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Title: In situ monitoring of internal strain and height of InAs nanoislands grown on GaAs(001)

Abstract

A monitoring technique for molecular beam epitaxial growth of InAs/GaAs(001) nanoislands is presented. With the help of synchrotron radiation, x-ray diffraction intensity mapping in reciprocal space has been measured during growth. The internal strain distribution and height of the Stranski-Krastanov islands were monitored at a temporal resolution of 9.6 s. The relaxation process of internal strain inside the Stranski-Krastanov islands displayed significant dependence on the growth temperature.

Authors:
; ;  [1]
  1. Synchrotron Radiation Research Center, Japan Atomic Energy Research Institute, Mikazuki-cho, Hyogo 679-5148 (Japan)
Publication Date:
OSTI Identifier:
20778783
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 10; Other Information: DOI: 10.1063/1.2186106; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; DISTRIBUTION; GALLIUM ARSENIDES; INDIUM ARSENIDES; MAGNETIC ISLANDS; MAPPING; MOLECULAR BEAM EPITAXY; QUANTUM DOTS; RESOLUTION; SEMICONDUCTOR MATERIALS; STRAINS; STRESS RELAXATION; SYNCHROTRON RADIATION; X-RAY DIFFRACTION

Citation Formats

Takahasi, Masamitu, Kaizu, Toshiyuki, and Mizuki, Jun'ichiro. In situ monitoring of internal strain and height of InAs nanoislands grown on GaAs(001). United States: N. p., 2006. Web. doi:10.1063/1.2186106.
Takahasi, Masamitu, Kaizu, Toshiyuki, & Mizuki, Jun'ichiro. In situ monitoring of internal strain and height of InAs nanoislands grown on GaAs(001). United States. doi:10.1063/1.2186106.
Takahasi, Masamitu, Kaizu, Toshiyuki, and Mizuki, Jun'ichiro. Mon . "In situ monitoring of internal strain and height of InAs nanoislands grown on GaAs(001)". United States. doi:10.1063/1.2186106.
@article{osti_20778783,
title = {In situ monitoring of internal strain and height of InAs nanoislands grown on GaAs(001)},
author = {Takahasi, Masamitu and Kaizu, Toshiyuki and Mizuki, Jun'ichiro},
abstractNote = {A monitoring technique for molecular beam epitaxial growth of InAs/GaAs(001) nanoislands is presented. With the help of synchrotron radiation, x-ray diffraction intensity mapping in reciprocal space has been measured during growth. The internal strain distribution and height of the Stranski-Krastanov islands were monitored at a temporal resolution of 9.6 s. The relaxation process of internal strain inside the Stranski-Krastanov islands displayed significant dependence on the growth temperature.},
doi = {10.1063/1.2186106},
journal = {Applied Physics Letters},
number = 10,
volume = 88,
place = {United States},
year = {Mon Mar 06 00:00:00 EST 2006},
month = {Mon Mar 06 00:00:00 EST 2006}
}