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Title: A technique for uniform generation of very-high-frequency plasma suited to large-area thin-film deposition

Abstract

Two very-high-frequency powers between which the phase difference is varying in split of time are supplied to a ladder-shaped electrode through multiple feeding points located at symmetrical positions of the electrode to generate a large-area uniform plasma. Theoretical calculations of the voltage distribution at several phase difference show good agreement with experiments. Plasma emission uniformity within {+-}15% is demonstrated at 60 MHz for the substrate size of 1.4x1.1 m, with nitrogen gas of 10 Pa.

Authors:
; ; ; ;  [1];  [2];  [2]
  1. Advanced Technology Research Center, Mitsubishi Heavy Industries, Ltd., 1-8-1, Sachiura, Kanazawa, Yokohama 236-8515 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
20778687
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 8; Other Information: DOI: 10.1063/1.2176867; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITION; ELECTRIC POTENTIAL; ELECTRODES; MHZ RANGE 01-100; NITROGEN; PLASMA; PRESSURE RANGE PA; SUBSTRATES; THIN FILMS

Citation Formats

Yamakoshi, H., Satake, K., Takeuchi, Y., Mashima, H., Aoi, T., Nagasaki R and D Center, Mitsubishi Heavy Industries, Ltd., Fukahori, Nagasaki 851-0392, and Hiroshima R and D Center, Mitsubishi Heavy Industries, Ltd., Nishi, Hiroshima 733-8553. A technique for uniform generation of very-high-frequency plasma suited to large-area thin-film deposition. United States: N. p., 2006. Web. doi:10.1063/1.2176867.
Yamakoshi, H., Satake, K., Takeuchi, Y., Mashima, H., Aoi, T., Nagasaki R and D Center, Mitsubishi Heavy Industries, Ltd., Fukahori, Nagasaki 851-0392, & Hiroshima R and D Center, Mitsubishi Heavy Industries, Ltd., Nishi, Hiroshima 733-8553. A technique for uniform generation of very-high-frequency plasma suited to large-area thin-film deposition. United States. doi:10.1063/1.2176867.
Yamakoshi, H., Satake, K., Takeuchi, Y., Mashima, H., Aoi, T., Nagasaki R and D Center, Mitsubishi Heavy Industries, Ltd., Fukahori, Nagasaki 851-0392, and Hiroshima R and D Center, Mitsubishi Heavy Industries, Ltd., Nishi, Hiroshima 733-8553. Mon . "A technique for uniform generation of very-high-frequency plasma suited to large-area thin-film deposition". United States. doi:10.1063/1.2176867.
@article{osti_20778687,
title = {A technique for uniform generation of very-high-frequency plasma suited to large-area thin-film deposition},
author = {Yamakoshi, H. and Satake, K. and Takeuchi, Y. and Mashima, H. and Aoi, T. and Nagasaki R and D Center, Mitsubishi Heavy Industries, Ltd., Fukahori, Nagasaki 851-0392 and Hiroshima R and D Center, Mitsubishi Heavy Industries, Ltd., Nishi, Hiroshima 733-8553},
abstractNote = {Two very-high-frequency powers between which the phase difference is varying in split of time are supplied to a ladder-shaped electrode through multiple feeding points located at symmetrical positions of the electrode to generate a large-area uniform plasma. Theoretical calculations of the voltage distribution at several phase difference show good agreement with experiments. Plasma emission uniformity within {+-}15% is demonstrated at 60 MHz for the substrate size of 1.4x1.1 m, with nitrogen gas of 10 Pa.},
doi = {10.1063/1.2176867},
journal = {Applied Physics Letters},
number = 8,
volume = 88,
place = {United States},
year = {Mon Feb 20 00:00:00 EST 2006},
month = {Mon Feb 20 00:00:00 EST 2006}
}
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