitted to the relationship, E(eV)=1.13+13.9/d{sup 2}, where d is the diameter of the Si QD in nanometers. The measured band-gap energies of the Si QDs were in good agreement with the quantum confinement model for crystalline Si QDs. These results suggest that the hydrogen dissociated from NH{sub 3} plays an important role in improving the crystallinity and surface passivation of Si QDs.

Authors:
; ; ;  [1]
  1. Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)
Publication Date:
OSTI Identifier:
20778857
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 12; Other Information: DOI: 10.1063/1.2187434; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMMONIA; CHEMICAL VAPOR DEPOSITION; CONFINEMENT; ENERGY GAP; HYDROGEN; PASSIVATION; PHOTOLUMINESCENCE; PLASMA; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SILANES; SILICON; SILICON NITRIDES; THIN FILMS

Citation Formats

Kim, Tae-Wook, Cho, Chang-Hee, Kim, Baek-Hyun, and Park, Seong-Ju. Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH{sub 4} and NH{sub 3}. United States: N. p., 2006. Web. doi:10.1063/1.2187434.
Kim, Tae-Wook, Cho, Chang-Hee, Kim, Baek-Hyun, & Park, Seong-Ju. Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH{sub 4} and NH{sub 3}. United States. doi:10.1063/1.2187434.
Kim, Tae-Wook, Cho, Chang-Hee, Kim, Baek-Hyun, and Park, Seong-Ju. Mon . "Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH{sub 4} and NH{sub 3}". United States. doi:10.1063/1.2187434.
@article{osti_20778857,
title = {Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH{sub 4} and NH{sub 3}},
author = {Kim, Tae-Wook and Cho, Chang-Hee and Kim, Baek-Hyun and Park, Seong-Ju},
abstractNote = {Crystalline silicon quantum dots (Si QDs) were spontaneously grown in the silicon nitride films by plasma-enhanced chemical vapor deposition using SiH{sub 4} and NH{sub 3} as precursors. When the size of the Si QDs was reduced from 4.9 to 2.9 nm, the photoluminescence peak energy was shifted from 1.73 to 2.77 eV. The photoluminescence peak energy was fitted to the relationship, E(eV)=1.13+13.9/d{sup 2}, where d is the diameter of the Si QD in nanometers. The measured band-gap energies of the Si QDs were in good agreement with the quantum confinement model for crystalline Si QDs. These results suggest that the hydrogen dissociated from NH{sub 3} plays an important role in improving the crystallinity and surface passivation of Si QDs.},
doi = {10.1063/1.2187434},
journal = {Applied Physics Letters},
number = 12,
volume = 88,
place = {United States},
year = {Mon Mar 20 00:00:00 EST 2006},
month = {Mon Mar 20 00:00:00 EST 2006}
}