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Title: Photoluminescence of Ge/Si structures grown on oxidized Si surfaces

Abstract

Ge/Si structures grown on oxidized Si surfaces are studied by means of photoluminescence (PL). High-temperature annealing of the structures leads to the increase of their PL intensity by at least one order of magnitude at energies around 0.82 eV. It is suggested that relaxation of strain, existing in our structures due to the Ge/Si lattice mismatch, occurs through the formation of defects such as interstitial clusters in the Si layer capping the layer of Ge islands. These defects in conjunction with oxygen complexes of the rest of the Si oxide film provide the intense PL in the D1 range.

Authors:
; ; ; ;  [1]
  1. Quantum-Phase Electronics Center, Department of Applied Physics, Graduate School of Engineering, University of Tokyo (Japan) and Japan Science and Technology Agency, CREST, 7-3-1 Hongo, Bunkyo-ku Tokyo, Tokyo 113-8656 (Japan)
Publication Date:
OSTI Identifier:
20778851
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 12; Other Information: DOI: 10.1063/1.2189113; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CRYSTAL GROWTH; FILMS; GERMANIUM; INTERSTITIALS; LAYERS; MOLECULAR BEAM EPITAXY; OXIDES; OXYGEN COMPLEXES; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SILICON; STRESS RELAXATION

Citation Formats

Shklyaev, A.A., Nobuki, S., Uchida, S., Nakamura, Y., and Ichikawa, M.. Photoluminescence of Ge/Si structures grown on oxidized Si surfaces. United States: N. p., 2006. Web. doi:10.1063/1.2189113.
Shklyaev, A.A., Nobuki, S., Uchida, S., Nakamura, Y., & Ichikawa, M.. Photoluminescence of Ge/Si structures grown on oxidized Si surfaces. United States. doi:10.1063/1.2189113.
Shklyaev, A.A., Nobuki, S., Uchida, S., Nakamura, Y., and Ichikawa, M.. Mon . "Photoluminescence of Ge/Si structures grown on oxidized Si surfaces". United States. doi:10.1063/1.2189113.
@article{osti_20778851,
title = {Photoluminescence of Ge/Si structures grown on oxidized Si surfaces},
author = {Shklyaev, A.A. and Nobuki, S. and Uchida, S. and Nakamura, Y. and Ichikawa, M.},
abstractNote = {Ge/Si structures grown on oxidized Si surfaces are studied by means of photoluminescence (PL). High-temperature annealing of the structures leads to the increase of their PL intensity by at least one order of magnitude at energies around 0.82 eV. It is suggested that relaxation of strain, existing in our structures due to the Ge/Si lattice mismatch, occurs through the formation of defects such as interstitial clusters in the Si layer capping the layer of Ge islands. These defects in conjunction with oxygen complexes of the rest of the Si oxide film provide the intense PL in the D1 range.},
doi = {10.1063/1.2189113},
journal = {Applied Physics Letters},
number = 12,
volume = 88,
place = {United States},
year = {Mon Mar 20 00:00:00 EST 2006},
month = {Mon Mar 20 00:00:00 EST 2006}
}
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