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Title: Oxide-free InSb (100) surfaces by molecular hydrogen cleaning

Abstract

We report that annealing of an oxidized InSb (100) single-crystal sample at 250 deg. C under molecular hydrogen flow [molecular hydrogen cleaning (MHC)] results in complete desorption of the surface oxides. Following this process, the surface morphology is found to be very smooth at the nanometric scale without any droplet structure and a nearly 1:1 In:Sb stoichiometry. MHC was applied to remove the native oxide of an epi-ready InSb(100) substrate used for molecular beam epitaxy growth of InSb films. These results suggest that MHC of InSb can be used as a very effective cleaning process for epitaxial film growth.

Authors:
; ; ; ; ; ; ;  [1];  [2];  [2]
  1. Physics Department, Technion--Israel Institute of Technology, Haifa 32000 (Israel)
  2. (Israel)
Publication Date:
OSTI Identifier:
20778626
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 3; Other Information: DOI: 10.1063/1.2162702; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CRYSTAL GROWTH; DESORPTION; DROPLETS; ELECTRON DIFFRACTION; HYDROGEN; INDIUM ANTIMONIDES; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; MORPHOLOGY; OXIDES; SEMICONDUCTOR MATERIALS; STOICHIOMETRY; SUBSTRATES; SURFACE CLEANING; SURFACE PROPERTIES; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Tessler, R., Saguy, C., Klin, O., Greenberg, S., Weiss, E., Akhvlediani, R., Edrei, R., Hoffman, A., SCD-Semi-conductor Devices, Haifa 31201, and Chemistry Department, Technion-Israel Institute of Technology, Haifa 32000. Oxide-free InSb (100) surfaces by molecular hydrogen cleaning. United States: N. p., 2006. Web. doi:10.1063/1.2162702.
Tessler, R., Saguy, C., Klin, O., Greenberg, S., Weiss, E., Akhvlediani, R., Edrei, R., Hoffman, A., SCD-Semi-conductor Devices, Haifa 31201, & Chemistry Department, Technion-Israel Institute of Technology, Haifa 32000. Oxide-free InSb (100) surfaces by molecular hydrogen cleaning. United States. doi:10.1063/1.2162702.
Tessler, R., Saguy, C., Klin, O., Greenberg, S., Weiss, E., Akhvlediani, R., Edrei, R., Hoffman, A., SCD-Semi-conductor Devices, Haifa 31201, and Chemistry Department, Technion-Israel Institute of Technology, Haifa 32000. Mon . "Oxide-free InSb (100) surfaces by molecular hydrogen cleaning". United States. doi:10.1063/1.2162702.
@article{osti_20778626,
title = {Oxide-free InSb (100) surfaces by molecular hydrogen cleaning},
author = {Tessler, R. and Saguy, C. and Klin, O. and Greenberg, S. and Weiss, E. and Akhvlediani, R. and Edrei, R. and Hoffman, A. and SCD-Semi-conductor Devices, Haifa 31201 and Chemistry Department, Technion-Israel Institute of Technology, Haifa 32000},
abstractNote = {We report that annealing of an oxidized InSb (100) single-crystal sample at 250 deg. C under molecular hydrogen flow [molecular hydrogen cleaning (MHC)] results in complete desorption of the surface oxides. Following this process, the surface morphology is found to be very smooth at the nanometric scale without any droplet structure and a nearly 1:1 In:Sb stoichiometry. MHC was applied to remove the native oxide of an epi-ready InSb(100) substrate used for molecular beam epitaxy growth of InSb films. These results suggest that MHC of InSb can be used as a very effective cleaning process for epitaxial film growth.},
doi = {10.1063/1.2162702},
journal = {Applied Physics Letters},
number = 3,
volume = 88,
place = {United States},
year = {Mon Jan 16 00:00:00 EST 2006},
month = {Mon Jan 16 00:00:00 EST 2006}
}