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Title: High-efficiency InGaN-based light-emitting diodes with nanoporous GaN:Mg structure

Abstract

In this research nanoporous structures on p-type GaN:Mg and n-type GaN:Si surfaces were fabricated through a photoelectrochemical (PEC) oxidation and an oxide-removing process. The photoluminescence (PL) intensities of GaN and InGaN/GaN multi-quantum-well (MQW) structures were enhanced by forming this nanoporous structure to increase light extraction efficiency. The PL emission peaks of an MQW active layer have a blueshift phenomenon from 465.5 nm (standard) to 456.0 nm (nanoporous) measured at 300 K which was caused by partially releasing the compressive strain from the top GaN:Mg layers. The internal quantum efficiency could be increased by a partial strain release that induces a lower piezoelectric field in the active layer. The thermal activation energy of a nanoporous structure (85 meV) is higher than the standard one (33 meV) from a temperature dependent PL measurement. The internal quantum efficiency and light extraction efficiency of an InGaN/GaN MQW active layer are significantly enhanced by this nanoporous GaN:Mg surface, and this PEC treated nanoporous structure is suitable for high-power lighting applications.

Authors:
; ; ; ; ; ; ;  [1];  [2];  [2]
  1. Department of Materials Engineering, National Chung Hsing University, Taichung, Taiwan (China)
  2. (China)
Publication Date:
OSTI Identifier:
20778693
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 8; Other Information: DOI: 10.1063/1.2178477; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; GALLIUM NITRIDES; INDIUM NITRIDES; LAYERS; LIGHT EMITTING DIODES; MAGNESIUM; MEV RANGE 10-100; OXIDATION; OXIDES; PHOTOLUMINESCENCE; PIEZOELECTRICITY; POROUS MATERIALS; QUANTUM EFFICIENCY; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SILICON; SPECTRAL SHIFT; STRAINS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K

Citation Formats

Lin Chiafeng, Zheng Jinghui, Yang Zhongjie, Dai Jingjie, Lin Deryuh, Chang Chungying, Lai Zhaoxu, Hong, C.S., Department of Electronic Engineering, National Changhua University of Education, Changhua, Taiwan, and Luxxon Technology Corporation, Shinwu Shiang, Taoyuan County. High-efficiency InGaN-based light-emitting diodes with nanoporous GaN:Mg structure. United States: N. p., 2006. Web. doi:10.1063/1.2178477.
Lin Chiafeng, Zheng Jinghui, Yang Zhongjie, Dai Jingjie, Lin Deryuh, Chang Chungying, Lai Zhaoxu, Hong, C.S., Department of Electronic Engineering, National Changhua University of Education, Changhua, Taiwan, & Luxxon Technology Corporation, Shinwu Shiang, Taoyuan County. High-efficiency InGaN-based light-emitting diodes with nanoporous GaN:Mg structure. United States. doi:10.1063/1.2178477.
Lin Chiafeng, Zheng Jinghui, Yang Zhongjie, Dai Jingjie, Lin Deryuh, Chang Chungying, Lai Zhaoxu, Hong, C.S., Department of Electronic Engineering, National Changhua University of Education, Changhua, Taiwan, and Luxxon Technology Corporation, Shinwu Shiang, Taoyuan County. Mon . "High-efficiency InGaN-based light-emitting diodes with nanoporous GaN:Mg structure". United States. doi:10.1063/1.2178477.
@article{osti_20778693,
title = {High-efficiency InGaN-based light-emitting diodes with nanoporous GaN:Mg structure},
author = {Lin Chiafeng and Zheng Jinghui and Yang Zhongjie and Dai Jingjie and Lin Deryuh and Chang Chungying and Lai Zhaoxu and Hong, C.S. and Department of Electronic Engineering, National Changhua University of Education, Changhua, Taiwan and Luxxon Technology Corporation, Shinwu Shiang, Taoyuan County},
abstractNote = {In this research nanoporous structures on p-type GaN:Mg and n-type GaN:Si surfaces were fabricated through a photoelectrochemical (PEC) oxidation and an oxide-removing process. The photoluminescence (PL) intensities of GaN and InGaN/GaN multi-quantum-well (MQW) structures were enhanced by forming this nanoporous structure to increase light extraction efficiency. The PL emission peaks of an MQW active layer have a blueshift phenomenon from 465.5 nm (standard) to 456.0 nm (nanoporous) measured at 300 K which was caused by partially releasing the compressive strain from the top GaN:Mg layers. The internal quantum efficiency could be increased by a partial strain release that induces a lower piezoelectric field in the active layer. The thermal activation energy of a nanoporous structure (85 meV) is higher than the standard one (33 meV) from a temperature dependent PL measurement. The internal quantum efficiency and light extraction efficiency of an InGaN/GaN MQW active layer are significantly enhanced by this nanoporous GaN:Mg surface, and this PEC treated nanoporous structure is suitable for high-power lighting applications.},
doi = {10.1063/1.2178477},
journal = {Applied Physics Letters},
number = 8,
volume = 88,
place = {United States},
year = {Mon Feb 20 00:00:00 EST 2006},
month = {Mon Feb 20 00:00:00 EST 2006}
}