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Title: Shape and spatial correlation control of InAs-InAlAs-InP (001) nanostructure superlattices

Abstract

The control of shape and spatial correlation of InAs-InAlAs-InP(001) nanostructure superlattices has been realized by changing the As overpressure during the molecular-beam epitaxy (MBE) growth of InAs layers. InAs quantum wires (QWRs) are obtained under higher As overpressure (1x10{sup -5} Torr), while elongated InAs quantum dots (QDs) are formed under lower As overpressure (5x10{sup -6} or 2.5x10{sup -6} Torr). Correspondingly, spatial correlation changes from vertical anti-correlation in QWR superlattices to vertical correlation in QD superlattices, which is well explained by the different alloy phase separation in InAlAs spacer layers triggered by the InAs nanostrcutures. It was observed that the alloy phase separation in QD superlattices could extend a long distance along the growth direction, indicating the vertical correlation of QD superlattices can be kept in a wide range of spacer layer thickness.

Authors:
; ; ; ; ; ;  [1]
  1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
20778683
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 6; Other Information: DOI: 10.1063/1.2172288; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALLOYS; ALUMINIUM ARSENIDES; CRYSTAL GROWTH; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LAYERS; MOLECULAR BEAM EPITAXY; QUANTUM DOTS; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SPACERS; SUPERLATTICES; THICKNESS

Citation Formats

Lei, W., Chen, Y.H., Jin, P., Ye, X.L., Wang, Y.L., Xu, B., and Wang, Z.G.. Shape and spatial correlation control of InAs-InAlAs-InP (001) nanostructure superlattices. United States: N. p., 2006. Web. doi:10.1063/1.2172288.
Lei, W., Chen, Y.H., Jin, P., Ye, X.L., Wang, Y.L., Xu, B., & Wang, Z.G.. Shape and spatial correlation control of InAs-InAlAs-InP (001) nanostructure superlattices. United States. doi:10.1063/1.2172288.
Lei, W., Chen, Y.H., Jin, P., Ye, X.L., Wang, Y.L., Xu, B., and Wang, Z.G.. Mon . "Shape and spatial correlation control of InAs-InAlAs-InP (001) nanostructure superlattices". United States. doi:10.1063/1.2172288.
@article{osti_20778683,
title = {Shape and spatial correlation control of InAs-InAlAs-InP (001) nanostructure superlattices},
author = {Lei, W. and Chen, Y.H. and Jin, P. and Ye, X.L. and Wang, Y.L. and Xu, B. and Wang, Z.G.},
abstractNote = {The control of shape and spatial correlation of InAs-InAlAs-InP(001) nanostructure superlattices has been realized by changing the As overpressure during the molecular-beam epitaxy (MBE) growth of InAs layers. InAs quantum wires (QWRs) are obtained under higher As overpressure (1x10{sup -5} Torr), while elongated InAs quantum dots (QDs) are formed under lower As overpressure (5x10{sup -6} or 2.5x10{sup -6} Torr). Correspondingly, spatial correlation changes from vertical anti-correlation in QWR superlattices to vertical correlation in QD superlattices, which is well explained by the different alloy phase separation in InAlAs spacer layers triggered by the InAs nanostrcutures. It was observed that the alloy phase separation in QD superlattices could extend a long distance along the growth direction, indicating the vertical correlation of QD superlattices can be kept in a wide range of spacer layer thickness.},
doi = {10.1063/1.2172288},
journal = {Applied Physics Letters},
number = 6,
volume = 88,
place = {United States},
year = {Mon Feb 06 00:00:00 EST 2006},
month = {Mon Feb 06 00:00:00 EST 2006}
}
  • Highly uniform InAs quantum wires (QWRs) have been obtained on the In{sub 0.5}Al{sub 0.5}As buffer layer grown on the InP substrate 8{sup (convolutionsign)} off (001) towards (111) by molecular-beam epitaxy. The quasi-periodic composition modulation was spontaneously formed in the In{sub 0.5}Al{sub 0.5}As buffer layer on this misoriented InP (001). The width and period of the In-rich bands are about 10 and 40 nm, respectively. The periodic In-rich bands play a major role in the sequent InAs QWRs growth and the InAs QWRs are well positioned atop In-rich bands. The photoluminescence (PL) measurements showed a significant reduction in full width atmore » half maximum and enhanced PL efficiency for InAs QWRs on misoriented InP(001) as compared to that on normal InP(001)« less
  • Spontaneous lateral composition modulation as a consequence of the deposition of a (AlAs){sub n}/(InAs){sub m} short period superlattice on an InP(001) substrate is examined. Transmission electron microscopy images show distinct composition modulation appearing as vertical regions of In- and Al-rich materials alternating in the [{bar 1}10] projection. The periodicity of the modulation is 130 {Angstrom}, and is asymmetric. The transmission electron and x-ray diffraction patterns from the structure exhibit distinct satellite spots which correspond to the lateral periodicity. Transmission electron microscopy images show that the individual superlattice layers possess cusplike undulations, which directly correlate with the composition modulation. Composition modulationmore » in this sample appears to be coupled to morphological and compositional instabilities at the surface due to strain. {copyright} {ital 1997 American Institute of Physics.}« less
  • Spontaneous lateral composition modulation as a consequence of the deposition of a (A1As)n/(InAs)m short period superlattice on an InP(001) substrate is examined. Transmission electron microscopy images show distinct composition modulation appearing as vertical regions of In- and Al-rich materials alternating in the [110] projection. Ther periodicity of the modulation is 130.ANG., and is asymmetric. The transmission electron and x-ray diffraction patterns from the structure exhibit distinct satellite spots which correspond ot the lateral periodicity. Transmission electron microscopy images show that the individual superlattice layers possess cusplike undulations, which directly correlate with the composition modulation. Composition modulation in this sample appearsmore » to be coupled to morphological and compositional instabilities at the surface due to strain.« less
  • No abstract prepared.
  • A complex study of the influence of nanoscale InAs inserts with thicknesses from 1.7 to 3.0 nm introduced into In{sub 0.53}Ga{sub 0.47}As quantum wells (QWs) on the structural and electrical properties of In{sub 0.52}Al{sub 0.48}As/In{sup 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As heterostructures with one-sided δ-Si-doping has been performed. The structural quality of a combined QW was investigated by transmission electron microscopy. A correlation between the electron mobility in QW with the thickness of InAs insert and the technology of its fabrication is established. Specific features of the InP(substrate)/InAlAs(buffer) interface are investigated by transmission electron microscopy and photoluminescence spectroscopy. A relationship between themore » energy positions of the peak in the photoluminescence spectra in the range of photon energies 1.24 eV < ħω < 1.38 eV, which is due to the electronic transitions at the InP/InAlAs interface, and the structural features revealed in the interface region is established. It is found that an additional QW is unintentionally formed at the InP/InAlAs interface; the parameters of this QW depend on the heterostructure growth technology.« less