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Title: Dynamic longitudinal-optical phonon decay via transient electron-phonon interactions in low-temperature-grown GaAs

Abstract

We present results on dynamic decay of coherent longitudinal-optical phonons in a low-temperature-grown GaAs. We show that the observed behavior originates from transient electron-phonon scatterings which reflect the depletion of carriers from the surface via carrier trapping and diffusion processes. The electron longitudinal-optical (LO)-phonon scattering rate of around 8.6x10{sup -18} ps{sup -1} cm{sup 3} is obtained from the excitation density dependence of the scattering rate.

Authors:
; ; ; ; ; ; ;  [1];  [2];  [3];  [3]
  1. Department of Physics, Chungnam National University, Daejeon 305-764 (Korea, Republic of)
  2. (United States)
  3. (Korea, Republic of)
Publication Date:
OSTI Identifier:
20778847
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 12; Other Information: DOI: 10.1063/1.2188590; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE CARRIERS; CRYSTAL GROWTH; ELECTRON-PHONON COUPLING; ELECTRONS; EXCITATION; GALLIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; PHONONS; SCATTERING; SEMICONDUCTOR MATERIALS; TRAPPING

Citation Formats

Yee, K.J., Lee, D., Liu, X., Dobrowolska, M., Furdyna, J.K., Lee, K.G., Kim, D.S., Lim, Y., Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, Department of Physics, Seoul National University, Seoul 151-747, and Department of Applied Physics, Konkuk University, Chungju, Chungbuk 380-701. Dynamic longitudinal-optical phonon decay via transient electron-phonon interactions in low-temperature-grown GaAs. United States: N. p., 2006. Web. doi:10.1063/1.2188590.
Yee, K.J., Lee, D., Liu, X., Dobrowolska, M., Furdyna, J.K., Lee, K.G., Kim, D.S., Lim, Y., Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, Department of Physics, Seoul National University, Seoul 151-747, & Department of Applied Physics, Konkuk University, Chungju, Chungbuk 380-701. Dynamic longitudinal-optical phonon decay via transient electron-phonon interactions in low-temperature-grown GaAs. United States. doi:10.1063/1.2188590.
Yee, K.J., Lee, D., Liu, X., Dobrowolska, M., Furdyna, J.K., Lee, K.G., Kim, D.S., Lim, Y., Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, Department of Physics, Seoul National University, Seoul 151-747, and Department of Applied Physics, Konkuk University, Chungju, Chungbuk 380-701. Mon . "Dynamic longitudinal-optical phonon decay via transient electron-phonon interactions in low-temperature-grown GaAs". United States. doi:10.1063/1.2188590.
@article{osti_20778847,
title = {Dynamic longitudinal-optical phonon decay via transient electron-phonon interactions in low-temperature-grown GaAs},
author = {Yee, K.J. and Lee, D. and Liu, X. and Dobrowolska, M. and Furdyna, J.K. and Lee, K.G. and Kim, D.S. and Lim, Y. and Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 and Department of Physics, Seoul National University, Seoul 151-747 and Department of Applied Physics, Konkuk University, Chungju, Chungbuk 380-701},
abstractNote = {We present results on dynamic decay of coherent longitudinal-optical phonons in a low-temperature-grown GaAs. We show that the observed behavior originates from transient electron-phonon scatterings which reflect the depletion of carriers from the surface via carrier trapping and diffusion processes. The electron longitudinal-optical (LO)-phonon scattering rate of around 8.6x10{sup -18} ps{sup -1} cm{sup 3} is obtained from the excitation density dependence of the scattering rate.},
doi = {10.1063/1.2188590},
journal = {Applied Physics Letters},
number = 12,
volume = 88,
place = {United States},
year = {Mon Mar 20 00:00:00 EST 2006},
month = {Mon Mar 20 00:00:00 EST 2006}
}
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