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Title: Oxide-free InSb (100) surfaces by molecular hydrogen cleaning

Abstract

We report that annealing of an oxidized InSb (100) single-crystal sample at 250 deg. C under molecular hydrogen flow [molecular hydrogen cleaning (MHC)] results in complete desorption of the surface oxides. Following this process, the surface morphology is found to be very smooth at the nanometric scale without any droplet structure and a nearly 1:1 In:Sb stoichiometry. MHC was applied to remove the native oxide of an epi-ready InSb(100) substrate used for molecular beam epitaxy growth of InSb films. These results suggest that MHC of InSb can be used as a very effective cleaning process for epitaxial film growth.

Authors:
; ; ; ; ; ; ;  [1];  [2];  [2]
  1. Physics Department, Technion--Israel Institute of Technology, Haifa 32000 (Israel)
  2. (Israel)
Publication Date:
OSTI Identifier:
20778626
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 3; Other Information: DOI: 10.1063/1.2162702; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CRYSTAL GROWTH; DESORPTION; DROPLETS; ELECTRON DIFFRACTION; HYDROGEN; INDIUM ANTIMONIDES; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; MORPHOLOGY; OXIDES; SEMICONDUCTOR MATERIALS; STOICHIOMETRY; SUBSTRATES; SURFACE CLEANING; SURFACE PROPERTIES; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Tessler, R., Saguy, C., Klin, O., Greenberg, S., Weiss, E., Akhvlediani, R., Edrei, R., Hoffman, A., SCD-Semi-conductor Devices, Haifa 31201, and Chemistry Department, Technion-Israel Institute of Technology, Haifa 32000. Oxide-free InSb (100) surfaces by molecular hydrogen cleaning. United States: N. p., 2006. Web. doi:10.1063/1.2162702.
Tessler, R., Saguy, C., Klin, O., Greenberg, S., Weiss, E., Akhvlediani, R., Edrei, R., Hoffman, A., SCD-Semi-conductor Devices, Haifa 31201, & Chemistry Department, Technion-Israel Institute of Technology, Haifa 32000. Oxide-free InSb (100) surfaces by molecular hydrogen cleaning. United States. doi:10.1063/1.2162702.
Tessler, R., Saguy, C., Klin, O., Greenberg, S., Weiss, E., Akhvlediani, R., Edrei, R., Hoffman, A., SCD-Semi-conductor Devices, Haifa 31201, and Chemistry Department, Technion-Israel Institute of Technology, Haifa 32000. Mon . "Oxide-free InSb (100) surfaces by molecular hydrogen cleaning". United States. doi:10.1063/1.2162702.
@article{osti_20778626,
title = {Oxide-free InSb (100) surfaces by molecular hydrogen cleaning},
author = {Tessler, R. and Saguy, C. and Klin, O. and Greenberg, S. and Weiss, E. and Akhvlediani, R. and Edrei, R. and Hoffman, A. and SCD-Semi-conductor Devices, Haifa 31201 and Chemistry Department, Technion-Israel Institute of Technology, Haifa 32000},
abstractNote = {We report that annealing of an oxidized InSb (100) single-crystal sample at 250 deg. C under molecular hydrogen flow [molecular hydrogen cleaning (MHC)] results in complete desorption of the surface oxides. Following this process, the surface morphology is found to be very smooth at the nanometric scale without any droplet structure and a nearly 1:1 In:Sb stoichiometry. MHC was applied to remove the native oxide of an epi-ready InSb(100) substrate used for molecular beam epitaxy growth of InSb films. These results suggest that MHC of InSb can be used as a very effective cleaning process for epitaxial film growth.},
doi = {10.1063/1.2162702},
journal = {Applied Physics Letters},
number = 3,
volume = 88,
place = {United States},
year = {Mon Jan 16 00:00:00 EST 2006},
month = {Mon Jan 16 00:00:00 EST 2006}
}
  • GaAs has been grown on pseudomorphic Si (100) surfaces and (100) surfaces misoriented 4{degree} toward (011) and (001) in order to study the quality of the GaAs on Si interface in the absence of misfit dislocations. We obtain completely two-dimensional single-domain GaAs epitaxy after only 80 A of deposition as observed by {ital in} {ital situ} high-energy electron diffraction. Transmission electron microscopy verifies that the GaAs grown on pseudomorphic Si is free of antiphase domains and other notable defects.
  • Oxide removal processes for InSb(100) and GaSb(100) substrates utilizing exposure to molecular hydrogen at moderate temperatures were studied in an experimental UHV chamber and were compared to the common method of thermal oxide desorption (TOD). Molecular hydrogen cleaning (MHC) deoxidizes the substrate surfaces effectively at temperatures of {approx}100 and {approx}200 deg. C lower than that in TOD of GaSb and InSb, respectively. Closely related hydrogen based procedures for the cleaning of these materials before molecular beam epitaxial growth were developed. In these procedures a very low flux of atomic hydrogen was used in order to achieve short, yet mild, deoxidationmore » of the substrates both with and without an Sb flux. These mild atomic hydrogen cleaning (MAHC) methods give smoother, cleaner, and more perfect InSb and GaSb surfaces after a shorter cleaning cycle at temperatures of 100-200 deg. C lower than that in TOD. An Sb flux is not necessary in MAHC, but if used it gives a smoother substrate surface, and a well ordered epilayer surface is achieved already after just a few epitaxially grown monolayers. This surface is of comparable quality to that prepared by a combination of TOD and relatively thick buffer layer growth. MHC and MAHC are more efficient for the case of InSb than for that of GaSb, since on GaSb a nonvolatile Ga{sub 2}O passivating layer is formed, whereas In{sub 2}O{sub 3} is reduced effectively to volatile species already at temperatures as low as 250 deg. C. For InSb the whole MAHC process can be carried out either during the heating stage of the substrate to the growth temperature or in a preparation chamber at 250 deg. C without an Sb flux.« less
  • We have performed photoemission experiments, using a tunable soft x-ray synchrotron radiation source to study the chemical changes of oxidized GaAs and AlAs surfaces subject to exposure from hydrogen ions. Results indicate that the net effects for hydrogen ion irradiation are (i) the reduction of arsenic and (ii) the growth of the cation oxide components. The reduction of arsenic can result from the formation/desorption of arsine. The oxide overlayer after hydrogen ion treatments is dominated by cation oxides which are the more stable chemical species as described in the phase diagram. This oxide layer should then remain stable in atmosphere.more » These results can provide insight into the chemical reaction between hydrogen ions and oxidized AlGaAs surfaces. {copyright} {ital 1996 American Vacuum Society}« less
  • The reduction at 555 K of oxidized Pt/Fe(100) surfaces by H[sub 2] has been studied using ellipsometry and Auger electron spectroscopy in combination with Ar[sup +] ion bombardment. The surfaces considered here were first covered with Pt (0-1.1 monolayer) and then oxidized up to different oxygen uptakes. It is found that the initial rate at which the oxygen is removed by the hydrogen strongly decreases with oxide thickness and with initial Pt coverage. If the oxygen uptake exceeds 7 [times] 10[sup 15] atoms/cm[sup 2] the surfaces cannot be reduced. After deposition of about 0.5 monolayer Pt on top of suchmore » an oxide layer, exposure to H[sub 2] results in a reduction at the same rate as for thin oxide layers. It is concluded that the oxide can only be reduced if metallic atoms are available at the surface. 18 refs., 4 figs.« less
  • The samples of Si(100) and Ge(100) were subjected to exposure in atomic hydrogen obtained upon decomposition of H/sub 2/ molecules on an incandescent tungsten filament. The thermal desorption spectra for hydrogen were determined for a pure annealed Si(100) and Ge(100) surface. The action of high exposures to atomic hydrogen may lead to an appreciable change in the electronic properties of the surface for both samples. The effect of irradiation by argon ions E/sub Ar/ +=(0.2-4)keV, D = (10/sup 13/-10/sup 17/) ions/cm/sup 2/ on the adsorption properties of Si(100) and Ge(100) was studied. results are presented.