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Title: Shape and spatial correlation control of InAs-InAlAs-InP (001) nanostructure superlattices

Abstract

The control of shape and spatial correlation of InAs-InAlAs-InP(001) nanostructure superlattices has been realized by changing the As overpressure during the molecular-beam epitaxy (MBE) growth of InAs layers. InAs quantum wires (QWRs) are obtained under higher As overpressure (1x10{sup -5} Torr), while elongated InAs quantum dots (QDs) are formed under lower As overpressure (5x10{sup -6} or 2.5x10{sup -6} Torr). Correspondingly, spatial correlation changes from vertical anti-correlation in QWR superlattices to vertical correlation in QD superlattices, which is well explained by the different alloy phase separation in InAlAs spacer layers triggered by the InAs nanostrcutures. It was observed that the alloy phase separation in QD superlattices could extend a long distance along the growth direction, indicating the vertical correlation of QD superlattices can be kept in a wide range of spacer layer thickness.

Authors:
; ; ; ; ; ;  [1]
  1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
20778683
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 6; Other Information: DOI: 10.1063/1.2172288; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALLOYS; ALUMINIUM ARSENIDES; CRYSTAL GROWTH; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LAYERS; MOLECULAR BEAM EPITAXY; QUANTUM DOTS; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SPACERS; SUPERLATTICES; THICKNESS

Citation Formats

Lei, W., Chen, Y.H., Jin, P., Ye, X.L., Wang, Y.L., Xu, B., and Wang, Z.G. Shape and spatial correlation control of InAs-InAlAs-InP (001) nanostructure superlattices. United States: N. p., 2006. Web. doi:10.1063/1.2172288.
Lei, W., Chen, Y.H., Jin, P., Ye, X.L., Wang, Y.L., Xu, B., & Wang, Z.G. Shape and spatial correlation control of InAs-InAlAs-InP (001) nanostructure superlattices. United States. doi:10.1063/1.2172288.
Lei, W., Chen, Y.H., Jin, P., Ye, X.L., Wang, Y.L., Xu, B., and Wang, Z.G. Mon . "Shape and spatial correlation control of InAs-InAlAs-InP (001) nanostructure superlattices". United States. doi:10.1063/1.2172288.
@article{osti_20778683,
title = {Shape and spatial correlation control of InAs-InAlAs-InP (001) nanostructure superlattices},
author = {Lei, W. and Chen, Y.H. and Jin, P. and Ye, X.L. and Wang, Y.L. and Xu, B. and Wang, Z.G.},
abstractNote = {The control of shape and spatial correlation of InAs-InAlAs-InP(001) nanostructure superlattices has been realized by changing the As overpressure during the molecular-beam epitaxy (MBE) growth of InAs layers. InAs quantum wires (QWRs) are obtained under higher As overpressure (1x10{sup -5} Torr), while elongated InAs quantum dots (QDs) are formed under lower As overpressure (5x10{sup -6} or 2.5x10{sup -6} Torr). Correspondingly, spatial correlation changes from vertical anti-correlation in QWR superlattices to vertical correlation in QD superlattices, which is well explained by the different alloy phase separation in InAlAs spacer layers triggered by the InAs nanostrcutures. It was observed that the alloy phase separation in QD superlattices could extend a long distance along the growth direction, indicating the vertical correlation of QD superlattices can be kept in a wide range of spacer layer thickness.},
doi = {10.1063/1.2172288},
journal = {Applied Physics Letters},
number = 6,
volume = 88,
place = {United States},
year = {Mon Feb 06 00:00:00 EST 2006},
month = {Mon Feb 06 00:00:00 EST 2006}
}