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Title: Silicon and silicon oxide etching rate enhancement by nitrogen containing gas addition in remote perfluorocarbon plasmas

Abstract

The addition of 3% nitrogen to a mixture of perfluorocarbon/oxygen/argon in a remote toroidal plasma source was shown to double the etching rate of both silicon dioxide and silicon in a downstream process. It is believed that the nitrogen blocks the surface recombination sites for COF{sub 2} formation on the wall of the transfer tube, thereby transporting more fluorine atoms to the downstream process chamber and increasing the etching rate.

Authors:
; ;  [1];  [2]
  1. Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
20778778
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 10; Other Information: DOI: 10.1063/1.2185254; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ARGON; ATOMS; ETCHING; FLUORIDES; FLUORINE; MIXTURES; NITROGEN; OXYGEN; PLASMA; RECOMBINATION; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; SPUTTERING; TUBES; WALL EFFECTS

Citation Formats

Bai Bo, An Jujin, Sawin, Herbert H., and Department of Chemical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139. Silicon and silicon oxide etching rate enhancement by nitrogen containing gas addition in remote perfluorocarbon plasmas. United States: N. p., 2006. Web. doi:10.1063/1.2185254.
Bai Bo, An Jujin, Sawin, Herbert H., & Department of Chemical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139. Silicon and silicon oxide etching rate enhancement by nitrogen containing gas addition in remote perfluorocarbon plasmas. United States. doi:10.1063/1.2185254.
Bai Bo, An Jujin, Sawin, Herbert H., and Department of Chemical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139. Mon . "Silicon and silicon oxide etching rate enhancement by nitrogen containing gas addition in remote perfluorocarbon plasmas". United States. doi:10.1063/1.2185254.
@article{osti_20778778,
title = {Silicon and silicon oxide etching rate enhancement by nitrogen containing gas addition in remote perfluorocarbon plasmas},
author = {Bai Bo and An Jujin and Sawin, Herbert H. and Department of Chemical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139},
abstractNote = {The addition of 3% nitrogen to a mixture of perfluorocarbon/oxygen/argon in a remote toroidal plasma source was shown to double the etching rate of both silicon dioxide and silicon in a downstream process. It is believed that the nitrogen blocks the surface recombination sites for COF{sub 2} formation on the wall of the transfer tube, thereby transporting more fluorine atoms to the downstream process chamber and increasing the etching rate.},
doi = {10.1063/1.2185254},
journal = {Applied Physics Letters},
number = 10,
volume = 88,
place = {United States},
year = {Mon Mar 06 00:00:00 EST 2006},
month = {Mon Mar 06 00:00:00 EST 2006}
}