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Title: Dielectric properties of <001>-oriented Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} thin films on polycrystalline metal tapes using biaxially oriented MgO/{gamma}-Al{sub 2}O{sub 3} buffer layers

Abstract

We report the growth of <001>-oriented Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) thin films on polycrystalline Ni-alloy tapes by pulsed laser deposition using biaxially oriented, ion-beam-assisted deposited (IBAD) MgO and {gamma}-Al{sub 2}O{sub 3} buffer layers. Dielectric constant values of our BST films were up to {approx}85% of those in the epitaxial films prepared under similar conditions on single-crystal MgO substrates. No significant dispersion of the dielectric constant was observed for frequencies from 100 Hz to 1 MHz. These results demonstrate the versatility of using IBAD-textured MgO and {gamma}-Al{sub 2}O{sub 3} buffer layers to integrate highly oriented good-quality BST films with nonsingle-crystalline substrates.

Authors:
; ; ; ;  [1]
  1. Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
Publication Date:
OSTI Identifier:
20778681
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 6; Other Information: DOI: 10.1063/1.2173232; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; BARIUM COMPOUNDS; BUFFERS; DIELECTRIC MATERIALS; ENERGY BEAM DEPOSITION; EPITAXY; HZ RANGE; ION BEAMS; LASER RADIATION; LAYERS; MAGNESIUM OXIDES; MONOCRYSTALS; NICKEL ALLOYS; PERMITTIVITY; POLYCRYSTALS; PULSED IRRADIATION; STRONTIUM TITANATES; SUBSTRATES; THIN FILMS

Citation Formats

Choi, W., Kang, B.S., Jia, Q.X., Matias, V., and Findikoglu, A.T. Dielectric properties of <001>-oriented Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} thin films on polycrystalline metal tapes using biaxially oriented MgO/{gamma}-Al{sub 2}O{sub 3} buffer layers. United States: N. p., 2006. Web. doi:10.1063/1.2173232.
Choi, W., Kang, B.S., Jia, Q.X., Matias, V., & Findikoglu, A.T. Dielectric properties of <001>-oriented Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} thin films on polycrystalline metal tapes using biaxially oriented MgO/{gamma}-Al{sub 2}O{sub 3} buffer layers. United States. doi:10.1063/1.2173232.
Choi, W., Kang, B.S., Jia, Q.X., Matias, V., and Findikoglu, A.T. Mon . "Dielectric properties of <001>-oriented Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} thin films on polycrystalline metal tapes using biaxially oriented MgO/{gamma}-Al{sub 2}O{sub 3} buffer layers". United States. doi:10.1063/1.2173232.
@article{osti_20778681,
title = {Dielectric properties of <001>-oriented Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} thin films on polycrystalline metal tapes using biaxially oriented MgO/{gamma}-Al{sub 2}O{sub 3} buffer layers},
author = {Choi, W. and Kang, B.S. and Jia, Q.X. and Matias, V. and Findikoglu, A.T.},
abstractNote = {We report the growth of <001>-oriented Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) thin films on polycrystalline Ni-alloy tapes by pulsed laser deposition using biaxially oriented, ion-beam-assisted deposited (IBAD) MgO and {gamma}-Al{sub 2}O{sub 3} buffer layers. Dielectric constant values of our BST films were up to {approx}85% of those in the epitaxial films prepared under similar conditions on single-crystal MgO substrates. No significant dispersion of the dielectric constant was observed for frequencies from 100 Hz to 1 MHz. These results demonstrate the versatility of using IBAD-textured MgO and {gamma}-Al{sub 2}O{sub 3} buffer layers to integrate highly oriented good-quality BST films with nonsingle-crystalline substrates.},
doi = {10.1063/1.2173232},
journal = {Applied Physics Letters},
number = 6,
volume = 88,
place = {United States},
year = {Mon Feb 06 00:00:00 EST 2006},
month = {Mon Feb 06 00:00:00 EST 2006}
}