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Title: Surface nanostructuring and optical activation of lithium fluoride crystals by ion beam irradiation

Abstract

We present results on simultaneous nanostructuring and optical activation of lithium fluoride crystals by 800 eV off-normal Ar{sup +} sputtering at different ion doses. The samples were studied by atomic force microscopy and optical spectroscopy. After ion irradiation smoothening of the initial random roughness is achieved and well-defined self-organized ripple structures appear, having a mean periodicity of 30 nm and a mean height of 3 nm. The simultaneous optical activation of the irradiated samples is due to the stable formation of electronic defects with intense photoluminescence in the visible spectral range.

Authors:
; ; ; ; ; ;  [1];  [2]
  1. Physics Department, University of Genova, V. Dodecaneso 33, 16146 Genova (Italy)
  2. (Italy)
Publication Date:
OSTI Identifier:
20778790
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 10; Other Information: DOI: 10.1063/1.2177660; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ARGON IONS; ATOMIC FORCE MICROSCOPY; CRYSTALS; DEFECTS; EV RANGE 100-1000; ION BEAMS; IRRADIATION; LITHIUM FLUORIDES; NANOSTRUCTURES; PERIODICITY; PHOTOLUMINESCENCE; RANDOMNESS; ROUGHNESS; SPECTROSCOPY; SPUTTERING; SURFACE TREATMENTS

Citation Formats

Mussi, V., Granone, F., Boragno, C., Buatier de Mongeot, F., Valbusa, U., Marolo, T., Montereali, R.M., and ENEA, Advanced Physical Technologies, C.R. Frascati, V. E. Fermi 45, 00044 Frascati. Surface nanostructuring and optical activation of lithium fluoride crystals by ion beam irradiation. United States: N. p., 2006. Web. doi:10.1063/1.2177660.
Mussi, V., Granone, F., Boragno, C., Buatier de Mongeot, F., Valbusa, U., Marolo, T., Montereali, R.M., & ENEA, Advanced Physical Technologies, C.R. Frascati, V. E. Fermi 45, 00044 Frascati. Surface nanostructuring and optical activation of lithium fluoride crystals by ion beam irradiation. United States. doi:10.1063/1.2177660.
Mussi, V., Granone, F., Boragno, C., Buatier de Mongeot, F., Valbusa, U., Marolo, T., Montereali, R.M., and ENEA, Advanced Physical Technologies, C.R. Frascati, V. E. Fermi 45, 00044 Frascati. Mon . "Surface nanostructuring and optical activation of lithium fluoride crystals by ion beam irradiation". United States. doi:10.1063/1.2177660.
@article{osti_20778790,
title = {Surface nanostructuring and optical activation of lithium fluoride crystals by ion beam irradiation},
author = {Mussi, V. and Granone, F. and Boragno, C. and Buatier de Mongeot, F. and Valbusa, U. and Marolo, T. and Montereali, R.M. and ENEA, Advanced Physical Technologies, C.R. Frascati, V. E. Fermi 45, 00044 Frascati},
abstractNote = {We present results on simultaneous nanostructuring and optical activation of lithium fluoride crystals by 800 eV off-normal Ar{sup +} sputtering at different ion doses. The samples were studied by atomic force microscopy and optical spectroscopy. After ion irradiation smoothening of the initial random roughness is achieved and well-defined self-organized ripple structures appear, having a mean periodicity of 30 nm and a mean height of 3 nm. The simultaneous optical activation of the irradiated samples is due to the stable formation of electronic defects with intense photoluminescence in the visible spectral range.},
doi = {10.1063/1.2177660},
journal = {Applied Physics Letters},
number = 10,
volume = 88,
place = {United States},
year = {Mon Mar 06 00:00:00 EST 2006},
month = {Mon Mar 06 00:00:00 EST 2006}
}
  • Single crystal (100) wafers of n-InSb were implanted with 50 MeV Li{sup 3+} ions at various fluences ranging from 10{sup 10} to 10{sup 14}ions/cm{sup 2} at room temperature. Investigations of the optical, electrical, and structural properties of the as-grown, irradiated, annealed wafers were carried out by infrared and Raman spectroscopies, Hall measurements, and high resolution x-ray diffraction (HRXRD). In the case of samples irradiated with an ion fluence of 1.6 x 10{sup 14}ions/cm{sup 2}, electrical measurements at 80 K reveal that there is a decrease in carrier concentration from 8.5 x 10{sup 15} (for unirradiated) to 1.1 x 10{sup 15}/cm{supmore » 3} and an increase in mobility from 5.4 x 10{sup 4} to 1.67 x 10{sup 5}cm{sup 2}/Vs. The change in carrier concentration is attributed to the creation of electron trap centers induced by ion beam irradiation and the increase in mobility to the formation of electrical inactive complexes. Nevertheless, even with the irradiation at 1.6 x 10{sup 14}ions/cm{sup 2} fluence the crystalline quality remains largely unaffected, as is seen from HRXRD and Raman studies. {copyright} 2001 American Institute of Physics.« less
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