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Title: High-resolution actinic defect inspection for extreme ultraviolet lithography multilayer mask blanks by photoemission electron microscopy

Abstract

We report on the development and first experimental results of a 'at wavelength' full-field imaging technique for defect inspection of multilayer mask blanks for extreme ultraviolet (EUV) lithography. According to the International Semiconductor Roadmap by Sematech, less than 5x10{sup -3} defects per cm{sup 2} should be present on such multilayer mask blank to enable mass production of microelectronics using EUV lithography, thus fast high-resolution methods for mask defect inspection and localization are needed. Our approach uses a photoemission electron microscope in a normal incidence illumination mode at 13 nm to image the photoelectron emission induced by the EUV wave field on the multilayer mask blank surface. We show that by these means, buried defects in the multilayer stack can be probed down to a lateral size of 50 nm.

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ;  [1];  [2];  [2];  [2];  [2];  [2]
  1. Fakultaet fuer Physik, Universitaet Bielefeld, Postfach 10 01 31, 33501 Bielefeld (Germany)
  2. (Germany)
Publication Date:
OSTI Identifier:
20778668
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 5; Other Information: DOI: 10.1063/1.2168263; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRON MICROSCOPES; ELECTRON MICROSCOPY; EXTREME ULTRAVIOLET RADIATION; ILLUMINANCE; IMAGES; INSPECTION; MASS; MICROELECTRONICS; PHOTOEMISSION; RESOLUTION; SEMICONDUCTOR MATERIALS; WAVELENGTHS

Citation Formats

Neuhaeusler, U., Oelsner, A., Slieh, J., Brzeska, M., Wonisch, A., Westerwalbesloh, T., Brueckl, H., Schicketanz, M., Weber, N., Escher, M., Merkel, M., Schoenhense, G., Kleineberg, U., Heinzmann, U., Institut fuer Physik, Universitaet Mainz, Staudingerweg 7, 55128 Mainz, Fakultaet fuer Physik, Universitaet Bielefeld, Postfach 10 01 31, 33501 Bielefeld, Focus GmbH, Neukirchner Str. 2, 65510 Huenstetten-Kesselbach, Institut fuer Physik, Universitaet Mainz, Staudingerweg 7, 55128 Mainz, and Fakultaet fuer Physik, Universitaet Bielefeld, Postfach 10 01 31, 33501 Bielefeld. High-resolution actinic defect inspection for extreme ultraviolet lithography multilayer mask blanks by photoemission electron microscopy. United States: N. p., 2006. Web. doi:10.1063/1.2168263.
Neuhaeusler, U., Oelsner, A., Slieh, J., Brzeska, M., Wonisch, A., Westerwalbesloh, T., Brueckl, H., Schicketanz, M., Weber, N., Escher, M., Merkel, M., Schoenhense, G., Kleineberg, U., Heinzmann, U., Institut fuer Physik, Universitaet Mainz, Staudingerweg 7, 55128 Mainz, Fakultaet fuer Physik, Universitaet Bielefeld, Postfach 10 01 31, 33501 Bielefeld, Focus GmbH, Neukirchner Str. 2, 65510 Huenstetten-Kesselbach, Institut fuer Physik, Universitaet Mainz, Staudingerweg 7, 55128 Mainz, & Fakultaet fuer Physik, Universitaet Bielefeld, Postfach 10 01 31, 33501 Bielefeld. High-resolution actinic defect inspection for extreme ultraviolet lithography multilayer mask blanks by photoemission electron microscopy. United States. doi:10.1063/1.2168263.
Neuhaeusler, U., Oelsner, A., Slieh, J., Brzeska, M., Wonisch, A., Westerwalbesloh, T., Brueckl, H., Schicketanz, M., Weber, N., Escher, M., Merkel, M., Schoenhense, G., Kleineberg, U., Heinzmann, U., Institut fuer Physik, Universitaet Mainz, Staudingerweg 7, 55128 Mainz, Fakultaet fuer Physik, Universitaet Bielefeld, Postfach 10 01 31, 33501 Bielefeld, Focus GmbH, Neukirchner Str. 2, 65510 Huenstetten-Kesselbach, Institut fuer Physik, Universitaet Mainz, Staudingerweg 7, 55128 Mainz, and Fakultaet fuer Physik, Universitaet Bielefeld, Postfach 10 01 31, 33501 Bielefeld. Mon . "High-resolution actinic defect inspection for extreme ultraviolet lithography multilayer mask blanks by photoemission electron microscopy". United States. doi:10.1063/1.2168263.
@article{osti_20778668,
title = {High-resolution actinic defect inspection for extreme ultraviolet lithography multilayer mask blanks by photoemission electron microscopy},
author = {Neuhaeusler, U. and Oelsner, A. and Slieh, J. and Brzeska, M. and Wonisch, A. and Westerwalbesloh, T. and Brueckl, H. and Schicketanz, M. and Weber, N. and Escher, M. and Merkel, M. and Schoenhense, G. and Kleineberg, U. and Heinzmann, U. and Institut fuer Physik, Universitaet Mainz, Staudingerweg 7, 55128 Mainz and Fakultaet fuer Physik, Universitaet Bielefeld, Postfach 10 01 31, 33501 Bielefeld and Focus GmbH, Neukirchner Str. 2, 65510 Huenstetten-Kesselbach and Institut fuer Physik, Universitaet Mainz, Staudingerweg 7, 55128 Mainz and Fakultaet fuer Physik, Universitaet Bielefeld, Postfach 10 01 31, 33501 Bielefeld},
abstractNote = {We report on the development and first experimental results of a 'at wavelength' full-field imaging technique for defect inspection of multilayer mask blanks for extreme ultraviolet (EUV) lithography. According to the International Semiconductor Roadmap by Sematech, less than 5x10{sup -3} defects per cm{sup 2} should be present on such multilayer mask blank to enable mass production of microelectronics using EUV lithography, thus fast high-resolution methods for mask defect inspection and localization are needed. Our approach uses a photoemission electron microscope in a normal incidence illumination mode at 13 nm to image the photoelectron emission induced by the EUV wave field on the multilayer mask blank surface. We show that by these means, buried defects in the multilayer stack can be probed down to a lateral size of 50 nm.},
doi = {10.1063/1.2168263},
journal = {Applied Physics Letters},
number = 5,
volume = 88,
place = {United States},
year = {Mon Jan 30 00:00:00 EST 2006},
month = {Mon Jan 30 00:00:00 EST 2006}
}