High-temperature operation of self-assembled GaInNAs/GaAsN quantum-dot lasers grown by solid-source molecular-beam epitaxy

Journal Article · Mon Feb 20 00:00:00 EST 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2178231· OSTI ID:20778685

Liu, C Y; Yoon, S F; Sun, Z Z; Yew, K C ^[1]

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1. School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798 (Singapore)

Self-assembled GaInNAs/GaAsN single layer quantum-dot (QD) lasers grown using solid-source molecular-beam epitaxy have been fabricated and characterized. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. The lowest obtained threshold current density in this work is {approx}1.05 kA/cm{sup 2} from a GaInNAs QD laser (50x1700 {mu}m{sup 2}) at 10 deg. C. High-temperature operation up to 65 deg. C was also demonstrated from an unbonded GaInNAs QD laser (50x1060 {mu}m{sup 2}), with high characteristic temperature of 79.4 K in the temperature range of 10-60 deg. C.

• OSTI ID: 20778685
• Journal Information: Applied Physics Letters, Vol. 88, Issue 8; Other Information: DOI: 10.1063/1.2178231; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
GALLIUM NITRIDES
INDIUM ARSENIDES
INDIUM NITRIDES
LASERS
MOLECULAR BEAM EPITAXY
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
THRESHOLD CURRENT